窄禁帶半導體 的英文怎麼說
中文拼音 [zhǎijīndàibàndǎotǐ]
窄禁帶半導體
英文
narrow bandgap semiconductor- 窄 : 形容詞1. （橫的距離小） narrow 2. （心胸不開朗; 氣量小） petty; narrow 3. （不寬裕） hard up; badly off; short of
- 禁 : 禁動詞1. （禁受; 耐） bear; stand; endure 2. （忍住） contain [restrain] oneself
- 半 : Ⅰ數詞1 （二分之一） half 2 （在 中間的） in the middle; halfway 3 （比喻很少） very little; the l...
- 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
- 體 : 體構詞成分。
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Bulk silicon, with indirect band gap of 1. 12 ev, does n ' t emit visible light at room temperature
本體硅為間接禁帶半導體，且禁帶寬度比較窄（ 1 . 12ev ） ，在室溫下很難發可見光。The mechanism of the luminescence has been discussed. bulk silicon, with indirect band gap of 1. 12ev does n ' t emit light at room temperature
本體硅為間接禁帶半導體，且禁帶寬度較窄，室溫下很難發光。According to the current problems such as low quantum efficiency. limited available sun energy spectrum range, and inefficient recovery, resulted from the practical using of photocatalysis, using the narrowband semiconductor cds ( eg = 2. 5ev ) to compound with tio2 seems to be an effective solution. since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two, which makes the photo induced electron and holes separate more easily
本文針對光催化技術應用中存在的tio _ 2光催化量子效率低，吸收利用太陽能光譜范圍有限，催化劑回收困難等問題，通過窄禁帶半導體cds （ e = 2 . 5ev ）的復合，對納米tio _ 2進行了改性研究，一方面，由於cds的窄禁帶寬度可以擴展薄膜的光譜吸收范圍，另一方面，由於能帶的交疊，提高了光生電子和空穴的分離效率，從而提高了薄膜的光催化降解效率。
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