結型晶體管 的英文怎麼說

中文拼音 [jiēxíngjīngtǐguǎn]
結型晶體管 英文
junction transistor
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. The concepts described above are embodied in the junction transistor.

    上述各種概念都反映在結型晶體管中。
  2. There are many adaptive changes in the two research subjects ( artemisia. songarica schrenk. and seriphidium. santolinum ( schrenk ) polijak. ) in morphology and anatomy, such as with the increase of the daily age, the root - shoots ratio increased ; the root became stronger ; the ratio of leaf volume and leaf area increased ; the volume of epidermic cell decreased ; the cut - icle and phellem layer on the surface of root thickened. stoma caved in leaf ; epidermal hair of leaf and stem well - developed, palisde tissue developed well, the cell gap decreased ; the spongy tissue disappeared ; leaf is kinds of isolateralthat is the typical xeromorphic structure ; crystal cell and fibric cell increased ; conducting tissue and mechanical tissue developed well ; bundle sheath appeared

    實驗研究的兩種菊科（ compositae ）植物（準噶爾沙蒿（ artemisiasongaricaschrenk ）和沙漠絹蒿（ seriphidiumsantolinum （ schrenk ） poljak . ） ） ，形態解剖方面的變化表現為：隨日齡增加，根長/株高比值日益增大；根系逐漸發達；體積與葉面積比逐漸增大；表皮細胞體積變小；角質層增厚；根外部出現加厚的木栓層；氣孔下陷；葉、莖部的表皮毛密布，柵欄組織日益發達；而細胞間隙日漸變小；海綿組織逐漸消失；葉面結構常為典型旱生結構? ?等葉面；晶細胞及纖維細胞數目增多；輸導組織、機械組織日漸發達；具有維管束鞘等等。
  3. Jfet junction type field effect transistor

    結型場效應晶體管
  4. Two other effects are transient phenomenon called single event upset ( seu ) and single event latchup ( sel ). in this paper, some means to harden the devices against these phenomena are used. guard banding around nmos and pmos transistors greatly reduces the susceptibility of cmos circuits to lachup

    在本文設計中，採用雙環保護結構，大大的降低了cmos集成電路對單粒子閂鎖效應的敏感性；對nmos管採用環型柵結構代替傳統的雙邊器件結構，消除了輻射感生邊緣寄生晶體管漏電效應；採用附加晶體管的冗餘鎖存結構，減輕了單粒子翻轉效應的影響。
  5. Bipolar junction transistor - bjt

    雙極結型晶體管
  6. Bipolar junction transistor

    雙極面結型晶體管
  7. Standard test method of measurement of common - emitter d - c current gain of junction transistors

    結型晶體管共射極直流增益測量的標準試驗方法
  8. Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress

    本文主要研究了典型尺寸的n型金屬誘導橫向結晶多晶硅薄膜晶體管在兩種常見的直流應力偏置下的退化現象:熱載流子退化和自加熱退化。
  9. The trained neural network model can be used to solve a variety of problems emerged in rf / microwave circuit design, such as in microwave circuit cad, the established model structure can be used to characterize the nonlinear behavior of microwave circuits

    如用於微波電路cad ，可用所建立的模型結構來描述這么一類微波電路的非線性行為特徵；如用於微波電路設計，則可進行如共面波導、晶體管、傳輸線、濾波器和放大器等的設計；如用於微波電路優化，則可用所建立的電路模型優化電路參數，進行阻抗匹配等。
  10. First, the paper researchs the spice simulation of single electron transistor based on curve approach and quasi - analytical model of single electron transisor, and simulate characteristic of single electon transistor with matlab tool. secondly, the paper combine spice simulation program with master equation of single electron transistor, put forward novel spice simulation method of single electron transistor based on master equation, by choose master state of single electron transistor and build master equation of single electron transistor, afterward gain nonlinear cortrolled source of spice model of single electron transistor by solve the master equation of single electron transistor and simulate v - i characteristic of single electon transistor by spice program, it ’ s result prove the method is availability precision comparing with master equation method

    然後在此基礎上提出了基於主方程法單電子晶體管spice模擬新方法，本論文結合當前電路模擬軟體spice程序和單電子晶體管主方程模擬演算法，通過選擇單電子島電子數的主要狀態，建立單電子晶體管主方程，然後求解主方程，求得單電子晶體管spice等效模型的受控源的非線性函數，然後利用集成電路輔助分析軟體spice的abm （模擬行為建模）建立單電子晶體管（ set ） spice等效模型，利用set的等效模型對單電子晶體管v - i特性進行模擬，實驗證明此方法與直接解主方程法相比具有一定的精度。
  11. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  12. Detail specification for electronic component. pn silicon unijunction transistors for type bt 37

    電子元器件詳細規范. bt37型pn硅單結晶體管
  13. Detail specification for electronic. component pn silicon unijunction transistors for type bt 32

    電子元器件詳細規范. bt32型pn硅單結晶體管
  14. Detail specification for electronic components. pn silicon unijunction transistors for type bt 33

    電子元器件詳細規范. bt33型pn硅單結晶體管
  15. 2. in the first, the successfully fabricated si - based sets on p - type simox substrate are based on the process in china. the technology process is also offered for the controlled fabrication of single sets

    利用這些納米結構的制備技術，在p型simox矽片上成功地製造了硅量子點單電子晶體管，形成了一套制備硅單電子晶體管的工藝方法。
  16. Detail specification for electronic component programmble unijunction transistors for type bt 40

    電子元器件詳細規范. bt 40型可調單結晶體管
  17. The paper gave detailed analysis of the structure working principle and characteristics of the bipolar junction mos transistor ( bjmosfet ), a novel semiconductor device. this new device has shared the advantages of bjt and mos

    詳細分析了一種新型半導體器件? ?雙極壓控場效應晶體管（ bjmosfet ）的結構特點、工作原理，這種器件擁有bjt和mos兩者的優點。
  18. In the present thesis, we have considered a 2d photonic crystal of square lattice formed by two materials of dielectric constants. we consider the structure to be formed by a large number of small rectangle or square pixels of uniform size

    本文提出不管哪種結構均可看成是由很多個同樣大小的小矩形或正方介質像素組成的，對這種二維像素型光子晶體結構，對傳統平面波展開法可經修正使之收斂速度大大提高。
  19. The new display combines two technologies : sony ' s organic thin film transistor, which is required to make flexible displays, and organic electroluminescent display

    這種新型顯示器結合了兩項技術：用來製作軟顯示器的索尼有機薄膜晶體管和有機電致發光顯示技術。
  20. The major composition of crystals is calcium oxalate, it crystallizes with very different crystallization kinetics, e. g. monodinic monolydrate ( com ), tetragonal dihydtate ( cod ) and triclinic trihydrate ( cot ). com is easy to form urinary stones because it has stronger affinity for renal tubule cell membranes than cod, cot

    其中，晶體的主要成分是草酸鈣，主要有三種類型：一水草酸鈣（ com ，單斜晶系） ，二水草酸鈣（ cod ，四方晶系） ，三水草酸鈣（ cot ，三斜晶系） ，其中com與腎小管表皮細胞黏附力最強，是草酸鈣型尿結石的主要成分。
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