薄膜形成 的英文怎麼說

中文拼音 [bómóxíngchéng]
薄膜形成 英文
film buildup
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  • 薄膜 : thin film; film; diaphragm
  1. The enterprise flytex koch sauer gmbh co buoyancy membranes kg is well - known and engaged not only in rimsting, but also in the specialized industries of its sphere of activity, with boxes, airships, assembly details and at the same time with ballonet, balloon and standard programme a competent partner

    Flytex koch sauer gmbh co buoyancy membranes kg是一家現代化的、可靠的專門產品供應商，這家供應商從事系留氣球，球形玻璃瓶、氣球，副氣囊，裝配細節，充氣光電管，外罩、外殼，飛船、飛艇，薄膜、膜片，程序、節目，船舶、船，切削刃、刀刃，鉛垂、探針，特殊成型，標準程序的製造、銷售。
  2. C ) we found that the negative bias or ion bombardment was important to the orientation variation of the films. low bias is helpful for the basal plane orientation, while under high bias the films shows that the c axis of bn was nearly parallel to the substrate

    C ）偏壓或離子轟擊對取向有重要影響，低偏壓有利於形成基面對襯底平行的取向，而在高偏壓下，薄膜表現為c軸平行襯底的取向。
  3. Plastic mulches create a barrier preventing fumigant gases from escaping to the atmosphere, thereby increasing their effectiveness

    塑料薄膜覆蓋可以形成防止煙熏氣體逸散到大氣的屏障，所以提高煙熏氣體的殺蟲效果。
  4. The heat - reaction characteristics of ni / si and tin / ni / si structure and the regularity for forming the nisi film have been studied deeply and formed the excellent ni - salicide shallow junction diode

    文中對ni si和tin ni si的熱反應特性以及nisi薄膜的形成規律進行了詳細的研究。制備了優質的ni硅化物淺結二極體。
  5. Upon comprehensively reviews of the predecessors ? results, using the experience of other countries for reference, and implementing thin film technology, the author have developed the microsensor in this thesis by sputtering metal material on a silex substrate

    本文在綜合評述前人工作成果的基礎上，借鑒國外的製作和研究經驗，利用薄膜技術，在石英基片上濺射銅、鎳和二氧化硅薄膜，形成薄膜熱流計。
  6. The spray pyrolysis method has large application potency to be a method to prepare the economical thin films for its unsophisticated equipment, low - cost and high deposition rate which are great advantages if the technique is to be scaled up for industrial applications

    噴霧熱解法具有沉積溫度、速率容易控制，對基板選擇性低，所得薄膜形貌均勻緻密等特點。而且設備簡單，成本低廉，在大規模工業生產方面有很大潛力。
  7. Nuclear particle track - etched anti - counterfeit marking is a new weapon against fake products. the mark is manufactured by intricate high technology in state - controlled sensitive nuclear facilities which ensures that the mark can not be copied. the pattern of the mark is characterized by its permeability, and can be distinguished from fakes by using a transparent liquid ( e. g. water ), colored pen or chemical reagent. the technique has passed the official health safety examination and poses no danger of nuclear irradiation

    用核粒子照射塑料薄膜形成徑跡，再經化學試劑蝕刻和成像技術，得到由微米級微孔組成的圖案.這種圖案具有物質透過特性.用這種方法生產的核徑跡防偽標志，具備核尖端技術不易擴散，製作設備不易得到，產品用其他方法難以偽造，防偽識別簡單、快速、可靠等特點.此種標志已經通過放射性安全檢測，可以用於各種商品（包括食品）的包裝
  8. The cavity above is composed of the wall of cavities and two layers films lies up and down, each of them has a layer of pzt chip. the cavities underside is composed of the wall of cavities, the film and a layer of class. there is circular valves lies in the import and export, and the material of the micropump films and the valves is silicon

    提出了一種雙腔微泵結構設計方案，這種泵分為上下兩個泵腔，上面泵腔由腔壁與上下兩層薄膜圍成，每層薄膜上都有一層pzt片；而下面泵腔則由腔壁與圍成上面泵腔的下層硅薄膜及一層玻璃圍成，出入口處採用環形閥門結構，泵膜和閥片的材料為硅。
  9. To make cds / k4nb6o17 powder on the base of the k4nb6o17 powder which by the courses of ion exchanging, amine intercalation, sulfuration etc. to obtain cds / k4nb6o17 thin film through the same course of making cds / k4nb6o17 powder on the base of k4nb3o17 thin film on the quartz which made by the spin coating and after heat treatment. to make experiments with additives ( na2so3, 0. 1mol / l ) of photocatalytically decomposing water into h2 and o2 to evaluate the photocatalytic activities of the catalyst knb6o17 powder, cds / k4nb6o17 powder, k4nb6o17 film, cds / k4nb6o17 film. the crystalline structures of the midst powder and film productions were investigated by using the x - ray diffraction ( xrd )

    本課題的主要內容是：高溫固相反應合成具有層狀結構的k _ 4nb _ 6o _ （ 17 ）晶體材料，然後以此為母體材料，通過離子交換、層間胺插入、硫化處理等過程制備出cds / h _ 4nb _ 6o _ （ 17 ）粉末形式的光催化材料；通過旋轉塗覆法在石英玻璃基片上制備了k _ 4nb _ 6o _ （ 17 ）薄膜，採用一定的熱處理制度后對薄膜分別進行離子交換、層間胺插入、硫化處理等處理過程制備了cds / h _ 4nb _ 6o _ （ 17 ）薄膜形式的光催化材料。
  10. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  11. The perpendicular anisotropy and in - plane uniaxial anisotropy decrease with increasing film thickness. the oscillatory curve of hres is asymmetrical, which requires an additional term of anisotropy with four - fold symmetry to fit

