線性集成電路 的英文怎麼說

中文拼音 [xiànxìngjíchéngdiànlù]
線性集成電路 英文
integrated circuit, linear
  • 線 : 名詞1 （用絲、棉、金屬等製成的細長的東西） thread; string; wire 2 [數學] （一個點任意移動所構成的...
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  • 集 : gatherassemblecollect
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 路 : 1 （道路） road; way; path 2 （路程） journey; distance 3 （途徑; 門路） way; means 4 （條理） se...
  • 線性 : [數學] [物理學] linear; linearity線性代數 linear algebra; 線性方程 linear equation; 線性規劃 line...
  • 集成 : integration集成晶體管 integrated transistor; 集成元件 integrated component
  • 電路 : [訊] circuit （ckt）; electric circuit; electrocircuit電路板 circuit board; 電路保持 guard of a c...
  1. Development of hybrid integrated circuit of high linearphase - locked frequency discriminator

    混合集成電路高線性鎖相鑒頻模塊的研製
  2. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  3. The variable injection flow rate of product is controlled by electronic ic circuit. so the purpose of using minimum effective does and safe does and constant administration can be reached. because the product has designed various parameters, it increases functional selectional selection and makes the flow rate is more linear and constant. it is not only suitable for acesodyne after operation but also sutable for clinic application such as childbirth without pain and chemotherapy and so on

    本產品電子集成電路控制可變注液流量，達到控制最小有效劑量、安全劑量、均勻給藥的臨床用藥目的，該產品設計了多種參數，增加了功能的選擇，使流量更加線性和平穩，不僅適合手術后止痛，更適合用於無痛分娩、化療等臨床運用。
  4. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  5. Thirdly, the paper researchs the application of single electron transistor and the synthesis theory of cicuit based on quantum dot cellular automata by synthesis example of quantum cellular neural network based on build schr ? dinger equation of coupling quantum dot. at last, the paper researchs digital integrated circuit design based on quantum dot cellular automata and design a 8 - bit quantum dot cellular adder by qcadsign based on a method of majority logic reducetion for quantum cellular automata, it prove this designer of 8 - bit quantum dot cellular adder is correctly

    Dinger ）方程為基礎的量子點細胞自動機電路綜合理論，本文以量子細胞神經網路為綜合實例，建立耦合量子點的薛定鄂（ schr ? dinger ）方程組，通過化簡得到類似細胞神經網路的非線性電路方程。最後研究了基於量子點細胞自動機數字集成電路設計，通過建立邏輯方程，簡化邏輯方程，並設計基於精簡qca擇多邏輯門8位加法器，並用qcadesign進行了模擬，實驗證明設計正確性。
  6. Another increasingly important ( actor is to be integrated with analog and digital circuits. for this reason, it is highly advantageous for the microwave components to be fabricated through a commercial cmos process. so we research the microwave transmission lines and apply it into phase shift

    微型硅基微波傳輸線是微波無源、有源器件及微波集成電路的重要構成基礎，本文首先對其工作原理、器件模擬、結構參數設計、制備及散射參數測試進行較深入全面的研究，並進一步將微波傳輸理論應用於mems移相器，對移相器的結構參數、相移特性及可靠性等進行了分析。
  7. Hybrid integrated circuits detail specification for type hda030 linear 12 bit digital to analog converter

    混合集成電路. hda030型線性12位數字模擬轉換器詳細規范
  8. Semiconductor devices ; integrated circuits 4 : interface integrated circuits ; section 2 : blank detail specification for linear analogue - to - digital converters

    半導體設備.集成電路.空白詳細規范.線性數字模擬轉換器
  9. Dac semiconductor devices integrated circuits part 4 : interface integrated circuits section 1 : blank detail specification for linear digital - to - analogue converters

    半導體器件集成電路第4部分:介面集成電路第一篇:線性數字模擬轉換器
  10. Specification for harmonized system of quality assessment for electronic components - semiconductor devices - integrated circuits - blank detail specification - linear digital - to - analogue converters

    電子元器件質量評估協調體系規范.半導體器件.集成電路.空白詳細規.線性數字模擬轉換器
  11. Specification for harmonized system of quality assessment for electronic components - semiconductor devices - integrated circuits - blank detail specification - linear analogue - to - digital converters

    電子元器件質量評估協調體系規范.半導體器件.集成電路.空白詳細規范.線性數字模擬轉換器
  12. As the technology advances into deep sub - micron era, crosstalk reduction is of paramount importance for signal integrity. simultaneous shield insertion and net ordering sino has been shown to be effective to reduce both capacitive and inductive couplings

    隨著集成電路工藝發展到深亞微米技術，互連線串擾問題變得相當重要，它與互連線時延問題成為了決定電路性能的主要因素。
  13. After introduction of the tranlinear loop principal, the bjt current controlled conveyor has been designed by using mixed tranlinear loop voltage follower. as for modern integrated circuit, the model of mos transistor, the active resistance and the current mirror integrated circuit formed by mos transistor are introduced. the cmos current controlled conveyor has been derived from mixed tranlinear loop cmos voltage follower based on weak inversion operation

