穿孔通路 的英文怎麼說

中文拼音 [chuānkǒngtōnglù]
穿孔通路 英文
punch path
  • 穿 : Ⅰ動詞1 （破; 透） pierce through; penetrate 2 （通過孔、隙、空地等） pass through; cross; go thro...
  • 通 : 通量詞（用於動作）
  • 路 : 1 （道路） road; way; path 2 （路程） journey; distance 3 （途徑; 門路） way; means 4 （條理） se...
  • 穿孔 : 1 （鉆孔; 鑿孔; 打孔） bore a hole; punch a hole; punching; piercing; tresis; key punching 2 [醫...
  • 通路 : thoroughfare; highway; highroad; route; viae; lead; outlet; approach; passage; gangway; access; c...
  1. By comparing the dry plate pressures drop and distributions of velocities simulated on single valve with those of double valves, it was found that there was intense turbulence in the flow fields around fixed - valve, there were eddy areas between valve side orifices and tray wall, there were eddies above the valves too, these led to the complex behaviors of gas perforating valve, these had a great effect on the gas - liquid mass transfer process. at the same time, in order to prevent the disadvantageous effect of gas between one valve with another on the gas - liquid mass transfer, it was very effective to change the fields of gas perforating valve by folding the edges of valve

    通過對數值模擬得出的單閥和雙閥塔板的干板壓降及流場速度分佈分析對比后發現，固定閥周圍流場存在較強的湍動，閥側孔與塔板壁面區域以及閥體的上方空間存在明顯的渦流區，使氣體穿閥后的行為變得復雜，並對氣液傳質過程產生重大影響；模擬結果表明，為防止和削弱固定閥間的對沖造成的「死區」對傳質帶來的不利影響，通過折邊來改變氣體的氣路是非常有效的，模擬值與實驗值基本得到吻合。
  2. New york ( reuters health ) jan 03 - multidetector row helical ct allows an accurate diagnosis of appendiceal perforation by imaging a defect in the contrast - enhanced appendiceal wall, according to a report in the january 2008 issue of radiology

    紐約（路透通訊社健康版） 1月3日訊來自2008年1月出版的《放射學》的報道多排螺旋ct通過對比增強模擬闌尾壁的缺損，可以準確診斷闌尾穿孔。
  3. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
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