等離子濺射 的英文怎麼說

中文拼音 [děnglízijiànshè]
等離子濺射 英文
plasma spraying
  • 等 : Ⅰ量詞1 （等級） class; grade; rank 2 （種; 類） kind; sort; type Ⅱ形容詞（程度或數量上相同） equa...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 濺 : 動詞（液體受沖擊向四外射出） splash; spatter
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 離子 : [物理學] ion
  1. Product range includes diaphragm, piston, peristaltic, rotary vane, linear, and vibratory armature pumps for medical, analytical, environmental, and automotive uses

    -研發與製造旋片式真空泵往復式真空泵冷陰極濺射離子泵爪式無油真空泵等系列產品。
  2. The results of simulations are : i ) energies of the incident ions to the target are determined mainly by the voltage across the cathode sheath, with a majority of ions " energy vary around the sheath voltage ; ions nearly normally bombard the target ; ions mainly locate above the sputtering holes because of the influence of the magnetic field, and the incident ions mainly come from the region ; the ions undergo several collisions during transportation, but that do n ' t matter much

    主要模擬結果有： ? ）入射離子到達靶面時的能量主要受到了射頻輝光放電中陰極殼層西北工業大學碩士學位論文李陽平電壓的影響，大部分離子的入射能量在陰極殼層電壓值附近，離子濺射時接近於垂直入射;射頻輝光放電受到陰極磁場的影響，等離子體中的離子主要集中在靶面濺射坑的上方，且入射離子主要來自這個區域;入射離子在輸運過程中和背景氣體分子有少量的碰撞，但影響不太大。
  3. The influence of depositing condition on the depositing rate and the structure of the films were studied by the aid of tem and xrd. when the temperature ( ts < 450, ta < 800 ) is low, the structure of the samples is still amorphous. the majority content of the sample is sio 90 by the aid of xps

    利用雙離子束濺射沉積技術，通過共濺射方法制備了si - sio _ 2薄膜，研究了沉積時間、工作氣壓p _ （ ar ） 、基片溫度等對沉積速率的影響，用tem和xrd分析了樣品的結構。
  4. The theory of ion - beam etching and ion sources are reviewed. the classification of ion - beam etching are introduced. according to the mechanism that ion sputtering leads to faceting, trenching, reflection and redeposition, some relative solutions are put forward

    綜合敘述了離子束刻蝕技術和離子源的工作原理，簡單介紹了離子束刻蝕的分類，闡述了離子束刻蝕的物理濺射效應導致的刻面，開槽，再沉積等現象的產生機理及解決辦法，分析了kaufman離子源進行ribe的可行性及出現的問題。
  5. Dlc and a - sic : h films were prepared by the rf glow discharge and the reactive sputtering method respectively. there were two reasons that we chose y rays, ultraviolet ( uv ) photons, and neutrons as radiation sources. one is that y rays, uv photons and neutrons irradiation are serious at outer space and / or nucleus irradiation enviromentthe other is that the study on y rays irradiation on the films is a new and an important directioaotherwisejirnited reports have been made of the investigation on the uv photonsjieutrons irradiation influences on these films

    本文分別採用射頻（ 13 . 56mhz ）等離子體cvd及射頻反應濺射方法制得了dlc及a - sic ： h薄膜。文中主要選擇y射線、紫外光及中子作為輻照源有兩方面的原因：一方面，在外層空間， y射線及紫外光輻射十分嚴重，而在核輻射環境下y射線及中子輻射也不可忽視；另一方面， y射線輻照這兩種薄膜完全是一項開創性的工作，同時國內外對紫外光子、中子與這兩種薄膜作用的研究也很少。
  6. By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

    本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。
  7. This thesis detailedly discussed die preparation of zrn films with microware - ecr plasma enhanced magnetron sputtering deposition ( mw - ecrpemsd ) technology

    本文探討了制備zrn薄膜的微波- ecr等離子體增強非平衡磁控濺射沉積工藝。
  8. Application of multiple plasma arc discharge vacuum magnetron sputtering coating plant in ceramic surface decoration

    磁控等離子多弧真空濺射鍍膜機在陶瓷表面裝飾的應用
  9. Our experiments emphasized the correlation between micro structures and some properties of the coatings and tried to obtain the protective coatings with the comprehensively good properties, in which auger electron spectroscopy ( aes ), scanning electron microscope ( sem ), and x - ray diffraction ( xrd ) were employed to investigate the composition, microstructure and crystal phase of the coatings respectively, and the properties test was primarily considered with the wear resistance and corrosion resistance of the coatings

    本論文主要採用pvd技術中的磁控濺射鍍膜（ ms或rms ）及部分用等離子噴塗（ ps ）和熱氧化（ to ）表面處理技術研究了鈾的具有代表性的三種防腐保護鍍層，即單質al 、氧化物al _ 2o _ 3和合金al - zn鍍層。實驗力圖在制備技術、工藝參數及鍍層的微結構和性能之間找到一些內在的聯系，探索綜合性能較好的防腐蝕鍍層。
  10. Combined with special wettability properties, a - c films may have greater potential applications. in present thesis, a series of a - c films were prepared by magnetron sputtering technique on substrates as si ( 100 ) and glass, and the deposited processes were controlled to adjust the morphology of the surfaces of a - c films. to further obtain the desired wettability, surface chemistry compound of the lotus - like surfaces were plasma modified by optimized processes

    本文採用磁控濺射系統在普通玻璃和單晶硅上獲得了具有不同表面形貌特徵的非晶碳薄膜，此外利用等離子體表面處理系統，通過改進工藝方法，優化工藝條件，對非晶碳薄膜表面化學組成進行調控，獲得了潤濕性能從超親水到超疏水范圍變化的表面。
  11. With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

    隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。
  12. Plasma sputtering equipment

    等離子濺射設備
  13. Coating metal such as cu, ni, ti, mo, w or compound coating on diamond grain ( dg ) surface by coating ( chemical, electronic plating ) and vacuum plating method ( evaporating, sputtering, ionization ) was studied

    摘要採用濕法鍍（化學鍍、電鍍）或真空鍍（蒸發鍍、濺射鍍、離子鍍）方法，在金剛石表面鍍覆一層銅、鎳、鈦、鉬、鎢等金屬，或者它們的復合鍍層。
  14. The composition and structure of the films synthesized by mw - ecrpemsd technology were examined by electron probe, edx, afm, xrd, sem, moreover the corrosion resistance of films were detected by anodic polarization. furthermore, the wear resistance of films was tested by frictional wear. the relationship between properties of films and mw - ecrpemsd technology was summarized

    對微波- ecr等離子體增強非平衡磁控濺射沉積工藝制備的薄膜，採用電子探針、 edx 、 aex 、 xrd 、 sem進行成分及微觀結構分析；利用陽極極化測試了薄膜的耐蝕性能；通過摩擦磨損實驗測試了薄膜的耐磨性能；總結了薄膜的特性與制備工藝的關系。
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