耗盡型耗盡型 的英文怎麼說

中文拼音 [hàojìnxínghàojìnxíng]
耗盡型耗盡型 英文
depletion mode
  • 耗 : Ⅰ動1 （減損; 消耗） consume; cost 2 [方言] （拖延） waste time; dawdle Ⅱ名詞1 （壞的音信或消息） ...
  • 盡 : 盡Ⅰ副詞1 （盡量） to the greatest extent 2 （用在表示方位的詞前面 跟「最」相同） at the furthest ...
  • 耗盡 : exhaust; use up; deplete; exhaustion; depletion; consumption; burning up; impoverishment
  1. Influences of the parameters on device performance such as thickness of strained si, ge content, channel doping and thickness of buried oxide are discussed based on given models. the models could be very helpful for device design

    根據所建立的模型，針對硅膜厚度、 ge組分、摻雜濃度和埋氧層厚度等參量對薄膜全耗盡型strained - soimosfet器件性能的影響進行詳細討論，為器件結構設計提供了理論基礎。
  2. Because a large file will use up all your memory

    ）中讀取整個文件時要小心，因為大型文件將耗盡所有內存。
  3. Abstract : a new approach, gate - capacitance - shift ( gcs ) approach, is described for compact modeling. this approach is piecewise for various physical effects and comprises the gate - bias - dependent nature of corrections in the nanoscale regime. additionally, an approximate - analytical solution to the quantum mechanical ( qm ) effects in polysilicon ( poly ) - gates is obtained based on the density gradient model. it is then combined with the gcs approach to develop a compact model for these effects. the model results tally well with numerical simulation. both the model results and simulation results indicate that the qm effects in poly - gates of nanoscale mosfets are non - negligible and have an opposite influence on the device characteristics as the poly - depletion ( pd ) effects do

    文摘:提出了一種新的建立集約模型的方法，即柵電容修正法.此方法考慮了新型效應對柵電壓的依賴關系，且可以對各種效應相對獨立地建模並分別嵌入模型中.另外，利用該方法和密度梯度模型建立了一個多晶區內量子效應的集約模型.該模型與數值模擬結果吻合.模型結果和模擬結果均表明，多晶區內的量子效應不可忽略，且它對器件特性的影響與多晶耗盡效應相反
  4. Channel depletion mode junction

    溝道耗盡型結
  5. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs146

    半導體分立器件. cs146型硅n溝道耗盡型場效應晶體管.詳細規范
  6. Semiconductor discrete device. detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs141型硅n溝道mos耗盡型場效應晶體管詳細規范
  7. Semiconductor discrete device. detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs140型硅n溝道mos耗盡型場效應晶體管.詳細規范
  8. Semiconductor discrete device. detail specification for type cs5114 cs5116 silicon p - channel deplition mode field - effect transistor

    半導體分立器件. cs5114 cs5116型硅p溝道耗盡型場效應晶體管詳細規范
  9. Semiconductor discrete device. detail specification for type cs4091 cs4093 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4091 cs4093型硅n溝道耗盡型場效應晶體管詳細規范
  10. Semiconductor discrete device. detail specification for types cs4856 cs4861 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4856 cs4861型硅n溝道耗盡型場效應晶體管詳細規范
  11. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs1 gp, gt and gct classes

    半導體分立器件gp gt和gct級cs1型硅n溝道耗盡型場效應晶體管.詳細規范
  12. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs4. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs4型硅n溝道耗盡型場效應晶體管.詳細規范
  13. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs10. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs10型硅n溝道耗盡型場效應晶體管.詳細規范
  14. The equipment must be compact in size and low in power consumption, and able to adapt to various power supply conditions

    設備體積必須小型化。電源消耗盡可能低，能適應多種供電條件。
  15. Put size safeguards on database queries to help guard against large queries using up system resources

    對數據庫查詢設置大小保護措施，以防止大型查詢耗盡系統資源。
  16. The combination of high gear ratio and long stroke can drain an entire air system unless the air supply system is specially designed to accommodate this type of actuator

    除非氣源供應系統是經過特殊配置，以滿足這種類型執行機構的要求，或者高齒輪傳速比和長沖程的組合可能會耗盡整個氣源系統。
  17. The optical effect on the uniformity of mesfet threshold voltage is studied. results show that optical radiation enhances the drain - source current of the gaas mesfet, and makes the threshold voltage to move toward negative direction. optical radiation enhances the uniformity of mesfet threshold voltage

    本文研究了光照對閾值電壓均勻性的影響，觀察到在光照條件下，耗盡型mesfet的溝道電流增加，閾值電壓向負方向增加，光照提高了閾值電壓的均勻性。
  18. Physics device model, component structure design and fabrication technology are discussed based on the thorough analysis of strained silicon and soi physics mechanism. the detail contents are as follows. the analytical threshold voltage model, drain current model and transconductance model are derived from poisson ’ s equation for the fully depleted strained soi mosfet

    本論文圍繞這一微電子領域發展的前沿課題，在深入分析應變硅和soi物理機理的基礎上，對器件的物理模型、器件結構設計和工藝實驗等問題作了研究，主要包括以下幾部分:首先，從器件的物理機制出發，建立主要針對薄膜全耗盡型器件的閾值電壓、輸出電流和跨導模型。
  19. In accordance with the mr damper - spring system presented in this paper and non - linear fem model of guyed mast, an " off - on energy dissipation " semi - control strategy based upon mr damper ' s displacement is proposed, in which the control force of mr damper is close to the instantaneous optimal active control force and dissipate energy as possible as it can

    根據本文提出的mr阻尼器?彈簧系統和桅桿結構非線性計算模型，文中提出了使mr阻尼器所提供的控制力盡量接近瞬時最優主動控制力，同時又能盡量耗能的mr阻尼器對桅桿結構風振響應半主動控制基於阻尼器位移的「開關?耗能」半主動控制策略，並在時域內進行了模擬分析。
  20. In the high frequency c - v experiments, the large flat - band shift in sio2 / p - sic indicated that there was high density of deep interface states. the deep interface states were simply studied by using photo excitation

    在無光照條件下，比較了n型和p型sicmos的不同特點，對其深耗盡特徵和p型sicmos的平帶電壓作了討論和解釋。
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