第一柵極 的英文怎麼說
中文拼音 [dìyīzhàjí]
第一柵極
英文
first grid-
Mechanical standardization of semiconductor devices - part 6 - 12 : general rules for the preparation of outline drawings of surface mounted semiconductor device packages - design guide for fine - pitch grid array - rectangular type
半導體裝置的機械標準化.第6 - 12部分:表面安裝半導體裝置外形圖繪制的一般規則.小節距柵極矩陣列的設計指南.矩形Mechanical standardization of semiconductor devices - part 6 - 12 : general rules for the preparation of outline drawings of surface mounted semiconductor device packages ; design guide for fine - pitch land grid array ; rectangular type
半導體器件的機械標準化.第6 - 12部分:表面安裝半導體器件封裝外形圖繪制的一般規則.小節距柵極矩陣列的設計指南Measurements of the electrical properties of transmitting tubes - measuring methods of grid no1 cut - off voltage
發射管電性能測試方法第一柵極截止電壓的測試方法Measurements of the electrical properties of transmitting tubes - measuring methods of grid no1 current cut - off voltage
發射管電性能測試方法第一柵極電流截止電壓的測試方法Finally the method of preparation of p - si tft and some useful dates were given. the dissertation includes seven chapters. the first chapter introduces the development of tft ; the second chapter introduces the principle of tft and its structure ; the third chapter provides the reason of superposition capacitance between s, d and gate ; the fourth chapter introduce the deposition and test method of sinx ; the fifth chapter introduces the fabrication of p - si ; the sixth chapter studies the fabrication techniques of p - si tft and some parameters ; the seventh chapter is a conclusion of the research
本文一共分為七章:第一章介紹了本論文的研究背景、研究意義、主要工作以及國內外的研究進展;第二章介紹了tft的結構和工作原理;第三章介紹了柵極與源、漏極之間疊加電容產生的原因和自對準工藝;第四章介紹了氮化硅的制備方法和測試方法;第五章介紹了多晶硅tft有源層的制備方法並對各種晶化機理做了介紹;第六章主要對利用自對準工藝制備tft的工藝進行研究，並對制備出來的樣品進行了測試;第七章對全文進行總結。分享友人