空穴的 的英文怎麼說

中文拼音 [kōngxuéde]
空穴的 英文
vugular
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 穴 : 名詞1 （巖洞; 窟窿） cave; cavern; grotto 2 （動物的窩） den; hole 3 （墓穴） grave4 [中醫] （穴...
  • 的 : 4次方是 The fourth power of 2 is direction
  1. The cost for the deposition of the waste depends also upon the volume of the storage cavities and the maximum allowable radioactive concentration of the waste.

    廢料處理費用還取決于貯存空穴的容積和允許的廢料最大放射性濃度。
  2. Cavitation and bifurcation in an incompressible sphere

    不可壓縮球體的空穴和分叉
  3. The density of holes in the base is less than the density of free electrons in the emitter and collector.

    基極中空穴的密度小於發射極和集電極中自由電子的密度。
  4. The interaction will lead to tendency of an equilibration of energy over both of transverse and langmuir plasmons with the same frequencies near ( subscript p ), which is agreement with our numerical analysis

    求出了強朗繆爾波的強度和密度空穴的尺度，結果與粒子模擬的預測結果及實驗所測數據大致相符。
  5. As the increasing of concentration, the host and guest interconverted, and the more the charge been transferred, the more the total energy decreased. finally, we deduce that the doping of rubrene in pvk just acting as traps in electroluminescent devices, and its trapping electrons arrested many cavities in pvk. and so, more pvk who did n ' t transport energy was concerned with trop and it makes less pvk was concerned with energy transfer in photoluminescent devices than in electroluminescent devices

    基於光致發光和電致發光中pvk與rubrene發光強度的不同，我們對低摻雜時的電致發光和光致發光進行了比較，並提出：在電致發光中， rubrene的摻入在pvk鏈間相當于陷阱，其陷阱電子對pvk空穴的吸引，使一部分在光致發光中不參與能量傳遞的pvk參與了這種陷阱作用，使得在電致發光中不參與能量傳遞的pvk可能比光致發光中少。
  6. Under this condition, this thesis offers a study on cavitation characteristics caused by two main accidental conditions : power off and system fluid off

    本文即是針對動力失靈和系統斷流兩種主要事故工況下，所引起的動力系統中空穴的特性作以研究。
  7. The used approximately dimensioning to approximate the mass extraction ratio guarantees stable cavities for the time of stoping and the storage of teh residual brine but consider not the behaviour of the safety layers and their mechanical integrity

    所使用的近似尺寸接近質量萃取率，從而確保了回採和儲存殘余鹵水時空穴的穩定性，但安全層及其設備的完整性未考慮在內。
  8. Tio2 film is antibacterial through photocatalysis. the silver doped tio2 film baffle the separate of electron and cavity, change the energy gap ' s framework of tio2, and improve its activity performance of photocatalysis

    二氧化鈦薄膜是光催化抗菌，摻銀二浙江人學幀卜論義氧化鈦薄膜阻止光生電子一光生空穴的分離，改變了tioz的能帶結構，提高了它的光催化活性。
  9. By analyzing their energy offset on the interfaces, we found that the introduction of ii - vi compounds replaces the original steep barrier with ladder - like barriers. the injection probability becomes the production of two injection probabilities through lower barriers and become larger than the original one. in chapter 5 we want to utilize the deeper, dynamical ( in addition of static ) properties of semiconductor to reinforce the luminescence of oel

    為使類陰極射線發光同有機電致發光集成，我們設計了非對稱結構al sioz mnppvn ， mn ppv中的發光是由於從sioz出來的電子和從ld注人的空穴的復合，而由於sioz中的電子的倍增過程，從sioz層出來的電子能量不是單一的，而有一個從低能到高能的分佈。
  10. The author ' s main contributions are outlined as following : first, the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method. the changes of threshold voltage have been discussed under different stress conditions

    主要研究結果如下：首先，利用襯底熱空穴（ shh ）注入技術分別控制注入到超薄柵氧化層中的熱電子和空穴的數量，定量研究了熱電子和空穴注入對超薄柵氧化層擊穿的影響，討論了不同應力條件下的閾值電壓變化。
  11. In addition, when the electron - cavity pairs migrates to the films surface, there is adequate water to react with these electron - cavity pairs in good time. this not only reduces the composition probability of the electron - cavity pairs but also produces a large number of highly active hydroxyls that enhances the photocatalytic ability

    紫外光照射下產生的電子-空穴對遷移到薄膜表面后，有足夠的水分子及時地與空穴發生反應，不但減少了電子-空穴的復合機率，而且產生大量的強活性羥基，使薄膜的光催化性增強。
  12. One is void - model fracture which is resulted from initial, dilatation and coalescence of voids in material. the fracture criterion of void - model fracture is vgc - criterion or ctodi - criterion, and its fracture angle is able to be determined by m - criterion

