薄膜制動的 的英文怎麼說
中文拼音 [bómózhìdòngde]
薄膜制動的
英文
diaphragm actuated-
Organic electroluminescent devices ( oleds ) have aroused many scientists " interests because of their potential adventages in low - power, emissive, flexible, cost - competitive, flat panel displays. red, green and blue light - emitting devices are readily avaible
有機薄膜電致發光器件具有驅動電壓低、發光效率高、制備容易、可製成大面積的平板顯示器以及顏色豐富等特點,已引起各國科學工作者的廣泛關注。Series of guowei dry - method composite machines as new product are explored with our many years ' experience, the requirement of the users. the first metal of this machine is adopted with : photo - ecectricity auto. tracking " correcting deviation equipment, magnetic powder tension control. pneumatic back pressure shifting blade, oven temperature controlled qutomatically, big roll with oil heating, coating composite pneumatic control as well as double frequency governor etc. it will make the machine with fast speed, lower voice, low polluted by air, shout consumptionfor energy, stable working etc. especially suitable for al - foil with smooth surface and no enough firming, glass paper, polyester ect. the composite material with hard strength, fireproof, anti - ventilation, anti - fatty, frozen, dudrable steam etc character. it is widely used in food, pharmacy, as well as daily articles to package
「國偉」 、系列乾式復合機,是我廠根據多年的復合機製造經驗及結合客戶需求,開發的新產品,該機第一基材採用了「光電自動跟蹤」糾偏放卷裝置,磁粉張力控制、氣動背壓移動式刮刀、烘箱溫度分段自動控制、大輥筒導熱油加熱、上膠復合氣動控制及雙變頻調速技術,使該機具有復合速度快、噪聲低、空氣污染小、能耗低、運行平穩等特點,適宜於表面光滑的鋁箔玻璃紙聚酰胺等與聚乙烯、聚丙烯等薄膜的復合,復合薄膜具有強度高、防水、防透氣、防油脂、可冷凍、蒸煮等優點,廣泛應用冷凍食品、乾燥食品、醫藥品及日用品的包裝。The teach box is made up of lcd and film keys, which makes the operation easy and convenient ; while the main microcomputer control system makes the communication between the teach box and hypogenous microcomputer possible and carries out teach and playback function. the servomotors are under the control of hypogenous microcomputers
示教盒由液晶顯示器和薄膜按鍵組成,操作簡單,方便;主機控制系統則主要完成與示教盒和下位機的通信,並完成機器人的示教再現控制;下位機則直接控制各個關節實現所要求的運動軌跡。Compared with bst materials, especially in thin films, ps t has smaller ferroelectric critical size, lower crystallization temperature, and compatible fabrication with si micro - electronics, so it can meet the need of the high quality si - based integrate circuit ( ic ). moreover, it is important to promote the development of the miniaturization and integration for the modern devices
與bst相比,特別作為薄膜材料, pst的鐵電臨界尺寸較小,晶化溫度較低,制備工藝與si微電子工藝兼容,更能夠滿足高性能的si基集成電路的需要,對推動現代器件發展的小型化和集成化具有十分重要的意義。Promax tension ind corp has long sold and manufactured a variety of custo mized air shafts / air chucks / safety chucks, edge position control systems / epc, powder / air / disk brakes and clutches, ac / dc motor control systems, re - winding / un - winding systems, tension control systems, web inspection systems, automatic color register systems, servo - vector control systems, mmi interface and supervisory control and data acquisition ( scada ) systems and others such as slitting, winding, laminating, extruding, coating, and gravure printing machines, even other auxiliary devices etc. for webs such as paper, films, rubber, textiles and foils
本公司長久以來已經從事製造及銷售有關紙類,薄膜,膠片,紡織品,橡膠等薄片卷材的捲筒物控制糸統周邊設備,諸如氣漲軸,氣漲/安全夾頭,邊緣追蹤器裝置,磁粉/氣壓/碟式煞車器及離合器,交直流轉矩馬達控制系統,收放料車動系統,張力控制裝置,印刷機靜態觀測器,自動套色控制裝置,伺服向量控制系統,人機介面及監控系統及其他有關印刷,貼合,分條,復? ,塗布,上膠,押出,淋膜等產業機械To set up reasonable designing and manufacturing techniques and accurate calibration system and to speed up forming the native pvdf pressure sensors is the direction of this project. first, based on the piezoelectric theorem, the theoretic support of pvdf pressure sensors is deduced. according to purposes of practical projects, special purpose sensor configurations are designed and the corresponding calibration system based on shpb ( split hopkinson pressure bar ) technique is built in succession
