薄膜現象 的英文怎麼說

中文拼音 [bómóxiànxiàng]
薄膜現象 英文
film phenomenon
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 現 : Ⅰ名詞1 （現在; 此刻） present; now; current; existing 2 （現款） cash; ready money Ⅱ副詞（臨時; ...
  • 薄膜 : thin film; film; diaphragm
  • 現象 : appearance （of things）; phenomenon
  1. Best concentration of ions is 1. 5mol / l and dispersant pvp monomer 0. 8mol / l. spin - coating speed, which affected the quality of limn2o4 film greatly, was also studied. it demonstrated that smooth limn2o4 film without cracks could formed under 2000 rotates / min with the solution cion = 1. 5mol / l, cpvp = 0. 8mol / l, what ’ s more, fewest spin - coating times were needed at that speed

    實驗結果表明:採用離子總濃度溶液為1 . 5mol / l ，聚乙烯吡咯烷酮單元濃度為0 . 8mol / l的溶液旋轉塗覆時，轉速在2000轉/分鐘時最佳，所得到的濕limn204薄膜平整光滑均勻，加熱后無龜裂現象。
  2. Results the major morphologic changes were as follows : histologically, alveolar inflammation and interstitial fibrosis were observed. electron microscopic findings were : 1. alveolar type i cells were degenerated 、 broken - down and desquamated, endothelial cells were swelled, with inter cellular tight junction shortened, alveolar type ii cells hyperplastic, basement membrane thinned and deformed ; 2. alveolar macrophages and interstitial macrophages were hyperplastic ; 3. mast cells were infiltrated and degranulated ; 4. electron - dense deposits were present at alveolar wall ; 5. myofibroblasts 、 fibroblasts 、 collagen and basement membrane like material were hyperplastic

    電鏡觀察可見： （ 1 ） i型肺泡上皮細胞變性、崩解和脫落，內皮細胞腫脹，細胞間緊密連接短小， ii型肺泡上皮細胞增生，基底膜變薄和破壞； （ 2 ）肺泡巨噬細胞、間質巨噬細胞增多； （ 3 ）肥大細胞浸潤並見脫顆粒現象； （ 4 ）肺泡壁電子緻密物沉積； （ 5 ）肌纖維母細胞、纖維母細胞、膠原原纖維及基底膜樣物質增生。
  3. The phenomenon of interference is presented when the x - ray beam hits the thin layer sample at glancing angle, the angles corresponding maximal and minimal intensity of x - ray fluorescence are described when the phenomenon of double - beam interference or multiple - beam interference is occurred

    介紹了掠射x射線與薄膜樣品作用時產生的干涉現象，給出了x射線雙光束干涉和多光束干涉產生極值的條件。
  4. With the aid of baffle movement, a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time. the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films, which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure. such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films, and which are considered to induce the lower - energy electrons to participate in the photoemission

    通過掩膜預處理和擋板轉移技術的配合，利用真空沉積方法首次制備了內場助結構ag - o - cs光電發射薄膜。 ag - o - cs薄膜內場助光電發射特性測試結果表明，該方法能夠有效地實現ag - o - cs薄膜體內電場的加載與表面電極的引出，薄膜光電靈敏度隨內場偏壓的增大而上升。 ag - o - cs薄膜在內場作用下的光電發射增強現象與薄膜體內能帶結構變化低能電子參與光電發射等物理機制有關。
  5. According to the feature that deformation resulted from water absorption and mildew appear mainly on the rabbet surface of ccf, this paper adopts rsst to spray a special waterproof sealant on rabbet surface of ccf, so that the sealant can get into fiberboard to certain extent by means of capillarity and penetration, blockage the holes between fibers and capillary, cut up passage of water and change the properties of soakage and sorption to water in capillarity and fiber. at the same time, solidified sealant can form a compact waterproof pellicle on rabbet surface so as to prevent water and humidity from fiber ' s expansion and mildewing

    針對吸水變形、霉變主要發生在地板企口表面的特徵，採用企口表面全封閉法，在復合強化地板企口表面噴塗特殊的防水封閉劑，使其依靠毛細管作用及滲透作用進入板內一定深度，堵塞木纖維之間的空隙及毛細孔通道，截斷水分傳遞的渠道，並改變毛細孔壁及纖維的表面性質以不利於水的浸潤與吸附，同時其固化后能在企口表面形成一層緻密的憎水薄膜，防止水分、濕氣從企口侵入板內引起木纖維膨脹變形、發霉等現象。
  6. The absorption edges wavelengths and cutoff wavelengths of ceo2 - ti2 ;. complex films are red shift, if compared with pure ce02 films or pure tio2 films

    混合薄膜的吸收邊波長和截止波長大於純ceo _ 2 、 tio _ 2薄膜，並出現明顯的帶尾現象。
  7. Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress

    本文主要研究了典型尺寸的n型金屬誘導橫向結晶多晶硅薄膜晶體管在兩種常見的直流應力偏置下的退化現象:熱載流子退化和自加熱退化。
  8. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。
  9. The x - ray diffraction data indicate that the cnx film structures are amorphous