    韌窩型斷裂由材料內空穴的形核、擴張和匯合造成，斷裂判據可以採用「 v _ （ gc ）準則」或ctod ~ i準則，斷裂角可以採用m準則確定。
  13. Dopant - an element that contributes an electron or a hole to the conduction process, thus altering the conductivity

    攙雜劑-可以為傳導子電供提程過或空穴的元素，此元素可以改變傳圓晶。
  14. Recently, with the rising of industrial safety criterion, it is emergent to further the research on cavitation characteristics in power system

    近年來，隨著工業安全水準的提高，對于動力系統空穴的特性研究日益緊迫。
  15. The results show that hh silc is attributed to oxide hole detrapping and the annihilation of positive charge - assisted tunneling centers

    研究結果表明：熱空穴silc機制是由於氧化層空穴的退陷阱效應和正電荷輔助遂穿中心的湮滅。
  16. According to the current problems such as low quantum efficiency. limited available sun energy spectrum range, and inefficient recovery, resulted from the practical using of photocatalysis, using the narrowband semiconductor cds ( eg = 2. 5ev ) to compound with tio2 seems to be an effective solution. since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two, which makes the photo induced electron and holes separate more easily

    本文針對光催化技術應用中存在的tio _ 2光催化量子效率低，吸收利用太陽能光譜范圍有限，催化劑回收困難等問題，通過窄禁帶半導體cds （ e = 2 . 5ev ）的復合，對納米tio _ 2進行了改性研究，一方面，由於cds的窄禁帶寬度可以擴展薄膜的光譜吸收范圍，另一方面，由於能帶的交疊，提高了光生電子和空穴的分離效率，從而提高了薄膜的光催化降解效率。
  17. The initial activity of pt / tio2 was higher than that of tio2 because it restrained the recombination of electron and hole with supported pt, however the regenerated ability of the pt / tio2 was lower than that of tio2. after the regeneration, the activity could come back to some 60 % of the original activity and the reaction activity declined rapidly. the reason might be that after regeneration on the surface of pt / tio2 the incomplete oxidation of h2s to produce s was enhanced

    Pt tio _ 2催化劑的初活性比單一的tio _ 2催化劑的初活性高，這是因為擔載的貴金屬抑制了電子與空穴的復合，但其再生性能比tio _ 2差，再生后活性只能恢復到初活性的約60 ，且反應活性迅速降低，這可能由於在再生后的pt tio _ 2表面上， h _ 2s通過不完全氧化生成s ~ 0的反應增強所致。
  18. Moreover, the sio2 / tio2 composite thin film showed the lowest pl intensity due to a decrease in the recombination rate of photo - generated electrons and holes under uv light irradiation, which further confirmed the film with the highest photocatalytic activity at 700 c. when the calcination temperature was higher than 700 c, the decrease in photocatalytic activity was due to the formation of rutile and the sintering and growth of tio2 crystallites resulting in the decrease of surface area

    同時，此時sio _ 2 / tio _ 2復合薄膜的熒光光譜顯示最低的熒光強度，這表明此時薄膜中的光生電子和空穴的復合速率最低，因而更有利於物質的光催化降解。當熱處理溫度高於700時，武漢理工大學碩士學位論文薄膜的光催化活性下降，這是由於薄膜中晶相二氧化欽的燒結和成長導致樣品的表面積下降以及金紅石相的形成。
  19. Appling p - n graded heterojunction instead of abrupt one is studied deeply in theory, and the conclusion is that it will enhance the current injection ratio, decrease the built - in voltage, improve the quality of the crystal and it will not affect the confinement to the hole

    在理論上提出在hb - led器件的dh結構中使用p - n結的漸變異質結替代現行的p - n突變異質結。分析採用異質結漸變方式將增加hb - led的電流注入比，減小內建電勢，改善晶體質量，並且不影響p - n結對空穴的限制。
  20. Firstly, we calculate variationally the binding energy and correlation energy of excitons in finite deep gaas - al0. 33ga0. 67as quantum wells. in the calculation, we consider the effect of effective mass and dielectric constant mismatch in the two materials. the results we obtained are basically conformed to the ones obtained from the previous theory and experiment

    首先，我們計算了有限深gaas - al _ （ 0 . 33 ） ga _ （ 0 . 67 ） as量子阱中激子的束縛能，其中考慮到了阱和壘兩種材料中電子和空穴的有效質量以及介電常數的失配影響，我們計算得到的激子的束縛能及相關能與前人的理論結果和實驗結果基本上相符合。
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