本文從壓電材料的一般壓電控制方程開始,導出了pvdf壓電薄膜測壓技術的相關論據;根據測試目的以及被測結構的特點,設計了多種夾心式的傳感器構造形式;摸索出了一套基於國產pvdf壓電薄膜製作壓力計的加工、安裝工藝;建立了一套基於系統集成技術的多點pvdf壓力測試的數據採集、處理系統;建立了一套基於shpb技術、適用於實際工程應力范圍的pvdf壓力計的動態標定方法,並對兩種厚度的國產pvdf壓電薄膜進行了標定。To find the parameters of preparation and annealing process associated with the best electrochromic properties of these films, following researches and experiments were carried out : to compare the visible light transmittance of the colored state with bleaching state of the electrochromic films which were annealed at different temperatures and for different duration, to count the dynamic optical density change, and to test the i - v relations of these films " electrochromic cycles and their colored / bleaching response time
對經過不同熱處理溫度和不同熱處理持續時間得到的薄膜樣品的著色褪色可見光范圍內透射光譜的比較,計算薄膜動態光密度變化量的大小,測試薄膜著色褪色循環伏-安關系以及薄膜著色褪色響應時間的快慢,尋求到薄膜呈現最佳電致變色性能時所對應的制備參數與熱處理參數。Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth
文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上,討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學,在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下,利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響Electric cabinet as well as control cabinet in the sub cabinet, containing all controls such as two temperature controllers, on / off push buttons for blower, film drives, lamp and pneumatic opening / closing of nip rolls. the film attachment is equipped with it ’ s own electric supply so that the die and flange can be heated up even when removed from the extruder
電氣櫃帶有所有控制模塊包括兩組溫度控制器,吹膜機開/關按鈕,光源和夾緊輪的氣動張開/閉合控制。薄膜附加設備帶有自己的供電模塊,因此即使同擠出機分開也可以將模頭和法蘭單獨加熱。In situ diagnosis of plasma environment for synthesizing diamond film was conducted by langmuir single probe and optical emission spectroscopy. the mechanism of diamond growth was investigated and the n - type diamond was deposited by glow plasma assisted chemical vapor deposition ( cvd )
本文通過langmuir單探針和光發射譜對合成金剛石薄膜的等離子體環境進行了原位診斷;初步探討了金剛石薄膜生長的動力學過程;並採用輝光等離子體輔助化學氣相沉積( cvd )技術制備得到了n型金剛石薄膜。The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
採用pld技術進行了碳氮化合物薄膜沉積,得到了含氮量為21at的cn薄膜;研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響,給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因;引入脈沖輝光放電等離子體增強pld的氣相反應,給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑;應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ,得到了含n量為56at的晶態cn薄膜;探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系,證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果;採用光學發射譜技術對cn薄膜生長過程進行了實時診斷,得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律,給出了cn薄膜沉積的主要反應前驅物,揭示了cn薄膜特性和等離子體內反應過程之間的聯系;採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性,揭示了si原子對薄膜生長過程的影響,給出了si基表面碳氮薄膜的生長模式;在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積,證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性,並可顯著提高晶態碳氮材料的生長速率。Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property. many researches have been made on silicon nitride, especially on preparation for it with all kinds of cvd ( chemical vapor deposition ). but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail, especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment
氮化硅( si _ 3n _ 4 )具有許多特殊的優越性能,是一種前景廣闊的薄膜材料,並已廣泛應用於微電子、光電子領域,人們對此做了大量的研究,但主要集中在用各種化學氣相沉積的薄膜制備上,對直接氮化法的機理和動力學研究較少,特別是矽片在氮氣保護的熱處理條件下的直接氮化行為研究更少,甚至對矽片在熱處理條件下能否與惰性的氮氣發生反應等問題依然存在爭論。The author makes a mathematics model by viscous hydrodynamics and so on theories of the flowing material a and b on the board, and deduces the formulas of the film thickness and perfusion measure. i also analyze the surface tension of liquid, in order to find out the best technical parameters and to control
作者利用粘性流體力學等理論建立了a 、 b混合料在太陽能電池板上流動的數學模型,從而推導出薄膜的厚度和灌注量的計算公式,並對所形成液面的表面張力進行分析,以找出最佳的技術參數,以便對其進行控制。Due to the component of natural gas is very complex in different zone of our country, the product has taked on special design, it set up moore component factor of thirteen kinds, which offer user to select and setup, so as to satisfy measurement for contains various component natural gas, at the same time established many take - pressure way in order to suit to different measure device, and have automatic calculate and display super - compression factor function
A q型操作器輸出svout : 010ma 420ma 05v 15v信號,可直接驅動執行機構變頻器或再由伺服放大器去驅動電動調節閥門或由電氣轉換器和閥門定位器去驅動氣動薄膜閥。操作器處于自動工作狀態時,其信號輸入svin和操作輸出信號相當於是直通的。以實現dcs系統或調節器對執行機構的自動控制。Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system
