結構弛豫 的英文怎麼說

中文拼音 [jiēgòuchíyù]
結構弛豫 英文
structural relaxation
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 構 : Ⅰ動詞1 （構造; 組合） construct; form; compose 2 （結成） fabricate; make up 3 （建造; 架屋） bui...
  • 弛 : 動詞1. [書面語] （松開; 鬆懈） relax; loosen; slacken 2. （解除; 免除） fall off; fall out of use
  • 豫 : Ⅰ形容詞[書面語]1 （歡喜; 快樂） pleased 2 （安適） comfort Ⅱ名詞1 （河南的別稱） another name for...
  • 結構 : 1 （各組成部分的搭配形式） structure; composition; construction; formation; constitution; fabric;...
  1. Atomistic simulation of the relaxed structure and energy of edge dislocation in metal ta

    中刃型位錯弛豫結構和能量的原子級模擬
  2. By using the multi - configuration dirac - fock ( mcdf ) method, the effects of relaxation and correlation on the transition energies and probabilities of electric - dipole allowed ( el ) resonance and intercombination transitions for 2p53s3 - 2p6 in neutral neon have been systematically studied firstly. and the results of the transition energies and probabilities ( lifetimes ) in length and velocity gauge have been presented. during the calculation, in order to consider the rearrangement effects of the bound - state density and some important correlations, the asfs of transition initial - and final - states were divided according to their angular - momentum and parity and calculated, and different number of csfs were included in the expansion of asfs

    本文利用多組態dirac - fork （ mcdf ）理論方法，通過對輻射躍遷初、末態電子波函數的獨立計算以及在原子態波函數的展開中考慮不同數量的組態波函數，系統地研究了弛豫和相關效應對中性ne原子2p ~ 53s ~ （ 1 . 3 ） p _ 1 ~ o - 2p ~ 6 ~ 1s _ 0電偶極共振和復合躍遷的能量以及躍遷幾率的影響，給出了長度和速度兩種不同規范下激發態的能量和輻射壽命；以中性ne原子的研究為基礎，進一步研究了類ne等電子系列離子（ z = 11 - 18 ）較低的激發組態2p ~ 53s和基組態2p ~ 6的能級結構以及各能級間的輻射躍遷特性。
  3. Here we take the strained si cap layer with relaxed sige layer grown epitaxially by uhvcvd to form nmosfet and relaxed si cap layer with strained sige layer to form pmosfet as comparison to bulk sample

    在論文中我們給出了兩種不同的材料結構來與體si材料進行比較，用應變的sicap層和弛豫的sige材料層構建nmos管，用弛豫的sicap層和應變的sige材料層構建pmos管。
  4. By means of the calorimetric experimental results and the temperature dependence of heat capacity differences, four kinds of temperature dependences of configurational entropy, dielectric relaxation index and cooperatively rearranging region are studied, on the basis of configurational entropy theory on cooperatively rearranging region in disordered amorphous materials by the methods of the relationship between configurational entropy and heat capacity difference, and the equation of relaxation time with activated energy barriers

    摘要基於無序非晶材料「關聯重排區域」的構型熵理論，運用構型熵與熱容量差的關系式、弛豫時間與活化勢壘的基本公式，及聚合物量熱學的實驗結果和熱容量差與溫度的基本關系，研究了4種情況下構型熵、介電弛豫指數和關聯重排區域大小的溫度變化關系。
  5. Solidified microstructure and phase structure of relaxor ferroelectrics pmn - pt

    弛豫型鐵電材料的凝固組織與相結構
  6. In this paper, pmnt, pznt single crystals in the vicinity of the morphotropic phase boundary were obtained by high - temperature solution technique. the growth, structure and phase stability of single crystals were studied. the results are shown as follows : 1

    本論文採用高溫熔液法技術，對用高溫熔液法生長弛豫鐵電單晶材料工藝進行了研究，成功地制備出準同型相界附近的pmnt 、 pznt單晶材料，分析了晶體形成、晶體結構及其相結構穩定性，並對生長機理作了初步探索，主要研究結論如下： 1
  7. Preparation of 0. 8pmn - 0. 2pt ceramics by molten salt synthesis and its dielectric properties

    弛豫鐵電陶瓷的顯微結構及性能
  8. This paper gives the general kinetics equation as well as the critical shear stress value ( or the critical press gradient value ) when the chain structure breaks down, and the method to get the structure relaxation time in the " structure capture particle " process

    給出了電流變響應過程的一般動力學控制方程以及鏈崩潰時臨界的剪切應力值（壓力梯度值） ，及俘獲粒子過程中有關結構弛豫時間的求法。
  9. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。
分享友人
分享到 Line

分享到臉書