腐蝕液 的英文怎麼說
中文拼音 [fǔshíyè]
腐蝕液
英文
corrosive fluid-
Corrosion reactions, with metal dissolution, can occur in both basic and acidic solutions.
使金屬溶解的腐蝕反應，可以在堿性也可以在酸性溶液中發生。Standard test method for evaluating stress - corrosion cracking of stainless alloys with different nickel content in boiling acidified sodium chloride solution
沸騰酸化氯化鈉溶液中不同鎳合量不銹鋼合金應力腐蝕裂紋評定的標準試驗方法It is used for pressure and vacuum of ammoniac liquid and gas as well as of zhe madia which can ' t corrode carbon steel, stainless steel and solders like tin and lead
儀表適用於測量氨的液體和氣體的壓力真空，也可測量對碳鋼、奧氏體不銹鋼和錫鉛類焊料無腐蝕作用的介質的壓力和真空。Applicable to lpressure measurements for liquid mediums at high temperature, such as corrosive, high viscous, crystallizable and solid - particles containing fluids commonly used in petrochemical indusery, etc
隔膜壓力表用於化工等部門生產過程中測量具有腐蝕性、高粘度、易結晶、含有固體狀顆粒、溫度較高的液體介質的壓力。In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper
本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。Based the eag - i etchant, a new etchant was developed, with which the etch pit pattern on ( 110 ), ( 111 ) and ( 100 ) faces of czt crystals can emerge immediately and effectually. this pager investigated relation between the ( 110 ) faces of cutting from crystals conveniently and accurately by laser reflex method. by the surface treatment, the nuclear radiation detector was fabricated with ( 110 ) of czt crystal and strong 241am responsibility was observed
在改變e _ （ ag ）腐蝕液的配方的基礎上，研製了新的腐蝕液，可方便、快速、有效的顯示czt不同晶面的缺陷蝕坑形貌;研究了利用激光正反射法和自然解理的不同（ 110 ）面之間的關系，方便、快速、準確的進行定向切割晶體的方法;採用生長的czt單晶體自然解理的（ 110 ）面，經過表面處理，試制了探測器元件，對24lam有較強的響應。Purpose ： the type of 2cy is applicable to transport the lube or analog, the temperature is not more than + 80 and the thickness is from 5 to 1500 cst, no causticity, and no solid granules or fiber, also is applicable for the fluid drive system and ships, etc
2cy系列適用於船舶等輸送溫度不高於+ 80 、粘度在5到1500cst之間、無腐蝕性、無固體顆粒和纖維的潤滑油式或類似潤滑油的其他液體，並且適用於液壓傳動系統。Testing method for galvanic corrosion in pseudo physiological solution
假生理溶液中的電解腐蝕的檢測方法If any larger amount of gastric juice is dumped into the duodenum, it eats its way into the wall.
大量消化液一旦傾入十二指腸，就會腐蝕腸壁了。A mordant helps fix the dye to the material
腐蝕液幫助染料固定在原料上。Transportation of non - toxic, non - corrosive, low temperature liquefied gases. evacuated double shell road tankers. service equipment
無毒無腐蝕液化氣低溫運輸.真空雙壁罐車.檢修設備Theoretical analysis and experimental results show that the mentioned methods above can simplify the process condition, improve the etched effect, shorten the etching time and obtain more even etched surface. 2 ) laser - assisted wet sequencially - selective - etching method has been developed this method can be applied when the corrosion solution is mixed solvent
2 ）提出了激光化學誘導液相次序選擇腐蝕法該方法適用於腐蝕液為混合溶劑的情況，例如， h2so4 - h2o2對gaas基片進行腐蝕時，先採用h2o2對基片進行氧化腐蝕處理，再利用h2so4進行激光化學腐蝕。In order to make integration of theory with practice, a lot of experiments have been done. mask - making technology, photoetching and wet - etching processes have been optimized. the author also presents the application and commercial value of silicon v - groove arrays
在實踐上，對製作工藝積極探索，提出新的制備硅掩蔽膜的工藝方案，對影響光刻質量的因素深入分析，試驗摸索出適用於v型槽的各向異性濕法腐蝕的腐蝕液配方，獨立優化設計了製作硅v型槽的相關工藝，製作出高質量的硅v型槽。It is mainly made of reinforced pp with short time of self - priming and long life, a kind of zero - leakage pump for automation long distance control and fluid transmission of strongly corrosive liquid
該泵以增強聚丙烯為主要材料，自吸時間短、壽命長，是自動化遠程控制和流動輸送強腐蝕液體的無漏泵。The corrosion behavior of porous silicon in hf / h2o2 solution has been studied. it is found that the inner corrosion of porous silicon takes precedence, that is, the solution enters the pores through capillary and the whole porous silicon collapses because of the simultaneous corrosion of the silicon pillars
研究了多孔硅在hf / h _ 2o _ 2溶液中的腐蝕行為，發現多孔硅的腐蝕以孔內腐蝕為主，腐蝕液通過毛細效應進入納米孔內，孔壁被腐蝕掉后使得多孔硅整層同時坍塌。Subsequently, the resin is allowed to harden. the specimen is then immersed in a corrosive solution to soften and digest the uninjected parts
待樹脂硬化后，便把標本放于腐蝕液中，以軟化和溶解沒有注射的部位。So the mirror and mechanical part can be fabricated in a one - level mask step by bulk micromachning of ( 100 ) with koh etching. we can on off the light path and switch the light exchange by controlling the movement of mirror
本論文使用傳統的koh腐蝕液，利用硅材料的各向異性的特點，加工出了垂直於襯底表面的微鏡結構，利用這種微鏡結構可以完成光線的切換，實現光路的開關功能。1 ) in the solutions with high hno3 concentration, the etching is similar to chemical polishing which produces flat surface. 9. 3 % surface reflectance is obtained through stopping etching when the blue color is appearing on the surface, which is lower than 15. 7 % reflectance of sio2 layer arc
這對于提高太陽電池的效率是極有益的。 （ 2 ）反射特性、形貌和腐蝕液的關系1 ）在高hno _ 3的溶液中，近似化學拋光，制備的樣品表面相對光滑。This dessertation systematically researched dislocation and ab microdefects etched by molten koh and by ab etching respectively in gaas substrate, which were provided by merchants from home and overseas, as well as their influence on electrical parameters
本文系統地研究了國內外各生產廠家提供的gaas襯底中用熔融koh腐蝕的位錯、 ab腐蝕液腐蝕出的ab微缺陷的密度和分佈情況以及它們對襯底電參數（電阻率、遷移率、載流子濃度）的影響。Process parameters related to the film quality are discussed ; relations are found between the etching rate and different process parameters when sio2 and cr thin films are etched in an inductively coupled plaslma ( icp ) etching equipment ; the tmah eroding solution ’ s ph value under different temperatures and concentrations are studied, since the etching process can be controlled by the ph value
3 .初步研究了利用pecvd淀積si3n4薄膜的工藝，討論了影響薄膜質量的相關工藝參數;初步研究了用icp刻蝕sio2和cr的相關工藝;通過分析不同濃度tmah腐蝕液在不同溫度下其ph值的變化，研究了以溶液ph值作為腐蝕溶液的控制參數。分享友人