等氮平衡 的英文怎麼說

中文拼音 [děngdànpínghéng]
等氮平衡 英文
nitrogenous equilibrium
  • : Ⅰ量詞1 (等級) class; grade; rank 2 (種; 類) kind; sort; type Ⅱ形容詞(程度或數量上相同) equa...
  • : 名詞[化學] nitrogen (7號元素, 符號n)
  • : Ⅰ形容詞1 (沒有高低凹凸 不頃斜) flat; level; even; smooth 2 (高度相同; 不相上下) on the same l...
  • : Ⅰ名詞1 (秤桿) the graduated arm of a steelyard2 (稱重量的器具) weighing apparatus3 (姓氏) a...
  1. Effects of diverse environmental factors on the growth rate ( od4oo ) and nitrogenase activity ( ara ) of the strain w12 hi nitrogen - free culture were investigated in our experiments. the results implied that the strain w12 could easily adapt to different cultural conditions : it could use various carbon sources ( especially glucose, sucrose, malic acid, mannitol ), propagate quickly and fix nitrogen at a temperature range of 15 ? to 40 ? and at 25 - 35 ? for optimum, at a ph range of 4 to 8. 5, at a saline concentration range of 0. 01 % to 1. 5 % ; low nlv " concentration had little effect on its nitrogenase activity. ara could also be detected when it grow in the culture media with 5mmol / l ntv "

    W12菌株對環境因子的適應性研究:無培養條件下,測定溫度、碳源、酸堿度、滲透壓對w12生長及固能力的影響,結果表明,在15 - 40下均能生長並表達固酶活性,其最適生長及固的溫度為25 - 35 ;能利用葡萄糖、蔗糖、蘋果酸、甘露醇多種碳源生長並固,當培養基中同時存在蔗糖和蘋果酸時,細菌生長和固活性最強;在偏酸和偏堿的條件下( ph4 . 5 - 8 . 5 )均能保持較強的生長勢和較高的固酶活性,並能通過調節自身代謝並適應環境的酸、堿性變化,使培養液趨于中性:能耐受較高的滲透壓,培養液中卜、 5 naci濃度對其生長和固酶活性影響不大,當naci濃度升至2時,菌株的生長勢及固酶活性才有所下降:低濃度的鉸對其固酶活性影響不大,在0
  2. In the using of fertilizers, we must get rid of the method of over using nitrogenous fertilizer , which only emphasize on profit ; in the using of pesticides, we should get rid of the method of using the most effective pesticide regardless of its remains, at the same time we should speed up the construction of standardizing the planting and processing of vegetables

    在化肥使用上,不能一直沿襲那種只圖效益、重施肥見效快的做法,要科學配方,施肥,化肥和有機肥合理搭配;在農藥使用上,改變哪種農藥見效快就用哪種農藥,甚至把大田作物農藥使用到蔬菜上的做法;同時要加快蔬菜種植、加工標準化建設。
  3. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳化合物薄膜沉積,得到了含量為21at的cn薄膜;研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響,給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因;引入脈沖輝光放電離子體增強pld的氣相反應,給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑;應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ,得到了含n量為56at的晶態cn薄膜;探討了cn薄膜形貌、成分、晶體結構、價鍵狀態特性及其與氣體壓強和放電電流的關系,證明了- c _ 3n _ 4薄膜沉積為滿足動力學條件的各種反應過程的競爭結果;採用光學發射譜技術對cn薄膜生長過程進行了實時診斷,得到了實驗參量對離子體中活性粒子相對濃度和氣相反應過程的影響規律,給出了cn薄膜沉積的主要反應前驅物,揭示了cn薄膜特性和離子體內反應過程之間的聯系;採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性,揭示了si原子對薄膜生長過程的影響,給出了si基表面碳薄膜的生長模式;在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積,證明了通過控制材料表面動力學條件可以改變碳薄膜結構特性,並可顯著提高晶態碳材料的生長速率。
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