空穴流 的英文怎麼說
中文拼音 [kōngxuéliú]
空穴流
英文
cavity flow-
Hh silc is found to have a more pronounced transient effect
熱空穴應力導致的漏電流具有更加顯著的瞬態特性。The characteristics of high pressure gyratory sprayed pumping discusses is presented, which is applicable in wide range of scope and ground layers, convenient for construction, long durability, wide source of materials. mechanism for subgrade strengthening : complex foundation of cement solid and earth between piles was formed by pulsant load of flowing pressure and spraying flow, water wallop, cavitation phenomenon, water wedge effect, extrusion force and air flow agitation etc so as to enhance foundation bearing force and reduce settlement and deformation
高壓旋噴注漿技術具有適用范圍、適用地層較廣，施工方便，耐久性好，材料廣闊等特點；其加固地基機理主要是通過流動壓、噴射流的脈動負荷、水塊的沖擊力、空穴現象、水楔效應、擠壓力、氣流攪動等效應形成水泥固結體與樁間土的復合地基，從而提高地基承載力，減少沉降變形。Under this condition, this thesis offers a study on cavitation characteristics caused by two main accidental conditions : power off and system fluid off
本文即是針對動力失靈和系統斷流兩種主要事故工況下，所引起的動力系統中空穴的特性作以研究。The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved
導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。No pockets or dead spaces, thus preventing accumulation or stagnation of process fluids or contaminants
沒有空穴或死角，因此避免了累積，所處理的流體的滯流，或污染。Closer throttling, creating higher pressure drops may cause cavitation or excessive velocities which could cause high noise levels, vibration and possible damage to the valve or adjacent piping
如果節流較小，將因此產生更高的壓降將可能導致空穴現象或超快流速，從而導致噪音太高，振動劇烈，可能損壞閥門或相鄰的管路。In parallel installations, the larger valve handles the requirements for maximum flow down to its low flow capacity
這種並聯安裝方式中，大閥門處理降到低流量空穴下的最大流量需求。Secondly, the transient characteristics of fn tunneling and hot hole ( hh ) stress induced leakage current ( silc ) in ultra - thin gate oxide are investigated respectively in this dissertation
其次，本文分別研究了fn隧穿應力和熱空穴（ hh ）應力導致的超薄柵氧化層漏電流瞬態特性。Since polymer light - emitting diodes ( pleds ) were invented, much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application. we investigated several factors influencing the brightness, efficiency and spectrum characteristics of pleds el, especially focused our attention on the processes of carrier injection, transport, recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds
本文以提高聚合物器件的效率和亮度為目標，提出了提高及b幾種方案，研究了材料性質，器件結構，它們的穩態及瞬態特性及發光機理，特別關注了以兼具電子空穴傳輸能力的分子及摻雜聚合物作成的單雙層摻雜聚合物發光器件中的載流子注入、遷移、復合及湮滅等。High surface hole concentration p - type gan using mg implantation
應用mg離子注入獲得高表面空穴載流子濃度p -型ganBased on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大The cavitation flow in a nozzle at steady spray of a diesel engine was simulated, and the formation mechanism and distribution of cavitation inside the nozzle were analyzed using mixed multiphase flow model coupled with cavitation model
摘要利用混合多相流體模型加空穴模型的方法，模擬了柴油機孔式噴油嘴穩定噴射時嘴內的空穴流動現象，分析了空穴在噴油嘴內形成機理及其分佈情況。Compared with green light - emitting device, blue oled has many problems such as brightness, efficiency, stability, and color saturation, in this study we investgaited the blue oleds systemically : 1 ) double heterosturcture oled was charaterized. due to the introducing of electron transport layer alq3 and hole - blocking layer balq3, the energy matching was more reasonable and the carrier injecting was more effective in the double - layer device. the maximum efficiency and luminance of this device attained to 1. 90 lm / w and 10, 000 cd / m2, respectively
其次，由於一直以來藍光oled器件的研究處于相對落後的狀態，其發光亮度、效率、穩定性和色純度都無法綠光器件相比，所以本論文在以下幾個方面對藍光器件的性能進行了系統的研究: 1 ）研究了雙異質型藍光oled器件，由於本研究引入了空穴阻擋層，使得載流子的復合和激子的擴散被限定在發光層內，器件的發光效率達到了1 . 90lm / w ，最大亮度達到了10000cd / m2 ，比傳統結構器件的效率和亮度提高了約一個數量級; 2 ）制備了結構為ito / npb / balq3 / alq3 / mg : ag的oled器件，研究發現，當改變各有機層厚度時，器件的電致發光光譜發生了從綠光到藍光的移動。Secondly, we demonstrated the possibility of improving electron and hole injection and balance to poly ( phenelene vinylene ) derivatives by replacing oxadiazole segments
利用空穴傳輸特性ppv鏈段上添加電子傳輸型基團的方法改善了兩種載流子注入和傳輸的平衡。Not only analysis the results of experiment taken on the cavitation unit of transient flowing research set, this thesis also studies the cavitation characteristics by calculating two relative maths models. then, principles of pressure and speed in different durations : generation, development and disappearance, are gained
在利用瞬變流實驗臺空穴特性研究段進行實驗分析的同時，本文還應用兩種數學模型對空穴現象進行了計算分析，得出了空穴在產生，發展和消失各階段的壓力，流量變化規律。If flow requirements fall outside the capacity of a single valve, an additional smaller valve installed in parallel may be required
如果流量要求超出單個閥門的空穴區外，則可能需要並聯安裝一個較小的附屬閥門。A single reducing valve can be applied if operating flow, requirements are within the capacity of one size valve, and pressure drop is outside the cavitation zone
如果一個閥門通徑可以滿足工作流量和要求，並且壓降處于空穴區外，則可以安裝單個減壓閥。Mg ions were implanted on mg - doped gan grown by metalorganic chemical vapor deposition. the p - type gan was achieved with high hole concentration 8. 2810
應用mg離子注入mocvd法生長摻雜mg的gan中，在經過800 ， 1h的退火后，獲得高空穴載流子濃度8 . 2810Conformed by van der pauw hall measurement after annealing at 800 for 1h. this is the first experimental report of mg implantation on mg - doped gan and achieving p - type gan with high surface hole concentration
的p -型gan 。首次報道了實驗上通過mg離子注入到mg生長摻雜的gan中並獲得高的表面空穴載流子濃度。Majority carrier - a carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an n - type area
多數載流子-一種載流子，在半導體材料中起支配作用的空穴或電子，例如在n型中是電子。分享友人