    針對現代集成電路的工藝，本文對mos晶體管的工作原理進行了簡要的敘述，討論了有源電阻和電流鏡的實現方法，並利用mos晶體管的亞閾值特性組成混合跨導線性迴路完成對應的電壓跟隨器的設計，推導出了基於cmos技術的電流控制傳送器。
  14. And then some terminal techniques on pic, devices simulation theory, resurfs effect and medici software are presented. at last three kinds of high voltage power devices have been designed and simulated. based on the analysis of the breakdown voltage and electric field distribution of the high power devices, the key physics and structural parameters effects on the breakdown voltage are found

    本文首先介紹了國內外功率集成電路的發展狀況，然後介紹了高壓集成電路中的幾種終端技術、 resurf效應、器件模擬的基本理論和medici器件模擬軟體，最後對三種型號的高壓功率器件的擊穿特性進行了分析和計算機模擬，指出了影響器件電壓的關鍵的物理和結構參數，並對這三種型號的器件進行模擬，得出的電特性曲線和參數基本上與公司給出的一致。
  15. As umbirfpa is a new type of infrared detecting device, its work principle is complex and its performance is affected by many factors. in the initial stage of developing, the design experiment and theoretical understanding are little interiorly. furthermore, the problems such as sensitivity reduced, dynamic range shortened, nonuniformity increased come forth if umbirfpa is not designed properly

    Umbirfpa是一種新型的紅外探測器件，微測輻射熱計的工作原理復雜，其性能受到很多因素的影響，目前國內尚處于發展初期，缺少實際的設計經驗和理論認識，同時umbirfpa又是在集成電路工藝線上生產的，投資大、周期長，如果設計不當，不僅可能導致靈敏< wp = 13 >度降低、動態范圍縮小、噪聲增大、非均勻性增大等問題，更可能的是根本就不能用於成像，從而造成很大損失。
  16. First, the paper researchs the spice simulation of single electron transistor based on curve approach and quasi - analytical model of single electron transisor, and simulate characteristic of single electon transistor with matlab tool. secondly, the paper combine spice simulation program with master equation of single electron transistor, put forward novel spice simulation method of single electron transistor based on master equation, by choose master state of single electron transistor and build master equation of single electron transistor, afterward gain nonlinear cortrolled source of spice model of single electron transistor by solve the master equation of single electron transistor and simulate v - i characteristic of single electon transistor by spice program, it ’ s result prove the method is availability precision comparing with master equation method

    然後在此基礎上提出了基於主方程法單電子晶體管spice模擬新方法，本論文結合當前電路模擬軟體spice程序和單電子晶體管主方程模擬演算法，通過選擇單電子島電子數的主要狀態，建立單電子晶體管主方程，然後求解主方程，求得單電子晶體管spice等效模型的受控源的非線性函數，然後利用集成電路輔助分析軟體spice的abm （模擬行為建模）建立單電子晶體管（ set ） spice等效模型，利用set的等效模型對單電子晶體管v - i特性進行模擬，實驗證明此方法與直接解主方程法相比具有一定的精度。
  17. The developments of high - speed circuits and mmic pose the problem of analyzing the circuits characterized both in time and frequency domains. a variety of mixed time - frequency methods have been developed during the last quarter century in the research of the vlsi interconnect and package analysis and nonlinear steady - state analysis. this paper examines these methods from a unified point of view. various mixed problems are formulated as circuit equations in the mixed time - frequency domain. fundamental approaches to slove the equations are given, from which all of the published mixed methods can be naturally deduced. this facilitates the comprehension of these methods and is helpful for their applications. some new ideas are proposed based on the cross reference among these different kinds of methods

    隨著高速集成電路及mmic （微波單片集成電路）的發展，提出了對時-頻混合表示電路進行分析的任務.本文用統一的觀點考察了通常屬于高速電路互連與封裝分析、非線性電路穩態響應分析兩個不同方面的混合分析問題，指出這類問題的實質是要求解一個時-頻混合的電路方程，給出了求解這一方程的基本思路，闡明了現有的各種方法是如何從這一基本思路導出的.這可為認識這些方法的本質與聯系，促進它們的應用與發展提供參考.此文還探討了某些方法之間的相互借鑒，提出了若干新的想法
  18. 5. the detailed compare of the different topologies of receiver based on the in - depth analysis of each part of rfic. and their analysis and simulation results based on different wireless communication standards are also given

    在對射頻集成電路各部分詳細分析以及無線通道衰落特性估計的基礎上，對射頻接收晶元（ receiver ）的不同拓撲結構進行了對比和分析。
  19. Practice for measuring dose rate response of linear integrated circuits metric

    測量線性集成電路的劑量反應率的實施規范
  20. Furthermore, the hall plate and amplifier also formed a linear hall sensor with high sensitivity

    結果還表明，霍爾元件和放大電路可構成靈敏度很高的霍爾線性集成電路。
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