等離體頻率 的英文怎麼說

中文拼音 [děnglítǐbīnlǜ]
等離體頻率 英文
plasma frequency
  • 等 : Ⅰ量詞1 （等級） class; grade; rank 2 （種; 類） kind; sort; type Ⅱ形容詞（程度或數量上相同） equa...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 體 : 體構詞成分。
  • 頻 : Ⅰ形容詞（次數多） frequent Ⅱ副詞（屢次） frequently; repeatedly Ⅲ名詞1 [物理學] （物體每秒鐘振動...
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 頻率 : frequency; rate
  1. Experimental results show that the bistable of tuned substrate self - bias was determined by discharge gas pressure, discharge power and tuning circuit parameters etc. the bistable exists is because of there is capacitive coupling in icp system and sheath capacitance is nonlinear

    實驗結果表明這種跳變回滯現象與等離子體的放電氣壓、射頻功率以及調諧外電路的參數等多種因素密切相聯系。而產生跳變回滯現象的原因是icp中存在容性耦合以及鞘層電容具有非線性特性。
  2. Eddy - current sensor conversion circuit consist amplification circuit, band - pass filter circuit, demodulation circuit, differentiation phase and data sampling circuit. these circuits are used to convert the test signal of eddy - current sensor to discrete signal tend to process. the microprocessor system that formed of dsp chip is used to data fitting of test system, data displaying and data communicating with personal computer, etc. the interference questions of hardware design and the measure of eliminating interference signal in the subject are introduced in the last of this chapter

    硬體電路的設計主要分三大部分來實現：激勵源電路部分，由分頻電路和頻率合成電路組成，產生頻率穩定的激勵信號以確保檢測任務的正常進行；傳感器變換電路部分，由放大電路、濾波電路、檢波電路、鑒相電路和數據採集電路組成，主要將電渦流傳感器檢測線圈檢測到的信號變換成只含有被測信息的離散信號，易於后續電路處理；由dsp晶元構成的微處理系統，主要完成檢測系統的數據擬合、顯示及與主機通信等功能。
  3. In this paper, the progress of isolated microspore culture was reviewed : the major factors affecting regeneration ; the methods of reduplication ; the major factors affecting the formation of embryo, for example, experimental material, culture medium, raise condition, a phase of microspore growth

    通過對影響大白菜游離小孢子胚胎發生的主要因素材料基因型、供體母株生長狀態、小孢子發育時期、培養方法、培養條件和影響植株再生頻率的因素以及小孢子植株的加倍方法等進行了綜述。
  4. The common path defocusing 4f shearing interferometer in the system was constructed, which is fit for the dense plasma measurement. the advantages of this system consist in its stability and easy adjustment as the common path system and respective adjustability of shearing amount and stripe spatial frequency as m - z interferometer as well

    設計了基於共光路結構的離焦4f剪切差分干涉儀，該干涉儀同時具有m - z型干涉儀的剪切量和條紋空間頻率分別可調的優點以及共光路結構的穩定性和易於調節的優點，使得在稠密等離子體的測量中，系統參數可以兼顧小的剪切量和大的條紋空間頻率。
  5. Due to great advantage of the excimer laser in photoelectron material, photoelectron technology research, so in this thesis, a xecl excimer laser is designed in order to solve some problem in semiconductor film, cmr film, quartz film and other kind of film application, optical etching field, interaction between laser and material, material plasma study. the parameters of the excimer laser is e also measured and analyzed

    因此本文以氣相沉積、外延生長、巨磁薄膜、金剛石及其它薄膜制備及后續的光刻，激光與物質的相互作用，等離子體研究為目的，研製獲得了激光脈寬18ns ，單脈沖能量150mj ，矩形光斑大小2cm 1cm ，束散角3mrad ，最高重復頻率5hz的xecl準分子激光器。
  6. The paper establishes mathematics model of electromagnetic heating system of eddy current field and temperature field, and gives corresponding discrete format with elements as eight nodes, hexahedron equal cell, through calculating eddy - current field to gain the internal heat source that the temperature field needed, to use discrete method to solve the problem of induction - heating part ' s temperature field by axial symmetrical electromagnetic, and then to analyze the characteristic of instantaneous temperature field

    本文建立了電磁加熱系統的渦流場和溫度場間接耦合的數學模型，分析了不同頻率下渦流和溫度的分佈情況，並以八節點六面體等參元為例給出了渦流場對應的離散格式，通過計算渦流場獲得溫度場所需要的內熱源強度，加熱部件的溫度場以軸對稱格式進行離散求解，並對瞬態溫度場有限單元法的求解特點進行了分析。
  7. The relation between collisional absorption of the em - wave and the plasma density, plasma collision frequency, and incident wave frequency is obtained

    給出了不均勻非磁化等離子體密度、等離子體碰撞頻率、電磁波頻率與碰撞吸收的關系。
  8. The saturation time in our simulation is consistent with the prediction of the theory. furthermore, we also studied the propagation of two pulses with inverse phase. in this case, the wakefield excited by the first pulse will be absorbed by the second pulse which shifts to higher frequency

