能帶隙 的英文怎麼說

中文拼音 [néngdàixì]
能帶隙 英文
band gap
  • 能 : 能名詞（姓氏） a surname
  • 隙 : 名詞1 （縫隙; 裂縫） crack; chink; crevice 2 （空閑） gap; interval 3 （漏洞; 機會） loophole; op...
  1. The dual - core air - guided pbgfs couplers are designed and decoupling phenomenon has been found. coupling properties of the pbgfs with adjacent two air cores are evaluated. the decoupling point, where no power transfers between two cores,

    對具有兩個相鄰纖芯的空氣傳導光子帶隙光纖的傳導模式和耦合特性進行了理論分析，在所分析的結構中發現了無耦合點，在該點兩個相鄰纖芯之間不發生能量交換。
  2. Spontaneous emission can be totally suppressed or strongly enhanced depending on the relative position of the resonant frequency from the edge of the photonic band gap and the photonic mode density. several novel phenomena can be obtained. the spontaneous emission displays an oscillatory behavior, classical light localization, photon - atom bound state, nonzero steady - state population and anomalously large vacuum rabi splitting. and localized mode associated with a defect site in an otherwise perfect photonic crystals, acts as a high - q micro - cavity

    通過原子上能級與光子頻率帶隙邊緣的相對位置或者光子態密度，可以抑制或增強原子的自發輻射。分析並得到了一些奇異的現象，如自發輻射的諧振子行為、光的局域、單光子?原子局域態、上能級中存在非零穩態原子布居數、類似於真空中的拉比頻率分裂等。
  3. When sulphurisation time is 30 minutes and sulphurisation temperature change from 180 to 240, the atomic ratio s / sn of the films increases from 0. 72 to 1. 08 and energy gap of the films increases from 1. 44ev to 1. 48ev with the increasing of the sulphurisation temperature

    當硫化時間為30分鐘硫化溫度在240 ~ 310之間變化時，薄膜的s / sn值隨著硫化溫度的升高從1 . 08上升到1 . 96 ，能帶間隙隨著硫化溫度的升高從1 . 01ev上升到1 . 72ev 。
  4. By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits, type of current density ratio compensation 、 weak inversion type and type of poly gate work function, a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper. applying the negative feedback technology, an output buffer and multiply by - 2 - circuits are designed, which improve the current driving capability

    然後通過比較和分析電流密度比補償型、弱反型工作型和多晶硅柵功函數差型三種帶隙電壓基準源電路結構的優缺點，確定了電流密度比補償型共源共柵結構作為本設計核心電路結構，運用負反饋技術設計了基準輸出緩沖電路、輸出電壓倍乘電路，改善了核心電路的帶負載能力和電流驅動能力。
  5. Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev

    Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  6. Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev

    = zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  7. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  8. Such control can be realized in case where a atom interact with photonic band gap matericals when the atom is placed in photonic crystals whose density of modes is dramatically different from that of free space vacuum. it was known that control could be achieved by varying the frequency ( which leads to the changes of the relative position of the upper levels from the forbidden gap ) or by varying the photonic density of modes ( dos ) or by varying the intial atomic state

    由於光子晶體具有不同於真空中的光子態密度，原子和光子帶隙材料便發生相互作用，這樣便可以控制原子的自發輻射。改變原子上能級與光子禁帶邊緣的相對位置、材料中的光子態密度或原子初態都可以控制原子的自發輻射。
  9. Lastly, we discuss the energy - band structure of ultracold atoms in optical lattice by means of green function method and in addition, procure the superfluid - mott phase transition condition in mean - field approximation which is in agreement with the result in the literature

    最後利用格林函數方法討論了光格子中超冷原子的能帶結構，根據mott相存在能隙的判據我們在平均場近似下重新得到superfluid - mott相變條件，該結論與相關文獻一致。
  10. Some results are interesting, for example, in our calculation, there are no reconstruction in the cleaned pbte > pbse > pbs ( 001 ) surface. but there are different rumple occurs. unlike the iii - v and ii - vi semiconductors, there are no surface states in the fundamental gaps

    在表面電子結構特徵方面，與111一v族和n一vl族化合物不同，基本帶隙中不引入表面態，而在導帶頂和價帶底附近以及更深能級中出現表面態或表面共振態等。
  11. Zno is a directed band semiconductor with a big binding energy. it has gained substantial interest because its large exiton binding energy ( 60mev ), which could lead to lasing action based exiton recombination even above room temperature, such as led, ld and so on

    Zno是一種寬禁帶的直接帶隙半導體材料，具有非常高的激子束縛能（ 60mv ） ，即使在室溫條件下激子也不會分解，因此可以被用作光發射器件，如led和ld等。
  12. This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters

    Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。
  13. Measurement procedures for resolution and efficiency of wide - bandgap semiconductor detectors of ionizing radiation

    離子輻射的寬能帶隙半導體探測器的分辨和功效的測量規程
  14. After considering the curvature effects, we find that armchair tubes are yet metallic with no band gaps. as for metallic zigzag tubes and metallic chiral tubes, a curvature - induced band gap and two accessional von hove singularities can be found. the width of the band gap depends on its tube - diameter and chirality

    我們發現，在考慮捲曲效應以後，扶手型管不產生帶隙，仍為金屬性管；而對于鋸齒型金屬性管和螺旋型金屬性管，因捲曲誘導在費米能附近產生一個窄的帶隙以及兩個附加的范?霍夫奇點峰。
  15. Zinc oxide is a ii - iv wide band - gap ( 3. 37ev ) compound semiconductor with wurtzite crystal structure

    氧化鋅（ zno ）是一種具有六方結構的的寬禁帶-族半導體材料，室溫下能帶帶隙eg為3 . 37ev 。
  16. Gan has d1rect, wide bandgap und is one of the ii1ost promising lnateria1. 1t ' s good e1ectrica1, opt ica1 characteristi cs and excel1ent lllecllaniczl1 properties make it one of the most ideal choices for short wave photoe1ectron devices, such as u1 travio1et photodetectors

    Gan是最有前景的直接躍遷寬帶隙半導體材料之一，它具有優良的光電性質和優異的機械性能，被認為是制備短波長光電子器件的最佳材料之一。
  17. Tin sulfide ( sns ) has an optical band gap of 1. 3ev, which is close to the optimal band gap 1. 5ev

    Sns的光學直接帶隙為1 . 3ev ，接近於太陽能電池材料的最佳禁帶寬度1 . 5ev 。
  18. The dual - core air - guided photonic bandgap fiber couplers are designed and decoupling phenomenon has been found. coupling properties of the pbgfs with two adjacent air holes as fiber cores are analyzed. the decoupling point, where there is no

    對具有兩個相鄰纖芯的空氣傳導光子帶隙光纖的傳導模式和耦合特性進行了理論分析，在所分析的結構中發現了無耦合點，在該波長處兩個相鄰纖芯之間不發生能量轉移。
  19. To cancel the offset - voltage of the comparator, a switch capacitance circuit is used between the three pre - amplifier stages. the charge pump circuit is used to boost the clock voltage of the switch transistor

    採用電荷泵電路提供開關管柵過驅動電壓，帶隙基準電路作為電荷泵穩定電壓的輸入，有利於改善開關電路的性能。
  20. Optical absorption measurements show that mnxcd1 - xin2te4 is a direct energy gap semiconductor and the band gap shifts towards the high energy side with the increase of x

    採用光吸收法測得mn人d n 。 te 。晶體屬于直接帶隙半導體，其能隙eg隨著組分互的增加線性增大。
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