    4ml后，薄膜形成連續膜，垂直利平面的單軸各向異性隨膜厚的增加而減小，並出現了四度對稱的成份。
  12. Two coating approaches were adopted, one was to do next coating after 550 ? heat - treatment ( called a coating technique ) ; the other was to do next coating after 100 ? drying, the films coated by several times were heated at 550 ? ( calied b coating technique ). xrd, sem, tem and afm were used to characterize the crystallization behavior, orientation and surface morphology of the zno thin films

    運用xrd 、 sem 、 tem以及afm等對所得的樣品進行了分析和研究，結果表明：採用不同的旋塗工藝得到不同的薄膜厚度，而採用每次塗膜形成氧化物膜后再進下一次塗膜的方式能更好的保持zno薄膜的c軸擇優取向生長。
  13. In this work, zno thin films were prepared by sol - gel method on the glass substrate in order to study the influence of the preparation techniques on the crystallization, orientation and morphology of the films. we adopted a two - step heat treatment technique to optimize the micrcjstructure of the films, and subsequently discussed the forming process of the zno thin films

    本論文研究了在載波片和si （ 001 ）上溶膠凝膠旋塗法的制備工藝對薄膜的結晶、取向狀況以及薄膜形貌的影響，探討了溶膠凝膠旋塗法制備的氧化鋅薄膜的形成過程，同時引入兩步熱處理方法來優化薄膜的結構。
  14. The substrates were biased by dc voltage negatively with respect to ground. the films were characterized by infrared spectra and x - ray photoelectron spectroscopy ( xps )

    薄膜成分以紅外吸收譜和x射線光電子能譜標識，薄膜形貌以原子力顯微鏡觀測。
  15. Fes _ 2 ( pyrite ) has been considered as a valuable semiconductor for solar energy conversion and other photoelectrochemical applications since it consists of nontoxic and abundant elements. because of the band gap of about 0. 95ev and the very high light absorption coefficient ( < 700nm 時 ， > 5 10 ~ 5cm ~ - 1 ), it might be suitable for sensitization solar cells and in the form of ultrathin films

    Fes _ 2 （ pyrite ）是一種具有合適禁帶寬度（ e _ g 0 . 95ev ）和較高光吸收系數（ < 700nm時， > 5 10 ~ 5cm ~ - 1 ）的半導體材料，其組元元素儲量十分豐富、無毒，而且在制備太陽能電池時可以以薄膜形式使用，成本較低，與已有半導體材料相比，是一種較有研究價值的太陽能電池材料。
  16. The chemical composition, micro - structure and optical properties and its application of tio2 thin films deposited on k9 glass by using reactive electron - beam evaporation ( reb ) are studied through sem, tem, xps, xrd, spectroscopic ellipsometry ( se ) and uv - vis spectrophotometer in the dissertation, and the progresses of nucleation and growth of thin film are discussed from the point of view of dynamics and thermodynamics so that a structure model of tio _ ( 2 ) thin film is brought forward

    本文採用sem 、 tem 、 xps 、 xrd 、橢圓偏振儀（ se ） 、 uv - vis分光光度計等分析手段系統地研究了電子束反應蒸發方法在k9玻璃上制備tio _ 2薄膜的成分、結構和光學性能以及tio _ 2薄膜在光學多層膜中應用，並開發了膜系設計軟體。文中還從動力學和熱力學角度分析了tio _ 2超薄膜的形核生長過程，得出了tio _ 2薄膜的組織結構模型。
  17. The morphology and structure of ti - dlc films were investigated by high resolution electron microscopy ( hrem ), atomic force microscopy ( afm ), scanning electron microscopy ( sem ) and raman spectroscopy. the mechanical properties were investigated by a mts nano indenter xp system with a berkovich indenter. the ti - dlc film with a titanium content of 27at. %

    利用高分辨電子顯微鏡（ hrem ） 、原子力顯微鏡（ afm ） 、掃描電鏡（ sem ）和拉曼光譜儀等手段分析了沉積ti - dlc薄膜的成分、形貌和結構，使用帶berkovich壓頭的納米壓痕儀（ mtsnanoindenterxp ）測試了薄膜的力學性能。
  18. Methods of testing plastics - rheological properties - polymer dispersions - determination of white point temperature and minimum film - forming temperature

    塑料試驗方法.第7部分:變流性能.方法740c :聚合物懸浮液.白點溫度和最快薄膜形成溫度的測定
  19. Bubbles are then stacked along the edge of the flap up to the corneal surface to complete the flap. the process from start to finish takes approximately 45 seconds

    Intralase程序完成之後，病人需休息約20至30分鐘，待角膜內氣泡吸收角膜薄片形成，再進行激光矯視的程序。
  20. A film formation method for a semiconductor process is arranged to form a thin film on a target substrate by cvd, while supplying a first process gas for film formation and. a second process gas for reacting with the first process gas to a process field accommodating the target substrate

    本發明揭示一種用於半導體製程之薄膜形成方法，其系配置成藉由cvd在目標基板上形成薄膜，同時將用於薄膜形成的第一製程氣體及用於與該第一製程氣體反應的第二製程氣體供應至一容納該目標基板的製程區域。
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