閂鎖電路的英文怎麼說

中文拼音 [shuānsuǒdiàn]
閂鎖電路英文
latch circuit

  • : Ⅰ名詞(門閂) bolt; latch Ⅱ動詞(用閂插上) fasten with a bolt or latch
  • : Ⅰ名詞1 (安在開合處使人不能隨便打開的器具) lock 2 (姓氏) a surname Ⅱ動詞1 (上鎖) lock up 2 ...
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : 1 (道路) road; way; path 2 (路程) journey; distance 3 (途徑; 門路) way; means 4 (條理) se...
  • 電路: [訊] circuit (ckt); electric circuit; electrocircuit電路板 circuit board; 電路保持 guard of a c...

※中文詞彙閂鎖電路在字典百科國語字典中的解釋。

  1. Two other effects are transient phenomenon called single event upset ( seu ) and single event latchup ( sel ). in this paper, some means to harden the devices against these phenomena are used. guard banding around nmos and pmos transistors greatly reduces the susceptibility of cmos circuits to lachup

    在本文設計中,採用雙環保護結構,大大的降低了cmos集成對單粒子效應的敏感性;對nmos管採用環型柵結構代替傳統的雙邊器件結構,消除了輻射感生邊緣寄生晶體管漏效應;採用附加晶體管的冗餘存結構,減輕了單粒子翻轉效應的影響。
  2. Two unique sets of self - work controling circuit are the unlocked circuits of both password keyset and electronic key

    獨特的兩套獨立工作的控制,即密碼鍵盤開子鑰匙開
  3. Abstract : the hidden perils and troubles of safety existing in the interlocking circuit between the tipper in the raw material area and the railway signal system in wisco have been analyzed one by one and causes to their occurrence found out and the technological theory and counter measures to solve those problems comprehensively expounded and better working performance and reliability on the improved interlocking circuit achieved

    文摘:針對武鋼原料區原翻車機與鐵信號聯存在的安全隱患和缺陷,一個一個地進行剖析,找出它們產生的根源,全面系統地論述了解決這些問題的專業技術理論及其具體的改進措施,使改進后的翻車機與鐵信號聯性能良好、工作可靠。
  4. Soi hvic ( silicon on insulator high voltage integrated circuit ) is the mainstream and trend of the power integrated circuit ( pic ) due to the improved no latch - up, reduced leakage current, perfect irradiation hardness, and improved insulation

    Soi ( silicononinsulator )高壓集成具有無、漏流小、抗輻射、隔離性能好等優點,已成為功率集成( powerintegratedcircuit )的重要發展方向。
  5. Recently, the n / n + and p / p + epitaxial structures have been applied in the study and production of microwave transistor and ultra - large - scale integrated circuits ( ulsi ), and the memorial maintain time of dynamic random access memory can be improved, latch - up effect and soft - error induced by a particles can be resolved through the combination of epitaxy and ig

    採用這種結構與ig工藝相結合,能夠大大地提高動態存儲器dram的記憶保持時間,是解決效應( latch - up )和粒子引起的軟失效( soft - error )的最佳途徑。
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