脈沖式放電 的英文怎麼說

中文拼音 [màichōngshìfàngdiàn]
脈沖式放電 英文
pulsed discharge
  • 脈 : 脈名詞1. （動脈和靜脈的統稱） arteries and veins2. （脈搏的簡稱） pulse 3. （像血管的組織; 連貫成系統的東西） vein
  • 式 : 名詞1 （樣式） type; style 2 （格式） pattern; form 3 （儀式; 典禮） ceremony; ritual 4 （自然科...
  • 放 : releaseset freelet go
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 放電 : [物理學] （electric） discharge; electro-discharge; discharging
  1. This paper describes an automatic contest robot from the cctv holding “ the first robot tv contest all over the academician ”, describes the function and the realization of the robot in greater detail. the robot adopts two stepper motors in the stepped driving control system and putting - ball control system like fishing, with the control of at89c52 single - chip microcomputer, it can synchronously produce driving pulse for two stepper motors and control the moving of the robot along the predetermined line

    該競賽機器人採用步進電機作為行走驅動，釣魚桿式的放球控制系統，在at89c52單片機的控制下，分別為左、右步進電機產生脈沖，控制機器人按照預設的固定路線行走，待機器人到達預定的目標位置后，同時控制多個放球機構，從而能分別將賽球準確地放入到比賽圓筒中。
  2. This paper starts the research of the liquid floated pendulous accelerometer testing system according to the engineering. at first, this paper gives the brief introduction of the history and present status of accelerometer and its testing technology, the working principium and math model of the liquid floated pendu - lous accelerometer, and then, decides the binary width pulse force retrim loop as the design proposal of testing system, researches the transfer function of every part in the system emphasizly, analyses the stability of the whole accelerometer testing system from the angle of control theoretics by the open loop transfer function of system, and designed the correcting net, analyses the basal problems such as resolution, sampling restraint, precision and so on, designs the hardware testing circuits such as preamplification, band - pass filter, alternating amplifier, phase sensitive demodulatorn, pulse - width modulation, frequency scale circuit, moment current generator. finally, using the graphics program language labv - iew which is designed for testing field especially by ni accomplishes the solfware design of testing system, realized the testing functions

    首先對加速度計及其測試技術的發展歷史和現狀，液浮擺式加速度計的工作原理和數學模型等作了簡要的介紹，然後確定了以二元調寬脈沖再平衡測試迴路為設計方案，並從控制理論的角度進行了分析，著重研究了系統中各部分的傳遞函數，利用系統開環傳遞函數分析了系統的穩定性，同時設計了系統的校正網路;分析了二元調寬脈沖再平衡測試迴路的解析度、采樣約束以及測試精度等基本問題，並按照系統分析的結果設計了包括前置放大、帶通濾波、交流放大、相敏解調、脈寬調制、頻標電路以及力矩電流發生器等測試系統各部分硬體電路，驗證了電路的正確性，最後按照測試系統的要求，採用了美國ni公司專為測試領域所開發的虛擬儀器工具? ? labview作為測試軟體開發工具，利用該圖形化編程語言完成了測試系統軟體部分的設計，實現了測試功能。
  3. Second, the results of theory analysis and simulation research show that the output of one cycle controlled bridge switching power amplifier have dc offset because of the nonideal characteristic of reset signal. the magnitude of output dc offset voltage is proportional to width of reset pulse. a voltage compensation technique is used to solve this question, and the computation formula of compensation voltage is gived. the circuit compensated and not are researched through simulation and experiment, which results show that compensated circuit solve the output dc offset effectively

    其次，理論分析和模擬研究結果表明，由於復位脈沖的非理想特性，單周控制的全橋開關功率放大器輸出端存在直流偏置問題，其大小與復位脈沖的寬度成正比。針對輸出直流偏置問題，提出了電壓補償的改進方案，給出了補償電壓的具體計算公式。對補償前和補償后的方案進行了對比模擬研究和實驗研究。
  4. Adjusting digital potentiometer in controlling circuits of sps and capacitor charging and discharging circuit separately with industry control computer ( icc ), the peak value and repeat frequency of output pulse can be adjusted separately. controlling relays to choose different capacitors with icc, the width of output pulse can be adjusted