該系統可通過沉積參數的精確控制,以控制沉積過程,減少金剛石膜生長過程中的缺陷,並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程;利用微波對材料的選擇加熱特性,通過構造等效方程,並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中,建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型,為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備,並對基片加熱材料進行了設計和優選,以獲取大面積均勻的溫度場區,甚至獲得大於基片臺尺寸的均勻溫度區;作為研究重點之一,開展了微波等離體化學氣相沉積金剛石的成核與生長研究,系統地研究了在( 100 )單晶硅基片上mpcvd沉積金剛石膜的實驗過程中,基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響,分別用raman光譜、 x射線衍射( xrd ) 、掃描電鏡( sem ) 、紅外透射光譜( ir ) 、原子力顯微鏡( afm )對薄膜進行了表徵,確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。Mef are non - indluctively wound with metallized polyester film as the dielectric / electrode with copper - clad steel leads and epoxy resin coating they are suitable for blocking, copling decoupling filtering, by - pass and timing circuits, they find application in telecommunication, date processing, industrial instruments. and automatic control system epuipments
Mef為非感應式,用鍍金屬聚酯薄膜作為電介質/電極,導線採用鍍錫銅包線和環氧樹脂包封.本品適合於耦合、濾波、整流和計時電路中,在遠程通訊、數據處理、工業儀表和自動控制系統的設備中得到了運用。This paper presents the effects of some features on the productivity of raw c60 materials, such as distance and approaching speed of electrodes, helium partial pressure and arc current etc. then we separate and purify the raw materials and obtain pure solid c60 of 99. 9 % and compare the purification efficiency and effect of different fluxion phase and fixed phase and discuss the effects of the experimental conditions, such as the depositing speed, the type of the substrate, the surface structure of the substrate and the temperature of the substrate. finally, we use xps, afm, ultraviolet, infrared and raman to analyze the component, structure and feature of the films qualitatively and quantitatively
本文首先研究了氦氣分壓、弧電流大小、電極間距以及電極推進速度等實驗條件對制備c _ ( 60 )粗品產率的影響;接著選用柱色譜法分離提純得到了純度大於99 . 9的c _ ( 60 )固體,比較了不同流動相和固定相的提純效率和效果;然後採用自己改進后的真空鍍膜機,利用電阻式加熱蒸鍍方法,得到了純c _ ( 60 )薄膜和不同摻雜比的銀摻雜薄膜;探討了沉積速率、襯底種類、襯底表面結構以及襯底溫度等實驗條件對薄膜結構的影響;最後通過xps , afm ,紫外,紅外,拉曼對薄膜的成分、結構和特性作了定性和半定量分析。The chemical composition, micro - structure and optical properties and its application of tio2 thin films deposited on k9 glass by using reactive electron - beam evaporation ( reb ) are studied through sem, tem, xps, xrd, spectroscopic ellipsometry ( se ) and uv - vis spectrophotometer in the dissertation, and the progresses of nucleation and growth of thin film are discussed from the point of view of dynamics and thermodynamics so that a structure model of tio _ ( 2 ) thin film is brought forward
本文採用sem 、 tem 、 xps 、 xrd 、橢圓偏振儀( se ) 、 uv - vis分光光度計等分析手段系統地研究了電子束反應蒸發方法在k9玻璃上制備tio _ 2薄膜的成分、結構和光學性能以及tio _ 2薄膜在光學多層膜中應用,並開發了膜系設計軟體。文中還從動力學和熱力學角度分析了tio _ 2超薄膜的形核生長過程,得出了tio _ 2薄膜的組織結構模型。Samples are prepared at 1100 and 1200 for different time from 5 minutes to 4 hours to study direct - nitridation kinetics. the thickness of the silicon nitride films is measured by single - spot thickness system produced by filmetrics co. ltd. the direct - nitridation kinetics curve is attained and the maximum thickness of the silicon nitride film is about 50nm
為研究矽片氮化動力學,在1100和1200的溫度下制備了從5分鐘到4小時的各個氮化時間的樣品,並採用了不同晶面取向的矽片和不同的矽片放置位置,用filmetrics公司生產的f20型膜厚測量儀測得各個樣品的厚度,得到了實際的氮化動力學曲線和氮化薄膜的最終膜厚約為50納米,氮氣曲線較好地符合了氣固反應類型的動力學曲線。In the present dissertation, nanocomposite thin films and extended molecular devices were prepared via the electrostatic self - assembly monolayer technique. the structures and the properties of the thin films were studied by uv - vis spectroscopy, x - ray diffraction spectroscopy, x - ray photoelectron spectroscopy, laser raman spectroscopy, atomic force microscopy, fiber optic experimental setups and so on. a novel fiber optic humidity sensor based on the self - assembled polyelectrolyte multilayer thin films was presented, and other thin film devices were also described
在對納米復合薄膜研究的重要性及自組裝薄膜技術的發展動態進行綜合分析的基礎上,開展了利用靜電吸附自組裝技術制備納米復合薄膜及廣義的分子器件的研究,採用紫外-可見光光譜儀、 x射線衍射儀、 x射線光電子能譜儀、激光拉曼光譜儀、原子力顯微鏡、光纖光學系統等研究了復合薄膜的結構與性能,研製了一種光纖濕度傳感器和其他薄膜器件。分享友人