結晶器管 的英文怎麼說

中文拼音 [jiējīngqìguǎn]
結晶器管 英文
mould tube
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 結晶 : 1 （析出晶體） crystallize2 （晶體） crystal 3 （成果） crystallization; fruit; product; quintess...
  1. Two other effects are transient phenomenon called single event upset ( seu ) and single event latchup ( sel ). in this paper, some means to harden the devices against these phenomena are used. guard banding around nmos and pmos transistors greatly reduces the susceptibility of cmos circuits to lachup

    在本文設計中，採用雙環保護結構，大大的降低了cmos集成電路對單粒子閂鎖效應的敏感性；對nmos管採用環型柵結構代替傳統的雙邊器件結構，消除了輻射感生邊緣寄生晶體管漏電效應；採用附加晶體管的冗餘鎖存結構，減輕了單粒子翻轉效應的影響。
  2. As ammonia built up in the water gas purification system reacts with a part of condensate on the inner wall of the heat exchanger tube passes, and the salt solution formed cools down and crystallizes in the tube passes, the resistance in the shift conversion section increases exceedingly

    摘要由於水煤氣凈化系統積累的氨與部分冷凝水在換熱器管程內壁反應形成的鹽溶液在管程內冷卻結晶，造成變換工序阻力異常增大。
  3. The trained neural network model can be used to solve a variety of problems emerged in rf / microwave circuit design, such as in microwave circuit cad, the established model structure can be used to characterize the nonlinear behavior of microwave circuits

    如用於微波電路cad ，可用所建立的模型結構來描述這么一類微波電路的非線性行為特徵；如用於微波電路設計，則可進行如共面波導、晶體管、傳輸線、濾波器和放大器等的設計；如用於微波電路優化，則可用所建立的電路模型優化電路參數，進行阻抗匹配等。
  4. Curved mould copper tubes for bow - type continuous billet casting machine

    弧形方坯連鑄機結晶器銅管
  5. Based on many other circuit formats, a new kind of logic - level circuit representation, called unified middle - level circuit format ( umcf ), is defined in this paper, in which some special operations on circuit related with power estimation and low power design. umcf can not only interchange circuits of different formats, but also convert circuits to hspice acceptable files, which can be used for transistor level power estimation

    本文結合多種不同的電路格式，自主定義了一種邏輯級電路的中間表示形式（稱為umcf ）和一系列極具特色的與低功耗技術相關的操作，它不但可以實現與其他多種電路格式之間的相互轉換，還可以將電路直接轉換成hspice可以接受的文件，進行晶體管級的電路功耗估計，這樣可以在公認的高精度的功耗模擬器上，對本文的結果進行有效的驗證。
  6. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  7. Combining the unstable heat conduction in crystal layer with heat transfer of undeveloped slug flow in a vertical tube, a time - progression model of crystal layer growth in the bubble column crystallizer pipe is proposed, the calculation results from the numerical method agree well with the experimental data. under certain operating conditions, the periodical arrival of gas plugs can cause crystallization and partial re - melting occur in the crystal - melt interface

    結合未充分發展彈狀流的傳遞特徵和晶層內不穩定導熱，提出了鼓泡塔結晶器管內晶層生長的時間級聯模型，與實驗值吻合良好.特定操作條件下，隨彈狀泡的到來和離去，結晶界面可發生結晶-部分重熔
  8. For designing the microwave power amplifier formed by the chip of sige hbt more accurately, an novel method to extract chip s - parameter from s - parameter of packaged device with package is proposed

    為了更精確設計由sige異質結晶體管（ hbt ）管芯構成的微波功率放大器，本論文提出了一種新穎的從管殼封裝器件的s參數中提取出管芯s參數方法。
  9. According to negative temperature coefficient of vbe and positive temperature coefficient of vt, a framework of band - gap voltage reference is investigated. the reference offer a source of pir, distributed three voltage, one as upper - threshold voltage of dual - threshold comparator, the other as lower - threshold voltage of comparator, the other as direct current voltage for second band - pass filter amplifier

