窄禁帶 的英文怎麼說

中文拼音 [zhǎijīndài]
窄禁帶 英文
low energy gap
  • 窄 : 形容詞1. （橫的距離小） narrow 2. （心胸不開朗; 氣量小） petty; narrow 3. （不寬裕） hard up; badly off; short of
  • 禁 : 禁動詞1. （禁受; 耐） bear; stand; endure 2. （忍住） contain [restrain] oneself
  1. Abstract : we have studied theoretically a beat effect in a four - level system due to fifth - order optical polarization, and considered the cases that the pump beams have either narrowband or broadband linewidth. we have found that the accuracy for the energy - level splitting measurement is determined by the homogeneous linewidths of the optical transitions. that is to say, this technique can achieve doppler - free precision in the measurement of the energy level splitting between two excited states which are dipolar forbidden from the ground state

    文摘:研究了四能級系統中基於五階極化的拍頻效應，考慮了抽運光束為窄帶線寬或寬帶線寬的情形.發現其對能級分裂的測量精度決定於光學躍遷的均勻增寬.也就是說，這種技術在測量與基態是偶極禁戒躍遷的兩激發態之間的能級分裂時，可得到消除多普勒增寬的精度
  2. Rectum prolapse ( prolapse of the anus ) anus of aching be confined to is local, companion has ulcer, nightly and quiet when more painful, although pathological changes develops and aggravate, can appear meaning is frequent, in urgent hind heavy, defecate incontinent, excrement and urine is fine narrow contain the symptom such as purulent blood secretion

    直腸脫垂（脫肛）疼痛限於肛門局部，伴有潰瘍，夜間安靜時更痛，雖病變發展而加劇，可出現便意頻繁、里急后重、大便失禁、糞便細窄並帶有膿血分泌物等癥狀。
  3. Bulk silicon, with indirect band gap of 1. 12 ev, does n ' t emit visible light at room temperature

    本體硅為間接禁帶半導體，且禁帶寬度比較窄（ 1 . 12ev ） ，在室溫下很難發可見光。
  4. The mechanism of the luminescence has been discussed. bulk silicon, with indirect band gap of 1. 12ev does n ' t emit light at room temperature

    本體硅為間接禁帶半導體，且禁帶寬度較窄，室溫下很難發光。
  5. According to the current problems such as low quantum efficiency. limited available sun energy spectrum range, and inefficient recovery, resulted from the practical using of photocatalysis, using the narrowband semiconductor cds ( eg = 2. 5ev ) to compound with tio2 seems to be an effective solution. since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two, which makes the photo induced electron and holes separate more easily

    本文針對光催化技術應用中存在的tio _ 2光催化量子效率低，吸收利用太陽能光譜范圍有限，催化劑回收困難等問題，通過窄禁帶半導體cds （ e = 2 . 5ev ）的復合，對納米tio _ 2進行了改性研究，一方面，由於cds的窄禁帶寬度可以擴展薄膜的光譜吸收范圍，另一方面，由於能帶的交疊，提高了光生電子和空穴的分離效率，從而提高了薄膜的光催化降解效率。
  6. These unusual densities of states were due to the discrete propagation modes peculiar to the photonic crystal composed of alternative left - handed and right - handed materials, and could be used to make very narrow filters totally different from any conventional types of filters

    這些禁帶中的態密度是由左右手材料構成的一維光子晶體所特有的，它們可用於製造完全不同於常規濾波器的、頻帶狹窄的新型濾波器。
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