穿流效應 的英文怎麼說

中文拼音 [chuānliúxiàoyīng]
穿流效應 英文
draining effect
  • 穿 : Ⅰ動詞1 （破; 透） pierce through; penetrate 2 （通過孔、隙、空地等） pass through; cross; go thro...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 效 : Ⅰ名詞（效果; 功用） effect; efficiency; result Ⅱ動詞1 （仿效） imitate; follow the example of 2 ...
  • 應 : 應動詞1 （回答） answer; respond to; echo 2 （滿足要求） comply with; grant 3 （順應; 適應） suit...
  • 效應 : [物理學] effect; action; influence
  1. With the continued scaling - down of mosfet, the ultra - thin gate oxide causes some serious problems of devices. the ultra - thin sio2 dielectrics cause significant leakage current, consequently increases standby power of device. meanwhile, the reliability of gate dielectrics is also degraded

    當mosfet器件按比例縮小到70nm尺寸以下時，傳統的sio _ 2柵介質的厚度將需要在1 . 5nm以下，如此薄的sio _ 2層產生的柵泄漏電流會由於顯著的量子直接隧穿效應而變得不可接受，器件可靠性也成為一個嚴重的問題。
  2. Application of the turbulent flow type of high efficiency water cooler on steel rolling line

    湍流式高效穿水冷卻器在軋鋼生產線上的應用
  3. We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field. the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells. it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field. the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells. incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells. the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures

    對磁量子結構中電子在外加恆定電場下的輸運性質進行了研究.分別計算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構成的兩種磁量子結構的傳輸概率和電流密度.計算結果表明，在相當寬廣的非共振電子入射能區，外加電場下電子的傳輸概率比無電場時增加.對于電子隧穿相同磁壘磁阱構成的雙磁壘結構，共振減弱；對于電子隧穿不同磁壘磁阱構成的雙磁壘結構，無電場作用時的非完全共振在適當的偏置電壓下轉化為完全共振，這時的電子可實現理想的共振隧穿.研究同時表明，磁量子結構中存在著顯著的量子尺寸效應和負微分電導
  4. Current flows through the device by the process of quantum tunneling : a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator

    電子在元件中利用量子穿隧效應流動，少量的電子可穿過絕緣層的障礙到達另一邊。
  5. The beam - test of china pin diodes at the cern sps accelerator produced satisfactory results. in addition, we studied the pin punch - through effect, and obtained the pin punch - through data with 18cm long pb wo4 crystal at the electron beam energies higher than 20gev for the first time, and these data gave valuable information to alice / phos

    在cern的sps加速器上的束流測試，得到比較滿意的結果；並對穿透效應做了實驗研究，首次獲得100gev粒子和20gev以上電子束的18厘米長pbwo4晶體探測器pin硅光管穿透效應實驗數據，為alice phos提供了有價值的參考資料。
  6. Tddb and hce always take place simultaneously under device operation conditions. hot - carrier enhanced tddb effect of ultra - thin gate oxide is investigated by using substrate hot - carrier injection technique

    在通常的工作條件下，氧化層的經時擊穿和熱載流子效應總是同時存在的。
  7. This dissertation investigates the breakdown theory and reliability characterization methods of the time dependent dielectric breakdown ( tddb ) for the ultra - thin gate oxide, and the hot - carrier effect ( hce ) in deep sub - micron mosfet ' s

    本文對超薄柵氧化層經時擊穿（ tddb ）擊穿機理和可靠性表徵方法以及深亞微米mos器件熱載流子效應（ hce ）進行了系統研究。
  8. The strict solution of the eddy current distribution inside a conductor cylindrical boundary surface for quasi - state - state is obtained by derivation of maxwell ’ s equations ; meanwhile, the approximate solution of the eddy current and electromagnetic field in the condition of the low - frequency or the high - frequency are obtained. furthermore the penetration depth of the skin effect is achieved

    五、討論了似穩條件下導體圓柱面內的渦電流分佈的規律。我們採用圓柱界面條件下獲得的趨膚效應的穿透深度與採用平面條件下獲得的趨膚效應的穿透深度相一致，我們的研究可視為對傳統教材相關論述的有益補充。
  9. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  10. Based on the theory mode, the delay time between the beginning of optical illumination and the onset of lock - on switching was calculated, and the transiting speed of electrons, the traversing velocity of the current filament, was obtained as well. the calculated results matched well the experimental results. taking advantage of the ultra - fast response characteristics of the devices, si - gaas pcss ' s are successfully applied to the broadening test of nanosecond laser pulses

    應用單極電荷疇模型數值計算了lock - on效應的光、電時間延遲和載流子的渡西安理工大學碩士學位論文越速度（絲狀電流穿越開關間隙的速度） ，所得計算結果與實驗測試結果基本吻a利川半絕緣gaas光屯導開關的超快光l匕11向應燈性，成功地應川下納秒激光脈沖展寬試驗中，證明了開關可廠泛應川在超快光電響應和光電反饋網路中。
  11. This program is launched to solve a fundamental issue existed : the direct factor influencing the optical transmission - variation of refraction index of the media in flow - field, in other words, to use ground simulation equipment or facilities to investigate the ao effects when qualitatively visualizing and quantitatively measuring the interaction of high - temperature, turbulent or shock wave flow - field with optical beam propagating through them, so that technology support can be provided for the high - speed interceptor development

    本項目就是針對這一瓶頸技術存在的基礎性問題：流場介質折射率變化是影響光學傳輸最直接的因素，即針對光線穿過高溫和湍流、激波等復雜流場作定性顯示和定量測量問題而開展的氣動光學效應地面模擬測試研究工作，為高速攔截彈的發展提供技術基礎。
  12. To accommodate the development of medicine, medical education and the increase of the recruited students, a series of reform measures in our operative surgery teaching have been taken, including effective mobilization before class, strategies of enlarging the throughput, adding the puncture practices, emphasizing the scene administration, ensuring the teaching safety, renewing the teaching material, enhancing diathesis education, stressing the focal points and closing to clinic, through which satisfactory effects have been gained

    摘要為適應近年來醫學、教育的發展及招生規模的擴大，我校在手術學教學方面採取了一系列改革措施，內容包括做好課前動員、採取擴流策略、增加穿刺訓練、抓好現場管理、確保教學安全、更新教材內容、加強素質教育以及抓重點、近臨床、抓現場、促安全等，從實施情況看，取得了很好的效果。
  13. Abstract : the saturation behavior of stress current is studied. the three types of precursor sites for trap generation are also introduced by fitting method based on first order rate equation. a further investigation by statistics experiments shows that there are definite relationships among time constant of trap generation, the time - to - breakdown, and stress voltage. it also means that the time constant of trap generation can be used to predict oxide lifetime. this method is faster for tddb study compared with usual breakdown experiments

    文摘:基於一階速率方程，討論了恆定電壓應力下應力電流的飽和行為.通過對應力電流的擬合，發現存在三類缺陷產生的前身.更進一步的統計實驗顯示，在缺陷產生時間常數、擊穿時間以及應力電壓之間存在著明確的關系.這意味著缺陷產生時間常數能夠被用於有效預測氧化層的壽命.與常規的氧化層擊穿實驗相比，基於缺陷產生時間常數的預測更快、更有效
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