空穴區 的英文怎麼說
中文拼音 [kōngxuéqū]
空穴區
英文
void area-
Avoid continued operation within the cavitation zone
避免在空穴區域內持續運行。The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved
導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。Operation of valves continually in the cavitation zone should be avoided
應該避免在空穴區域內持續運行閥門。The rear seat of the sedan folds flat and opens up the 11. 7 cubic - foot trunk, while the rear seat of the five - door further flips forward with the touch of one finger, yielding a relatively cavernous 42 cubic - foot cargo area
後排座椅挺直，其後並開通有一個11 . 7立方英尺的行李空間，但在五門揭背式的型號里，當在用一根手指把後排座椅完全折疊時的時候，可以創造出一個相對似巨穴的42立方英尺貨物區域。This is the lowest outlet pressure setting allowed without failing into the cavitation zone
這是不會落入空穴區的最低的出口壓力設置。If flow requirements fall outside the capacity of a single valve, an additional smaller valve installed in parallel may be required
如果流量要求超出單個閥門的空穴區外，則可能需要並聯安裝一個較小的附屬閥門。A single reducing valve can be applied if operating flow, requirements are within the capacity of one size valve, and pressure drop is outside the cavitation zone
如果一個閥門通徑可以滿足工作流量和要求，並且壓降處于空穴區外，則可以安裝單個減壓閥。Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation
研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。If the intersection point falls in the shaded area, cavitation can occur
如果交點落在陰影區域，則可能產生空穴。The research work of the thesis include mainly : ( 1 ) observe a phenomenon which the two fracture modes are simultaneously found near crack tip of a four - point - bend specimen when the ratio of m / q is close to 3. 0mm, criteria m / q, when the fracture mode of four - point - bend specimen transits from void - mode to shear - mode. intensely location plastic distortion is observed in the front of crack tip and the macro - fracture of the specimen with the same m / q belongs to shear - mode fracture
本文主要在以下幾個方面取得了一定的進展：通過四點彎試件的斷口和切片試驗，觀察到裂紋尖端同時存在兩種斷裂機制? ?在兩種斷裂模式相互轉化的臨界狀態附近，裂紋前方既有鈍化和延伸區中的空穴形核擴張，又有銳化角前劇烈的集中剪切變形。分享友人