    此外，我們還研究「位相相反」的兩個脈沖在稀薄等離子體中的傳播，第二個激光脈沖由於吸收了前一脈沖激發的靜電場，頻率向高頻方向漂移，得到頻移的大小與符合理論推測。
  9. The numerical results of the dispersion relation show some nonlinear effects : for a fixed geometry of a waveguid, beam parameters and plasma density, the increment of the modulation parameter may lead to a slight increment of the operating frequency, however, as the modulation parameter increases further, saturation may occur and the dispersion relations are hard to be separated, it is due to the overmodulation of the microwave power, this phenomenon itself belongs to the nonlinear effects

    對於一定的波導、電子注參量和等離子體密度值，等離子體調制系數的增加，使工作頻率略微升高。但是，隨著等離子體調制系數的進一步增加，色散曲線變得彼此之間不可分辨，可以認為是等離子體的過調制導致了柵的飽和。這一現象是非線性的，可見，等離子體柵和調制場中文摘要是非線性關系，等離子體柵是非線性j 。
  10. Because of the advantages of no range blind area, high range resolution, low signal power and simple structure, lfmcw ( linear frequency modulation continuous wave ) radar attracted more and more attention recently

    線性調頻連續波（ lfmcw ）雷達是一種通過對連續波進行頻率調制來獲得距離與速度信息的雷達體制系統。由於其具有無距離盲區、高距離解析度、低發射功率、結構簡單，便於集成化等優點，適合用於液位測量系統。
  11. Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

    本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。
  12. The wkb method is used to calculate the amount of reflection coefficient of a plane wave normally ( or obliquely ) incident on a conductive plane covered with inhomogeneous unmagnetized plasmas

    用wkb方法給出了垂直入射、斜入射情況下，非磁化不均勻等離子體密度覆蓋導體平板的等離子體對不同頻率電磁波的反射系數。
  13. This paper has discussed preparing diamond - like carbon films by means of micro - wave ecr plasma source ion implantation and plasma enhanced chemical vapour deposition. we use the raman spectrum, ft - ir, afm and so on to study the dlc film. the result indicates : different bias voltage, frequency and gas flow rate of psii will have impact on sp3 proportion of dlc films, we find high bias voltage, low frequency and moderate gas flow rate can prepare high sp3 proportion dlc films ; we simply illustrate the influence of bias voltage on sp3 proportion of dlc films in pecvd

    研究結果表明：在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓的增加、頻率的降低和適中的氣體流量可以制備出sp ~ 3鍵比例高的類金剛石膜；在等離子增強化學氣相沉積技術中，對偏壓對sp ~ 3鍵比例的影響也進行了簡單分析。
  14. We combined the cvd technique with the pecvd technique by adding a dc or rf electric field to the reacting region of cvd device, and improved the inputting method of reaction gases, then had executed a diamond film growth system. the advantages of our system are : ( 1 ) reaction power, which can enhance the density of the plasma in the reacting region, is supplied with the heat filament and the dc electric field, or with the heat filament and the rf electric field both of them can be controlled precisely and they are complementary to each other

    將熱絲cvd技術與pecvd技術相結合，在薄膜的成核和生長階段分別給反應區再施加一個直流和射頻電場，同時改進反應氣體的進氣方式，製成具有下列兩大特點的金剛石薄膜生長系統： （ 1 ）反應功率由熱絲和直流電場或熱絲和射頻電場共同提供，兩者互相補充，可精確控制，大大提高了反應區的等離子體密度； （ 2 ）能精確控制反應氣體的分佈、流量及流速。
  15. In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，系統地研究了生長條件以及襯底表面氧化層對薄膜質量的影響，確定了生長高質量氧化鋅薄膜的優化條件；為獲得p - zno材料，克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難，我們通過熱氧化zn3n2的方法制備了p - zno ，獲得了一系列研究結果： 1 、詳細研究了氣體流速比，襯底溫度和射頻功率實驗參數對氧化鋅薄膜特性的影響。
  16. When the plasma density increases, the operating frequency also increases slightly, the temporal growth rate increases as well

    另外，等離子體密度的增加，也帶來工作頻率的略微升高，同時增長率也發生變化。
  17. The oxidation of sulfite is an important process in flue gas desulfurization by ammonia method

    摘要使用氣體放電等離子體對較高濃度的亞硫酸鈉進行氧化，在不同電壓和頻率條件下進行了實驗。
  18. In fact, there are many elements which influence the special character, such as the intensity and frequency of the laser, the binding energy of atom, an additional field and so on

    實際上，有許多因素會影響到諧波譜線的具體性質。例如：所加激光脈沖的強度和頻率，原子的電離勢以及外加的磁場或電場等。
  19. Spherical silica ( sio2 ) particles were obtained by the process of heating irregularly shaped sio2 powders under radio frequency plasma ( rf plasma ) condition

    摘要採用射頻等離子體球化顆粒形狀不規則的二氧化硅粉體，研究了加料速率、顆粒大小等因素對球化率的影響。
  20. Ion plasma frequency

    離子等離子體頻率
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