能阱 的英文怎麼說

中文拼音 [néngjǐng]
能阱 英文
energy sink
  • : 能名詞(姓氏) a surname
  • : 名詞(捕野獸用的陷坑) trap; pitfall; pit
  1. If the velocity of atoms is near to zero, the light for ces will tend to confine the atoms near to nodes and antinodes. the stability depends on the magnitude of the negative slope of the light force, the depth of the potential well and the momentum diffusion coefficient. it is important to select the parameters, e. g

    如果通過激光冷卻使原子速度降至很小甚至為零,光壓力的作用將使原子被較穩定地囚禁于激光駐波場的節點和反節點處,其穩定程度取決于該處光壓力曲線負斜率的大小、對應勢的勢深度以及動量擴散系數的大小,因此,如何在實驗中合理選擇激光強度、失諧量等顯得尤為關鍵。
  2. Binding energy of bound polaron in parabolic quantum well

    拋物中束縛極化子的結合
  3. They are combined with the advanced deliberative module and successfully resolve the problem of local energy trap

    通過慎思規劃解決了復雜環境下的局部勢問題。
  4. The fourth is that the study on the enterprise product mix adjustment from the side of theory is scarce and fragmentary, immethodical. according to the existing problems, this thesis tries to take individual enterprise as the object of study and research the tactics and methods of enterprise product mix adjustment, and the models of enterprise product mix adjustment and whose effect factors, and trap enterprise may encounter in the course of enterprise product mix adjusting and tactics to elude them

    針對上述存在的這些問題,本論文試圖從微觀層次上以單個企業為研究對象,對企業產品結構調整的具體策略及途徑進行完整系統的探討,並對企業產品結構的模型及其選擇的影響因素,企業在進行產品結構調整過程中可遇到的陷及規避的策略等實際問題進行深入的分析。
  5. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子激光器是一種性優越的發光器件,具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點,廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎,對器件的光學和電學性有著重要的影響,生長不出優質的材料體系,獲得高性的器件就無從談起,因此,材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  6. The squids are sneaky bastards. it could be a trap

    烏賊很狡猾這可是陷
  7. Fig. 3 and fig. 4 show that grooves in the width of 1 - 2micrometer on the surface of films sputtered at 180 forms optic trap of solar spectrum in the range of 0. 25 ~ 3micromete, and increase the absorption efficiency of solar radiation

    在溫度約180的情況下的薄膜表面形貌,薄膜表面寬度為一兩個微米溝槽,形成了對0 . 25 ~ 3微米太陽光譜的光學陷,可提高太陽光譜范圍量的吸收率。
  8. With results coming so thick and fast, it is no wonder that, as monroe says, “ many feel that ion traps are well ahead of other technology in the quest to build a large - scale quantum computer

    看到這些夠執行既多且快的成果,難怪門羅會說:很多人覺得,在建造大尺度的量子電腦上,離子比其他技術都先進多了。
  9. As the increasing of concentration, the host and guest interconverted, and the more the charge been transferred, the more the total energy decreased. finally, we deduce that the doping of rubrene in pvk just acting as traps in electroluminescent devices, and its trapping electrons arrested many cavities in pvk. and so, more pvk who did n ' t transport energy was concerned with trop and it makes less pvk was concerned with energy transfer in photoluminescent devices than in electroluminescent devices

    基於光致發光和電致發光中pvk與rubrene發光強度的不同,我們對低摻雜時的電致發光和光致發光進行了比較,並提出:在電致發光中, rubrene的摻入在pvk鏈間相當于陷,其陷電子對pvk空穴的吸引,使一部分在光致發光中不參與量傳遞的pvk參與了這種陷作用,使得在電致發光中不參與量傳遞的pvk可比光致發光中少。
  10. Small print in document can contain trap for the unwary

    文件中的小號印刷字體可藏有給粗心人設下的陷
  11. In cylindrical coordinates frame, by using biot - savart law and other techniques, the general formulas of these fields are gi en

    對ioffe來說,因其對中性粒子實現穩定囚禁而成為一種倍受關注的磁
  12. When the currents applied to the various wires are modulated in an appropriate way, a series of potential wells moves across the chip surface

    適當調整導線上的電流后,就會有一連串的位能阱在晶片表面移動。
  13. You will never ever actually kill a hunter with trap dance alone, what you want is force them to get off the trap a little bit, make them dance with you around the trap

    你永遠也別指望只靠在陷上跳舞就殺死一個獵人,你所希望的是逼迫他們稍微的離開陷,讓獵人在陷周圍繞著你轉圈。
  14. Experimental results are reported on temporal instability of phase - conjugate beam in a self - pumped ce : batio3 phase conjugator at 532nm. dark decay behaviors of sppc gratings in ce : batio3 are studied, for the first time to our knowledge, by measuring the decay of sppc reflectivities at 532nm and 790nm wavelengths at room temperature

    首次在實驗和理論上研究了自泵浦位相共軛光柵暗衰減的特性,與以往一深一淺兩個陷級參與光折變過程不同的是,發現了兩個深陷級同時參與了自泵浦位相共軛光柵的建立。
  15. We creatively apply this way to the bounded polaron in the parabolic quantum well and get the analytical expressions of the ground state energy of an electron bound to a hydrogenic impurity in a parabolic quantum well in an electric field

    我們開創性的把它應用到處理有拋物線量子中的束縛極化子,得到了有外電場的量子中,類氫雜質中的電子基態量的解析結果。
  16. As shallow electron traps ( sets ) dopants, the action of k4fe ( cn ) 6 that can increase photoelectron lifetime and photographic efficiency is analyzed. optimization concentration of k4fe ( cn ) 6 in cubic agcl emulsion is affirmed

    分析了k _ 4fe ( cn ) _ 6摻雜物作為一種淺電子陷摻雜劑對于提高光電子壽命、改善感光性的作用機理。
  17. Using a simple variation - fitting method , the exciton binding energies of a sawtooth - shaped quantum well are calculated as a function of an electric field , and the explanation of the results is also given

    採用一種變分擬合的簡單方法計算了電場下鋸齒型多量子的激子結合,對計算結果給出了合理的解釋
  18. Explody gas trap : with this ability, the assassin may lay down a tiny explosive trap which detonates on proximity of a target, thus spraying a toxic gas cloud

    毒氣陷:這項技允許刺客設立一個微型陷,在目標接近時爆炸並噴出毒氣。
  19. He can feign death, disguise as enemy team, and prepare some traps in critical areas

    偽裝死亡,化裝為敵方隊伍成員,以及在關鍵地點設置陷
  20. Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years. qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected. therefore, the ability to accurately control the band structure and hence the spectral response, as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s, makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ), especially available in the range of long wavelength 8 - 12 urn

    Gaas algaas量子紅外探測器( qwips )是近二十年來迅速發展起來的一種新型紅外探測器,它成功地利用了gaas勢和al _ xga _ ( 1 - x ) as勢壘之間的子帶間吸收,使之具有帶結構可精確設計從而獲得指定光譜響應的特點,加之成熟的材料生長技術、器件工藝,以及商業上可獲得大面積的vlsigaas集成電路,使得gaas algaasqwips尤其適宜製作8 12 m長波范圍的大面陣探測器。
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