    同時利用pnp晶體管發射結電壓的負溫度特性和發射結差值電壓的正溫度特性設計了一個帶隙基準電壓源。此帶隙基準電壓源本身作為熱釋電紅外傳感器的電源電壓，同時分壓提供雙限電壓比較器的上限電平和下限電平以及第二級帶通濾波放大器的直流電平。
  10. The electric power harmonic comprehensive control system with low cast and high security is applied in this article. it adopts that sourced compensation links with non - sourced compensation herewhich the former is realized by high frequency pwm control technology and the latter is carried out by crystal switch formed by non - flow and over - voltage. it can realize stepless modulation with imaginary power, mightiness compensation of harmonic and negative electricity, and circuitry consumption debasing are achieved

    提出採用有源補償與無源補償相結合的電力諧波綜合治理技術及裝置，無源部分採用無涌流和過電壓的晶閘管控制電容器技術實現，有源部分採用高頻pwm控制技術實現，成本低、可靠性高、可實現無功功率的無級調節、強力補償諧波電流和負序電流，降低線路損耗。
  11. Compared with the similar research results, the weighted control ic here has the following characteristics : ( 1 ) the circuit structure is simpler ; ( 2 ) the chip ' s fabrication is compatible with standard cmos process ; ( 3 ) n - mosfets with high w / l ratio and short channels are used for weighting and output to reduce the insertion loss ; ( 4 ) the weighting factor varies in a relatively wide range with the controlling signals ; ( 5 ) input and output impedance approach 50 in low frequency ( e. g. 50mhz ), while in higher frequency they slightly deviate from 50, hence the energy reflection lower than 0. 1 ; ( 6 ) it completes the functions of sampling, weighting, controlling and summing of high frequency analog signals

    它的加權控制電路與已報道的相關電路相比具有如下特點：電路結構簡單；製造工藝與普通cmos工藝兼容：短溝道，高寬長比的nmos晶體管具有低的通導電阻，將其作為加權、輸出器件可降低由電路引起的插入損耗；改變加權信號，可實現權值在較大范圍內的連續變化；輸入、輸出阻抗在低頻（如50mhz ）下接近50 ，而在高頻下略有偏離50 ，但反射系數均低於0 . 1 ；實現了對高頻信號的取樣、加權、控制、疊加功能的迭加。
  12. The company mainly produces high - tension and low - tension electric equipment, thyristors electrical machinery soft starter, automatic regulating silicon piles etc. it developed the technology with own patent adopting sun shape heat tube radiators with steam and water separated, and developed the integrated power module unit including thyristors and rectifiers with the technology. the products organization is novel, and it conducts heat rapidly and has solved the difficult problems of heat dissipation in generator excitation and exchange power

    公司主要生產高低壓成套電器低壓動態無功補償裝置晶閘管電機軟啟動自動調壓硅堆等產品。研製開發出了「日」字形汽水分離式熱管散熱，並利用該技術開發了晶閘管整流管一體化功率組件，結構新穎，傳熱迅速，為發電機勵磁交流調功等領域解決了器件散熱難題，產品的各項性能均處于國內外領先水平。
  13. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  14. Based on the photoelectron and microelectronics, communication and net technology has become the core of high - tech. as the main carriers of information technology, lasers and display devices play significant roles. compare to the inorganic semiconductors, the organic semiconductors have much advantages

    以多種工藝在硅基襯底和玻璃襯底上制備了不同結構的有機薄膜場效應晶體管（ otft ） ，論述了不同制備工藝的優缺點，以及器件結構對性能的影響。
  15. The fabrication of the nano - structures and the study of nanoelectronic devices ( single electron transistor - set, single electron memory, etc. ) are one of the most important projects of the nanoelectronics and nanotechnology, of a study field with most vitality, progressive future, and it may bring magnitude effect to new technology revolution and industry in future

    納米結構的制備和納米電子器件（單電子晶體管、單電子存儲器等單電子器件）的研究是納米電子技術中最重要的研究內容之一，是最具有生命力、最具有發展前途，對未來新技術革命和產業可能帶來革命性作用的研究領域之一。
  16. Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic

    以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。
  17. Detail specification for electronic component. pn silicon unijunction transistors for type bt 37

    電子元器件詳細規范. bt37型pn硅單結晶體管
  18. Detail specification for electronic. component pn silicon unijunction transistors for type bt 32

    電子元器件詳細規范. bt32型pn硅單結晶體管
  19. Detail specification for electronic components. pn silicon unijunction transistors for type bt 33

    電子元器件詳細規范. bt33型pn硅單結晶體管
  20. Detail specification for electronic component programmble unijunction transistors for type bt 40

    電子元器件詳細規范. bt 40型可調單結晶體管
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