空穴化 的英文怎麼說

中文拼音 [kōngxuéhuà]
空穴化 英文
cavitation
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 穴 : 名詞1 （巖洞; 窟窿） cave; cavern; grotto 2 （動物的窩） den; hole 3 （墓穴） grave4 [中醫] （穴...
  1. Effects of xylem cavitation and embolism on plants

    木質部空穴和栓塞化對植物的影響
  2. The negative photoconductivity effect was found in the dimixing phthalocyanine composites. the experiment results indicated that the negative photoconductivity effects were closely related with the partial charge transfer from the center metals to phthalocyanine rings, and the separation efficiency of photocarriers was a key factor to the photoconductivity

    結果表明，共混復合后，其光電導性能表現出負效應，並發現酞菁中心金屬與其相連的氮原子之間的部分電荷轉移是引起復合體系光電導性能變化的根本原因，同時復合體系中的電子空穴對的分離效率是影響光電性能的一個重要因素。
  3. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法
  4. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
  5. For strained si pmosfets, the hole mobility is not only determined by the tensity of strain, but also related to the strain types, which are uniaxial compressive strain and biaxial tensile strain. when electric field is high enough, the hole mobility will be deteriorated in pmosfets under biaxial tensile strain, however, in the case of uniaxial compressive strain, the deterioration will never occur

    經模型分析發現，應變硅pmosfet空穴遷移率與應力作用方式有如下關系:當橫向電場較高（ > 5 105v / cm ）時，雙軸張應力作用下的應變硅pmosfet的空穴遷移率將發生退化，而單軸壓應力器件則不會受到影響。
  6. Secondly, the transient characteristics of fn tunneling and hot hole ( hh ) stress induced leakage current ( silc ) in ultra - thin gate oxide are investigated respectively in this dissertation

    其次，本文分別研究了fn隧穿應力和熱空穴（ hh ）應力導致的超薄柵氧化層漏電流瞬態特性。
  7. Xps showed that there were much chemical absorbing water on the ti _ ( 2 ) film surface which mainly existed in form of - oh, and the contents of - oh was increasing with the annealing temperature. hydrophilic property became better with the annealing temperature ; the essential relation between the changing of contact angle and light - induced - electrons and light - induced - cavities was studied in details. the photocatalysis of samples without heat treatment was very bad, but that of samples after heat treatment was much better

    Xps的分析表明：試樣的表面含有大量的化學吸附水，主要以羥基的形式存在，隨著熱處理溫度的升高，吸附羥基的含量在增加；親水性能測試表明：隨著氧氣分壓的變化，其親水性能變化不大，隨著熱處理溫度的增加，試樣的親水性能在變好，並從理論上解釋了親水性能光照前後變化和光生電子?空穴對之間的本質關系。
  8. The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping

    首先注入的熱電子在超薄柵氧化層中產生陷阱中心，然後空穴陷入陷阱導致超薄柵氧擊穿。
  9. Hot hole injection experiments reveal that the lifetime of ultra - thin gate oxide is not simply determined by the total number of injected hole

    熱空穴注入的實驗結果表明超薄柵氧化層的擊穿不僅由注入的空穴數量決定。
  10. This dissertation is the first report that points out the cooperation of hot electron and hole is essential for the tddb of ultra - thin gate oxides

    首次提出了超薄柵氧化層的經時擊穿是由熱電子和空穴共同作用導致的新觀點。
  11. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  12. It is indicated that the cavity modes blueshift with decreased radius, and on decreasing radii there is obvious anticross between the three polaritons resulted from interaction between cavity modes and its corresponding exciton modes

    結果表明隨著微腔半徑的減小腔模能量藍移，腔模與相應的重空穴激子模、輕空穴激子模藕合形成的腔極化激元的三支隨著微腔半徑的減小存在明顯的反交叉行為。
  13. Tio2 film is antibacterial through photocatalysis. the silver doped tio2 film baffle the separate of electron and cavity, change the energy gap ' s framework of tio2, and improve its activity performance of photocatalysis

    二氧化鈦薄膜是光催化抗菌，摻銀二浙江人學幀卜論義氧化鈦薄膜阻止光生電子一光生空穴的分離，改變了tioz的能帶結構，提高了它的光催化活性。
  14. Several controversial viewpoints in studying the cavitation of xylem vessels

    木質部導管空穴化研究中的幾個熱點問題
  15. The author ' s main contributions are outlined as following : first, the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method. the changes of threshold voltage have been discussed under different stress conditions

    主要研究結果如下：首先，利用襯底熱空穴（ shh ）注入技術分別控制注入到超薄柵氧化層中的熱電子和空穴的數量，定量研究了熱電子和空穴注入對超薄柵氧化層擊穿的影響，討論了不同應力條件下的閾值電壓變化。
  16. In addition, when the electron - cavity pairs migrates to the films surface, there is adequate water to react with these electron - cavity pairs in good time. this not only reduces the composition probability of the electron - cavity pairs but also produces a large number of highly active hydroxyls that enhances the photocatalytic ability

    紫外光照射下產生的電子-空穴對遷移到薄膜表面后，有足夠的水分子及時地與空穴發生反應，不但減少了電子-空穴的復合機率，而且產生大量的強活性羥基，使薄膜的光催化性增強。
  17. Not only analysis the results of experiment taken on the cavitation unit of transient flowing research set, this thesis also studies the cavitation characteristics by calculating two relative maths models. then, principles of pressure and speed in different durations : generation, development and disappearance, are gained

    在利用瞬變流實驗臺空穴特性研究段進行實驗分析的同時，本文還應用兩種數學模型對空穴現象進行了計算分析，得出了空穴在產生，發展和消失各階段的壓力，流量變化規律。
  18. The results show that hh silc is attributed to oxide hole detrapping and the annihilation of positive charge - assisted tunneling centers

    研究結果表明：熱空穴silc機制是由於氧化層空穴的退陷阱效應和正電荷輔助遂穿中心的湮滅。
  19. According to the current problems such as low quantum efficiency. limited available sun energy spectrum range, and inefficient recovery, resulted from the practical using of photocatalysis, using the narrowband semiconductor cds ( eg = 2. 5ev ) to compound with tio2 seems to be an effective solution. since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two, which makes the photo induced electron and holes separate more easily

    本文針對光催化技術應用中存在的tio _ 2光催化量子效率低，吸收利用太陽能光譜范圍有限，催化劑回收困難等問題，通過窄禁帶半導體cds （ e = 2 . 5ev ）的復合，對納米tio _ 2進行了改性研究，一方面，由於cds的窄禁帶寬度可以擴展薄膜的光譜吸收范圍，另一方面，由於能帶的交疊，提高了光生電子和空穴的分離效率，從而提高了薄膜的光催化降解效率。
  20. The zno particles are excited by ultraviolet ( uv ) exciting light ( 365 nm ), showing two photoluminescence ( pl ) peaks / bands, centered at 2. 90 ev ( blue ) and 2. 23 ~ 2. 41 ev ( yellow - green ), respectively. the intensity of the yellow - green band was reduced after the product had been annealed in n2 and o2 at 350 c for 1h. ultraviolet visible absorption spectrum shows that the zno absorbs ultraviolet light intensely

    對于復合h ps zno結構的發光機制，認為是納米h價帶中的電子在紫外光的激發下，躍遷到zno的導帶，從而處于激發態，由於多孔硅的導帶比氧化鋅的導帶低， zno導帶中處于激發態的電子很快躍竄到多孔硅的導帶，然後再與h價帶中的空穴發生復合，發出可見光。
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