薄膜晶元 的英文怎麼說
中文拼音 [bómójīngyuán]
薄膜晶元
英文
thin film chip-
In this thesis, mainly by fmr, combined with moke and magnetic measurement, systematical studies have been made on the magnetic properties, especially magnetic anisotropy in epitaxial single crystalline fe ultathin films on gaas and inas substrates in polycrystalline thin films and in polycrystalline nife and nifeco patterned films of micron and submicron rectangular elements arrays
本論文以鐵磁共振為主要研究手段，輔助以磁性和磁光測量，對外延于gaas及inas上的不同厚度的單晶fe超薄膜、不同厚度的nife多晶薄膜和電子束光刻的多晶nife和nifeco單層利三明治結構的微米及亞微米矩形單元陣列圖形薄膜的磁性，特別是磁各向異性進行了較為系統的研究。In this paper we put fonvard the method of introducing the light and middling lanthanon into the tb - fe - co magneto - optical materials by taking advantage of the higher saturation magnetization intensity, higher anisotropy and higher magneto - optical effect of light and middling rare - earth. moreover the law and mechanism of how the addition affect the magneto - optical property of the films were discussed
本文是在比較、總結現有關于tbfeco磁光薄膜的理論和背景研究的基礎上，利用輕、中稀土元素的高飽和磁化強度、高磁晶各向異性、高磁光效應的優點，提出在傳統的tbfeco磁光材料中摻入輕、中稀土元素的方法。Synthesis and characterization of a novel photoalignment liquid crystalline polymer
含液晶基元的光控取向薄膜新型材料的制備及初步表徵3, the output linear resolution of the bridge is about to 0. 84 % and has a better property in comparison of some typical mr angular sensors. 4, the output sensitivity of the bridge is about 1. 0667mv / and better than ferrimag angular sensors
4 ，該自旋閥晶元組成的橋路輸出的靈敏度達到了1 . 0667mv ，相對于強磁性薄膜為敏感元件的角度傳感器有了很大的提高。Pure cdte films have high electrical resistivity and are slightly p - type, due to the formation of cd vacancies in the cdte lattice acting as acceptor centers. the sheet resistivity of films are about 1010 ? / ?. the sheet hole concentration is 105 - 6 / cm2 and the hall mobility is about hundreds cm2 / v. s. the structural and electrical properties of cdte films doped te are markedly different from pure cdte films
，面載流子濃度約105 - 6 / cm2 ，載流子遷移率為幾百cm2 / v . s ；摻雜te元素后，薄膜衍射峰強增大，薄膜結構上出現了第二種相成分?六方結構的te ，由衍射峰強判斷該相比例較小，同時cdte薄膜的衍射峰向低角度偏移，晶格< wp = 5 >常數增大。In the early stage of experiment, an in - material thin film manganin gauge was studied. this in situ gauge was manufactured by single - step thin film processing, namely, manganin piezoresistance element was prepared on inorganic substrates such as ceramic, microcrystalline glass, etc by sputtering
在實驗的初期，本文還研究了「在位式」的錳銅薄膜傳感器，即首先在陶瓷或微晶玻璃基板上沉積錳銅敏感元件，然後用粘貼ptfe薄膜的方法完成傳感器的封裝。In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %
按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。The display principle of thin film transistor liquid crystal display module ( tft - lcd module ) and its testing technology are discussed in this thesis
論文分析了薄膜晶體管液晶顯示（ tft - lcd ）模塊的顯示原理及其測試技術，以液晶顯示器件驅動原理為基礎，利用arm晶元構建了tft - lcd模塊測試系統。The technics of two kinds of thin film gas sensors made by powder sputtering are introduced. the structure and the experimental results of basic parameters are given in this paper
摘要介紹了用粉末濺射做出的兩種平面薄膜型酒敏元件的工藝、晶元結構和基本參數測試的結果。Modern thin - film transistors typically perform at about half the speed of monocrystalline devices, although the difference is smaller when you compare entire circuits, because components packed in three dimensions need considerably shorter wires
現代薄膜電晶體的操作速度大約只有單晶元件的一半，然而如果拿整個電路的速度來比較，差距卻沒那麼大，這是因為連接三維結構中的元件所需要的導線會短很多。分享友人