    利用工控機分別調節開關式穩壓電源控制電路和電容充放電控制電路中的數字電位器，就能分別調節輸出陡脈沖的幅值和重復頻率；利用工控機控制繼電器選擇不同的充放電電容，就能調節輸出陡脈沖的脈寬。
  5. Soon marconi ' s own spark - gap transmitters are sending morse - code pulse streams across his lab without wires

    不久，馬可尼自製的火花放電發送機，就能以無線的方式在實驗室里傳送摩斯電碼脈沖流了。
  6. Study on discharge characteristics of wire - plate pulse corona reactor

    線板式脈沖電暈反應器放電特性研究
  7. Discharge the capacitor to a load after it has charged fully enough, and this produces an exponential decay pulse ( edp ) on the load

    通過開關式穩壓電源產生高壓直流，並控制該電壓對電容器進行充放電就能輸出指數衰減陡脈沖波形。
  8. The main circuit is consisted of 18 thyristors circuit and protection circuit. with the help of control subsystem, it can get the output of low frequency voltage ( current ) with the shape of sine wave ; the core of the control subsystem is the cpu of 87c196kc, and the synchronization circuit, the pulse - widen circuit, and the power - enlarged circuit form the accessorial subsystem of the control system. it possesses all the functions of digital triggering, digital tuning, analog / digital conversion ; the input transfer can isolate the input and output ; and the circumfluence reactor can reduce the circumfluence

    主迴路採用由18個晶閘管組成的三相零式電路，並輔以晶閘管的保護電路，通過控制可以得到低頻正弦波的電壓（電流）輸出；控制迴路主要以87c196kccpu為核心，其外圍電路包括同步電路，脈沖拓寬電路，功率放大驅動電路等，完成了數字觸發、數字調節、模數轉換等功能；進線電源變壓器具有變壓和隔離作用；環流電抗器則實現了有效抑制主迴路瞬時脈動環流的功能。
  9. Based on the requirement of electrica l power plants, we designed a new type of sensors for stator winding partial discharge measurement online. the sensors are of good insulation, high sensitivity, easy installation on site, and good safety, suitable for on - site application

    根據現場的要求，本文研製出一種非接觸式空氣電容傳感器，它具有頻帶寬、絕緣性能好、靈敏度高的特點，可以在高壓端測量高頻放電脈沖，可以代替各種接觸式傳感器在發電機高壓母線端進行在線局部放電監測。
  10. We define the recombination time of excess electrons in p field as the minority carrier lifetime. in theory, we developed the equation between excess minority carriers lifetime and the open - circuit voltage decay ; moreover, the effect of capacitance to general open - circuit voltage is also investigated. both different efficiency solar cells are measured by the method and showed the relations between the minority carrier lifetime and the performance of solar cells, which provides great useful guidelines for fabricating high - efficiency silicon solar cell in industry

    根據太陽電池的工作原理，詳細地論述了用脈沖光源照射n / p結太陽電池時光電壓的產生，理論上給出了注入p區的電子復合帶來的開路電壓與少子壽命的關系，也研究了n / p結勢壘電容放電對開路電壓衰減的影響關系，推導了利用開路電壓隨時間衰減的關系來測量少數載流子壽命的理論公式。
  11. In this paper we discuss mca circuit, the sequential logic for mca data collection, for the setting of the uld, lld and the gain of pga, as well as the combinational logic for decoding circuits of the computer interface, based on cpld

    本文詳細論述了利用cpld實現的脈沖幅度多道電路及其數據採集的時序控制邏輯、閾值設定和程式控制放大倍數設定的時序控制邏四川大學碩士學位論文輯、以及與計算機介面的譯碼電路等組合控制邏輯。
  12. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
分享友人
分享到 Line

分享到臉書