薄膜狀析出 的英文怎麼說
中文拼音 [bómózhuàngxīchū]
薄膜狀析出
英文
filmy precipitate-
The n type carrier was provided by interstitial zn atom, and zn / o ratio and crystalline quality of zno thin film effeted its hall mobility. when zno thin film was annealed in the ar ambience, p conduction type was founded in the zno thin film which grew in oxygen enrichment condition. this might be excess oxygen in zno thin film entered interstitial position of crystal lattice ( oi ), and p type carrier was from oi
在ar氣保護下，對富氧條件下生長的zno薄膜的退火后的霍爾測量中發現， zno薄膜呈現p型導電狀態，分析認為，這可能是由於富氧狀態下生長的zno薄膜中過量的o在ar氣保護下退火沒有逸出薄膜，反而進入了zno薄膜的間隙位置，成為正電中心，使zno薄膜呈現p型導電。Determined by dsc. whereafter, the surface micro - morphology of both sides of tini sma thin film deposited on glass was investigated by atomic force microscope ( afm ), and the difference of morphology between the two sides is observed. it has been shown that, in the growing surface of sputtered tini film, the trend of grain to accumulating along the normal direction like a column is clearly observed, and the grain is very loose which resulted in more microcavities, but in the surface facing to glass substrate, grain is so compact that there are hardly microcavities
通過濺射法，在玻璃襯底上淀積了tini薄膜，並在600進行了真空退火， dsc法測得其馬氏體逆相變峰值溫度為75 ，利用原子力顯微鏡，對玻璃基tini形狀記憶合金薄膜的襯底面與生長面進行了表面微觀形貌分析，發現：生長面晶粒呈現出沿薄膜法線方向柱狀堆積的趨勢，晶粒緻密性差，微孔洞多；而襯底面晶粒緻密，幾乎沒有微孔洞存在。A sensing magnetic field and displacement type of giant magneostrictive microdisplacement actuator with the functional of sensing driving magnetic field and microdisplacement is developed, and the design theories and approaches being applicable this type of microdisplacement actuator are pointed out : a circular diaphragm type of flexible construction that acts as integration mechanism of microdisplacement transferring and sensing of giant magnetostrictive microdisplacement actuator is adopted, sheet flexure theory of elasticity mechanics and approach of finite element are applied to design and calculate it, corresponding deflection and analytic formula and distribution curve of stress are given, and the specific achieving approaches of measuring principle and magnetic field sensing function of driving field in giant magnetostricitive rod are pointed out the magnetic field sensing function of the actuator is used to practically measure driving magnetic field of actuator and to obtain the relationship of driving magnetic field and coil current, which is also analyzed and studied
其中，採用圓形膜片式柔性結構作為超磁致伸縮微位移執行器的微位移傳遞、感知一體化機構，應用彈性力學中的薄板彎曲理論、有限元方法對其進行了設計、計算，並給出了相應的撓度和應力解析式及分佈曲線；應用電磁理論給出了超磁致伸縮棒內驅動磁場的測量原理及磁場感知功能的具體實現方法，並利用執行器的磁場感知功能對其驅動磁場進行了實際測量，得出了驅動磁場與線圈電流之間的關系，並對其進行了分析和研究；對執行器內部的電磁路和偏置磁路結構進行了設計計算與實驗研究，為了減小驅動線圈的發熱，對其形狀進行了優化設計。The segregation mechanism of tramp element sn during continuous cooling and isothermal aging and its influence on the hot ductility of low carbon steel are discussed and the brittleness during continuous casting of the sn - doped low carbon steel is forecasted. at a strain rate of 10 - 2s - 1 and a cooling rate of 10 / s, there exists a third ductility trough for both steels at 750
在應變速率和冷卻速率分別為10 ~ （ - 2 ） s和10 s的條件下進行熱模擬拉伸時，兩種試驗鋼均在750時出現由先共析鐵素體沿奧氏體晶界呈薄膜網狀析出所引起的第類脆性谷底。An attempt is made to use the filled function as the modified function approach to apply global optimization to optical thin film problems. it is proved successful when applied to problems such as antireflection coatings and beam spliters. meanwhile, it is also found that when the number of layers is fixed those local minima with less total optical thickness appear to be better. in the realization. needle method are made to explore the impact of local optimization methods used, parameter of these methods, the starting design, the search accuracy of function and the methods of thickness growth
從理論分析來看，由於光學薄膜的特性是由在入射介質那一側的等效導納所確定的， needle方法把等效導納作為狀態變量，把每一層的折射率作為控制變量，運用最優控制的原理計算出在薄膜內部每一個厚度對應的點上折射率改變所引起的評價函數的改變，由此選取改變折射率后評價函數變化最大（評價函數變小）的那一點進行插入。The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy. on the basis of the new concept suggested in this paper, the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following. the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h
本文根據柱狀結構存在各向異性的特點，並根據半導體物理知識，推出光導層光生載流子橫向最大擴散長度（該擴散長度與液晶光閥光導層解析度直接相關）與薄膜橫向和縱向電導率關系的表達式為：由於a - si ： h在al金屬的誘導作用下在不高於250的溫度下即開始晶化，本文對用金屬al誘導非晶硅晶化制備的nc - si a - si ： h薄膜進行研究。分享友人