    在不銹鋼片上的cnx薄膜，雖然沒有剝落現象。
  10. By using the various substrate such as glass, stainless steel, ito < wp = 6 > film and ceremic wafer, we discover that we can deposite the high quality cnx thin film with the high cohesion, high hardness and low friction coefficient on the ceremic substrate

    我們發現在載玻片，不銹鋼片及ito膜玻璃片上沉積的cnx薄膜，由於襯底和膜料的應力差較大，都有薄膜破裂、剝落現象。並且有成膜不均勻現象硬度也較低。
  11. To achieve accurate detection of surface potential, the measurement of the contact potential difference of the zno / si step was also carried out. polarization - related surface properties of ferroelectric thin films were investigated by kelvin probe force microscopy ( kpfm ), leading to the discovery of asymmetric charge writing on the surface of pb ( zr _ ( 0. 55 ) ti _ ( 0. 45 ) ) o _ 3 ( pzt ) thin film

    為了優化儀器的檢測靈敏度和穩定性，選用氧化鋅薄膜上的zno / si臺階作為測試對象，檢測了zno / si的接觸電勢差;通過改變儀器系統參數，發現針尖-樣品距離和掃描速度對接觸電勢差的檢測結果影響顯著。
  12. Fractal phenomenon during fabricating ultrthin silicon membrane using etching - stop

    硅腐蝕停止技術制備超薄硅膜中的分形現象
  13. The testing and analysis data of infrared spectrum and raman spectrum provide valuable experimental data for thorough study of the microcosmic structure of silver - doped films and theoretical in the future

    制備和提純工藝是可靠而且高效的;根據對摻雜薄膜紫外譜線的特徵峰紅移現象的仔細分析，確定了低摻雜薄膜c6 。
  14. In order to obtain similar deposition condition, very different bias must be applied to the substrate when the grounding of the arc source is different. at last, carbon films were deposited and their properties were measured

    分析了這種現象產生的原因以及不同接地方式對沉積薄膜的影響，即當弧源接地狀態不同時，要獲得相似的沉積條件，給基片臺施加的負偏壓應有所不同。
  15. The cmr materials have complex physical properties. some phenomena of the lacamno3 films are discussed, such as the effects of mismatch between the substrates and the films, the variation of the resistance of films under different bias currents. and the effects and improvements are discussed with details after the films are annealed in high temperature and high oxygen pressure

    超巨磁電阻材料有著復雜的物理性質，我們對lacamno _ 3薄膜材料所表現出來的一些現象進行了討論，如應力變化對薄膜性質的影響、不同偏置電流與薄膜電阻變化的關系等，還特別討論了薄膜在高溫、高氧壓環境中退火所帶來的影響以及薄膜性質的改善。
  16. The ultra - thin er layers with the thicanesses in the range of 0. 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system. after annealing at lower temperatures, ordered simcfores form on the surface. the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )

    本文是關于硅（ 001 ）襯底與電子束淀積的鉺、鉿原子反應形成的超薄膜的界面與表面性質的研究，以及在該襯底上出現的共振光電子發射現象，包括了以下四個方面的工作： 1鉺導致的硅（ 001 ）襯底上的（ 4 2 ）再構研究利用反射高能電子衍射和低能電子衍射，在室溫淀積了0
  17. Based on the theory of glow discharge, the angle distribution of electron and the recombination process are simulated by adopting monte carlo method. the doping process of n - type diamond film is investigated by this method for the first time. the results indicate : 1 ) the scattering angle of electrons near the substrate is mainly lange - angle, which is helpful to grow diamond film over a large area when glow discharge is kept ; 2 ) after considering the recombination process, the number of particles distribution is provided

    主要結果如下： （ 1 ）研究了電子在雪崩碰撞和分解電離后的角分佈情況，結果表明基片附近電子的散射以大角散射為主，在維持輝光放電的條件下，較高的偏壓和工作氣壓對金剛石的橫向連續成膜是有益的； （ 2 ）考慮了低溫合成金剛石薄膜過程中電子與各種碎片粒子的復合過程，給出了不同的復合系數情況下的粒子數分佈，結果顯示各種碎片粒子的分佈隨復合系數的變化會出現粒子數分佈的漲落現象。
  18. At the s ame time, an exceptional structure has been found in the sample annealed for one hour at 800. it appears the single crystal lattice irradiated by high - energy electron beam within a few seconds and then becomes amorphous structure quickly

    同時在800退火1小時的薄膜中發現一種異常結構，在短時間高能電子束照射下呈現明晰的單晶衍射斑點，但時間一長，非晶化現象嚴重。
  19. The photoluminescence of the thin films without post heating shows that the increasing of the deposit temperature decreases the pl intensity. only the sample deposited at 450 has one evident luminescence band found nearby 523. 2nm

    對復合鑲嵌薄膜光致發光特性的研究發現，在450沉積未經過退火處理的薄膜樣品中觀察到室溫光致發光現象，在523 . 2nm附近有一強的發光譜帶。
  20. Quantum confinement effect was observed in the films by measurements of absorption spectrum of ge - sio2 films. the widening of optical band gap of the amorphous films seems to be related to the function of the quantum confinement on the impurities or defects in the films

    光吸收特性研究表明，因量子限域效應，對于ge - sio _ 2薄膜觀察到較強的光吸收和光吸收邊隨ge顆粒尺寸變小而藍移的現象。
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