致畸態性 的英文怎麼說

中文拼音 [zhìjītàixìng]
致畸態性 英文
teratogenicity
  • 致 : Ⅰ動詞1 （給與;向對方表示禮節、情意等） deliver; send; extend 2 （集中於某個方面） devote （one s ...
  • 畸 : Ⅰ形容詞1 （偏） lopsided; unbalanced2 （不正常的; 不規則的）irregular; abnormalⅡ名詞[書面語] （零...
  • 態 : 名詞1. （形狀; 狀態） form; condition; appearance 2. [物理學] （物質結構的狀態或階段） state 3. [語言學] （一種語法范疇） voice
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  1. So. accompanying with the china ' s whole reform & open policy market - oriented economy practicing, weaken deformed ideoiogy educational mission ' s abnormal changement, and the direct effects are the expand instrumentalism & the lost of vaiue ration and finally cause the dissoive of life world & alienation of people ' s life. in order to lead adolescence to understand life correctly elevate spirit

    所以，伴隨中國全方位的改革開放，實行市場經濟，畸形意識形態的淡出，教育使命的畸變與失真等，所帶來的直接結果是青少年一代工具理性的肆虐和價值理性的迷失，最終導致生活世界的消解與人的生命的異化。
  2. As to the video signal, alarm signal, control signal, are all weak electricity signal, exceedingly easily be subjected to the jam, in case the power supply system does not steady, wave propag ation is greatly, the harmonic content of power source overtops, the veins wave factors are great unduly, and even power source equipment breakdown, outputting abnormal, will be about to affect the video signal image effect, and dependability cuts downs to the security and alarming system. we adopt fast fu lye ' s mutation rule - fft alternatives, by the way of carrying fft alternatives to the local junction circuit, regulated power supply, ups ' s power source, and switch power source, thereby diagnose every degree harmonious wave content of power souse, and abnormal coefficient, compared to the normal working situation. thereby diagnose out the working condition of the regulated power supply, ups ' s power source, and switch power source

    如果有供電系統不穩定、波動大，電源的諧波含量過高，紋波系數過大，乃至電源設備損壞、輸出異常等情況出現，將會嚴重影響視頻信號的圖像效果，大大降低防盜系統的穩定性和可靠性，我們採用快速傅利葉變換原理，即fft變換，通過對市電、穩壓電源、 ups電源、開關電源等的電壓信號進行fft變換，從而得出信號中各次諧波的含量及信號畸變系數，並將其與正常工況下的參數進行對比，從而進一步診斷出穩壓電源、 ups電源、開關電源等設備的運行狀況；組成監控系統的設備長期處于工作狀態，往往由於設備散熱條件不好、設備老化故障等原因導致設備表面溫度過高，從而影響設備的正常運行，降低設備的使用壽命。
  3. The following are the results from the unreasonable utilization for the city area : food producing become more difficult because of the excessive declining of farmland ; management of the land resources turn to be unmarketable and the land is fallowed and wasted ; the ecological crisis could be aroused and the exist and development of the city be threaten because of the destroying of the ecological balance ; the improvement of social economy and quality of people ' s life is seriously banned by the unnatural shortage of the land supply, or the abnormal increase of the land price ; the outline of a city could n ' t be impressive, or the aesthetic value could n ' t be carry out on account for the monotony in the city ' s construction, etc. too much lessons show that we must pay more attention on the research of the utilization of the city ' s land in order to make scientific, forecasting and reasonable principles, laws and policies to regulate activities for people planning and exploiting city land

    對城市土地不合理利用的後果是：或造成耕地大量被侵佔，給糧食生產帶來危機；或造成土地資源的大量閑置和浪費，引起土地資源配置的非市場化；或造成生態環境失衡，引發嚴重的城市生態危機，危及城市未來的生存與發展；或導致城市土地供應的人為短缺及房地產價格的畸形高漲，嚴重阻礙經濟增長和人民生活質量的改善；或城市土地結構趨同，缺乏鮮明的個性和特點；或城市土地上的工程都千篇一律，難以樹立城市形象，難以體現美學價值等等。理論和歷史教訓警示我們，土地資源是人類社會可持續發展的基礎，必須切實加強對城市土地利用的研究，制定出具有前瞻性、科學性和實踐性的與城市土地利用相關的法律、法規和政策，以規范人們的用地行為，指導城市規劃、土地開發等實踐活動。
  4. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。
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