薄基板 的英文怎麼說

中文拼音 [bójībǎn]
薄基板 英文
thin core
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 板 : Ⅰ名詞1 （片狀硬物體） board; plank; plate 2 （專指店鋪的門板） shutter 3 [音樂] （打拍子的樂器） ...
  1. A detailed analysis of the electrical properties of ato thin films was carried out in order to investigate the sb / sn atomic ratio and substrate temperature ' s influence on the ato thin film. a convictive explanation brought forward to illustrate the changing of the electrical ； properties of the ato thin film in different conditions

    在溫度較低時（ < 500 ） ，薄膜的方塊電阻隨成膜溫度的升高而降低；當基板溫度繼續升高，薄膜的方塊電阻隨基板溫度的升高而增大，這主要是因為玻璃基板中k ~ + 、 na ~ +離子向薄膜中的擴散。
  2. It is found that the ca ( no3 ) 2 - po ( oh ) x ( oet ) 3 - x - c2h5oh system with cf3cooh added gives out much gas during heat - treatment which will result in films with many c

    Fha薄膜較純ha薄膜有較好的與基板的結合強度，這得益於兩方面：一方面fha熱膨脹系數較ha小，與
  3. The distributing of fluorine in films can be controlled by their thickness, which changes according to deferent parameter in preparation. films with five layers have perfect distributing state of fluorine

    其氟在fha薄膜中的分佈為內外相同，但在經五次塗膜的fha薄膜中，靠近基板附近氟含量有所增加。
  4. Tio2 thin films with super hydrophilicity were deposited onto soda - lime glass using the spray pyrolysis method, and the films doped with different content of fe3 + or zn2 + were also prepared

    根據防霧易清潔玻璃的性能要求，利用噴霧熱解法，以透明載玻片為基板進行薄膜的制備。
  5. The 3d electrons increased with the content of mn doping increasing, and the electrical property increased accordingly as the electron transport path improved. it is confirmed that all the orthorhombic perovskite phase which is formed initially at the heat treatment temperature of about 600c and thoroughly above 850c are observed in the lcmto thin film deposited on si ( 100 ) substrate by rf magneto - controlled sputtering

    確認了採用射頻磁控濺射法于si （ 100 ）基板上生長的薄膜至多在600熱處理已開始形成晶相，形成的晶相全部是正交晶系鈣欽礦相，提高熱處理溫度，薄膜中晶相含量相對增大，高於850后晶相基本形成完畢。
  6. For enhancing the soakage capability and the combine intension between inorganic films and stainless steel plate, and improving the reactivity of stainless steel, to enhance the combine intension between sca film and stainless steel plate, the stainless steel plates are oxidized. the experiment prepared two oxidized stainless steels in different oxidation degree, aa and ab, respectively used as experiment plates in silver doped tio2 or sio2 antibacterial stainless steel and silver doped sca antibacterial stainless steel

    為提高無機薄膜和不銹鋼基板之間的浸潤性和結合強度，以及為使不銹鋼基板具有更高反應活性，以提高有機硅烷薄膜與不銹鋼基板間的結合能力，對不銹鋼基板進行氧化處理，制備兩種氧化程度不同的不銹鋼： aa和ab ，分別作為摻銀tio _ 2 、 sio _ 2抗菌不銹鋼和摻銀有機硅烷抗菌不銹鋼的基板材料。
  7. The spray pyrolysis method has large application potency to be a method to prepare the economical thin films for its unsophisticated equipment, low - cost and high deposition rate which are great advantages if the technique is to be scaled up for industrial applications

    噴霧熱解法具有沉積溫度、速率容易控制，對基板選擇性低，所得薄膜形貌均勻緻密等特點。而且設備簡單，成本低廉，在大規模工業生產方面有很大潛力。
  8. Strength control of steel for cold rolling produced by thin slab continuous casting and rolling

    薄板坯連鑄連軋線生產冷軋基板的強度控制
  9. Standard specification for asphalt - coated glass - fiber venting base sheet used in roofing

    屋面材料用瀝青塗覆玻璃纖維通風薄基板標準規范
  10. ( 3 ) according to the study of heat treatment process, heat treatment ambience, airflow and heat treatment temperature were considerd as the important influences on the quality and property of ybco films. through optimizing the process, the ybco films were prepared on sto single crystal, and their room temperature resistance was about 200 ybco films also were fabricated on the sto buffered si substrate, and their room temperature resistance was about 300d

