粗晶質的 的英文怎麼說

中文拼音 [cūjīngzhíde]
粗晶質的 英文
macrocrystalline
  • 粗 : Ⅰ形容詞1 （長條東西直徑大的） wide （in diameter）; thick 2 （長條東西兩長邊的距離寬的） wide （i...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 的 : 4次方是 The fourth power of 2 is direction
  1. The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

    對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。
  2. The results show that under the same lapping conditions the si3 n4 ball has the lowest material removal rate and the best roundness and roughness, followed by zro2, al2o3, and sic ball

    結果表明：在相同的研磨條件下，具有長柱狀晶粒的氮化硅陶瓷球加工速率最低，但圓度和表面粗糙度最容易控制；氧化鋯和氧化鋁陶瓷球表面質量次之，碳化硅陶瓷球加工速率最高，圓度和表面粗糙度最難控制。
  3. The results are as follows : ( 1 ) bst thin film prepared by pulsed laser deposition is well crystallized. the average grain size is 100nm and the surface roughness is about 10nm. when the electric field intensity is 3v /, the tunability of the thin film is about 30 % and the loss tangent is about 20 % under room temperature

    研究結果如下： （ 1 ）採用脈沖激光沉積法制備的bst薄膜結晶良好，晶粒尺寸在100左右；表面粗糙度約為10 ；室溫下，當直流電場為3v /時介電系數變化率約為30 % ，介質損耗約為20 % 。
  4. In 6. 635, topics covered include : special relativity, electrodynamics of moving media, waves in dispersive media, microstrip integrated circuits, quantum optics, remote sensing, radiative transfer theory, scattering by rough surfaces, effective permittivities, random media, green ' s functions for planarly layered media, integral equations in electromagnetics, method of moments, time domain method of moments, em waves in periodic structures : photonic crystals and negative refraction

    本課程所覆蓋的論題包括：狹義相對論、運動媒質的電動力學、色散媒質中的波、微帶集成電路、量子光學、遙感、輻射傳輸理論、粗糙表面上的散射、有效介電系數、隨機媒質、平面層狀媒質的格林函數、電磁學中的積分方程、矩量法、時域矩量法、周期結構中的電磁波：光子晶體和負折射率。
  5. We figure the quality of the surface through three sides : surface roughness, the state of surface stress and surface component

    本文提出了從三個方面來表徵晶片的表面質量，即表面粗糙度，表面應力以及表面化學成分。
  6. Efficacy : abundant nutrient can prevent of lacking water from the skin, locked the water in the bottom of skin, it possess soften and tighten efficacy, soften the horns and tighten the pores, smooth the wrinkle, improve the coarseness and dryness skin, make your skin particularity and tender, present the glittering beauty

    功效：豐富的營養成分可防止肌膚內水份的蒸發，鎖住肌膚底層水份，且具有柔膚和細膚的功效，軟化角質的同時有效收縮粗大毛孔，撫平細紋，改善粗糙、乾燥肌膚，令肌膚細膩柔嫩，使其再顯晶瑩剔透的美感！
  7. The surface of ce02 - ti02 films were very smooth and difficulty to crystallization. the ceo2 - tio2 complex films were nanocrystalline microstructure or microcrystalline even if to heat the substrates or to anneal the films. the ceo2 and tio2 nanocrystalline were not easy congregate and bigger because of heterogeneity interface disturb and have many defect

    組成ceo _ 2 - tio _ 2混合薄膜顆粒粒徑在納米尺度范圍3 ? 50nm ，與純ceo _ 2 、 tio _ 2薄膜相比，具有更小的表面粗糙度和更難結晶，這是由於異質材料晶界的相互干擾，使同質顆粒之間難于聚集而結晶長大，薄膜處于納米晶或雛晶態，即使加熱基片或薄膜進行熱處理也無明顯變化。
  8. The cmp experiment was carried out systematically on litao3 wafer. the polished surface foughness and material removal rate in different polishing conditions were measured and the effects of polishing pad material and its condition, pressure, rotating speed of the polishing plate, the type and size of abrasive, and the properties of the polishing slurry on the surface routhness and material removal rate were analysed in details

    通過對鉭酸鋰晶片的化學機械拋光過程的實驗研究，通過測量鉭酸鋰晶片在不同拋光條件下的表面粗糙度和材料去除率，詳細分析了拋光墊材料和狀態、拋光壓力、拋光盤轉速、磨料種類及粒度、拋光液組成等幾個因素對拋光表面質量和材料去除率的影響規律。
  9. At the present time, the first choice driver of icf is the laser. the basic requirements to the kdp crystal optics of icf solid laser driver are : high accuracy face shape quality ( transmission wave front / 6 pv ), high laser damage threshold value ( 15j / cm2 ), good surface roughness ( 5nm )

    慣性約束聚變固體激光驅動器對kdp晶體光學零件的基本要求是:高精度的面形質量（透射波前/ 6pv ） 、高激光損傷閾值（ 15j / cm2 ） 、良好的表面粗糙度rms （ 5nm ） 。
  10. Abstract : recrystallized in multiple solvent consisting of ethanol, low - carbon alcohol and water, antioxidant1010 was refined, and the main factors of affecting crystalliza tion including solvent, water et. al. were studied in the laboratory, and individua l delta - form crystals of antioxidant1010 with good stability, fast drying speed, hi gh purity, heavy bulk density, good flowability, low volatility was obtained

    文摘:在乙醇、低級醇a和水三元混合溶劑中，通過對抗氧劑1010粗品的重結晶精製研究，制備得到了純度高、堆密度大、流動性好、揮發份低、質量穩定、乾燥速度快的型抗氧劑1010 。
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