    （ 3 ）根據本文熱處理過程的工藝探索，認為熱處理氣氛、氣流量及處理溫度是影響薄膜質量及性能的重要因素，通過優化工藝過程，在鈦酸鍶（ sto ）單晶上制得的ybco薄膜表面質量良好，室溫電阻200左右；而在預制了鈦酸鍶（ sto ）緩沖層的si基板上制備的ybco薄膜的室溫電阻為300左右。
  11. Moreover, the two - step heat treatment method was utilized in the preparation of the films, the films prepared by the first coating with 550 ? heat - treatment and the second coating with of with 500 ? heat - treatment ( b type films ) were highly c - axis oriented with smooth, dense and uniform surface morphology

    此外，結合高溫和低溫熱處理方法優點的兩步熱處理法得到的b型薄膜同時具有較好的c軸擇優取向性和更為平整均勻的表面形貌。另外，在硅基板上也制備出了良好的c軸擇優取向性的摻雜氧化鋅薄膜。
  12. It is formed when an irritant gets inside of a shell and the shell protects itself by coating the irritant with the same material of its lining. in essence it is formed in the same way pearls are formed

    在菲律賓，常見的珍珠母工藝品是茶杯墊，一般用從珍珠貝殼內側剝離出來的珍珠母貼在金屬基板上，然後用一條很窄的金屬薄片鑲邊。
  13. A majority portion of our product is for the manufacturing of multilayer printed circuit boards for computer and communication application. we design our products for high level multilayer applications and we pride ourselves at meeting the stringent quality requirements associated with such manufacturing process

    為配合未來市場發展趨勢，臺光的銅箔基板以高層次印刷電路板所需高性能薄基板為主，應用於輕薄短小的高性能資訊、通信電子產品。
  14. A thin plank fastened to the side of a boat or to the sill of a port to keep out the sea and the spray

    擋水板，防浪板縛于船邊或港基的薄木板。用來阻擋海水及其噴濺
  15. In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous

    實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。
  16. Three kinds of different methods, namely anode oxidation, micro - arc oxidation and dc reactive magnetron sputtering, were employed to treat aluminum substrate which is used for power electronic devices in order to get an insulating surface by form a layer of aluminum nitride ( aln ) or aluminum oxide ( al2o3 ) film

    本文分別採用陽極氧化法、微弧氧化法和磁控反應濺射沉積氮化鋁薄膜的方法對功率電子器件用金屬鋁基板表面進行絕緣化處理。
  17. The films prepared under 425 ? is composed with amorphous snoi and its sheet resistance is very high. with the substrate temperature ' s increasing, the degree of crystallization, film thickness increase and electrical resistivity, sheet resistance decrease obviously. when the substrate temperature is higher than 525 ?, the temperature ' s increasing is not of benefit to the films thickness and sheet resistance

    常壓熱分解cvd法制備的sno _ 2在較低基板溫度下制備出的薄膜基本上是非晶態的，方塊電阻很高；隨著基板溫度的升高，薄膜厚度增加，薄膜結晶程度提高，薄膜電阻率和方塊電阻均顯著降低；當基板溫度高於525以後，隨著基板溫度的升高，薄膜厚度基本不再明顯增加，薄膜結晶程度繼續提高，薄膜電阻率繼續降低，方塊電阻不再明顯降低。
  18. The hydropilicity and photocatalysis of the samples were studied. the effects of the substrate temperature, carrier gas flux, o2 flux and n doping level on the microstructure, composition and properties of the films have been studied synthetically

    文章系統研究了基板溫度、載氣流量、 o _ 2流量和n摻雜量等工藝參數對tio _ 2薄膜微結構、組成和性能的影響。
  19. The pst thin films in which the perovskite structure primarily formed were fabricated successfully on ito / glass substrates by the sol - gel method

    本文採用溶膠?凝膠技術在ito基板上成功制備了性能優越的多晶鈦酸鍶鉛薄膜材料。
  20. ( 2 ) the ysz and sto buffer layers were prepared by sol - gel process on si substrates. the ysz and sto films could be used as the buffer layers between si substrate and ybco films

    （ 2 ）用sol - gel法在si基板上制的釔穩定氧化鋯（ ysz ）和鈦酸鍶（ sto ）薄膜作為si與ybco間的緩沖層是可行的。
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