蝕刻線 的英文怎麼說

中文拼音 [shíkèxiàn]
蝕刻線 英文
line of etch
  • 蝕 : Ⅰ動詞1. （損失; 虧耗） lose 2. （腐蝕） erode; corrode Ⅱ名詞（天體現象） eclipse
  • 線 : 名詞1 （用絲、棉、金屬等製成的細長的東西） thread; string; wire 2 [數學] （一個點任意移動所構成的...
  • 蝕刻 : [電學] [冶金學] etch; etching
  1. According to whether there are later tectonic activities or not it can be divided into mountain planation surface, lower planation surface and buried planation surface. according to active condition, it can be divided into active surface, dormant surface, exotic surface and defunct surface. taking the base level into consideration, it can be divided into sea - eroded and deposited planation surface, denudated planation surface, snowline planation surface and upper eroded planation surface

    依據夷平面形成后是否遭到後期構造變動將夷平面分為山地夷平面、原地夷平面和埋藏夷平面；依據夷平面的活動狀態可分為活動面、休眠面、外來面和廢止面；依據侵蝕基準面可分為海蝕-堆積夷平面、剝蝕夷平面、雪線夷平面和上部剝蝕夷平面；依據基底可分為穩定地帶上的夷平面和活動地帶上的夷平面；依據氣候帶可分為準平原、山麓面和聯合山麓面、雙層水平面和刻蝕平原、凍融山足面和凍融剝夷平原。
  2. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。
  3. In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask

    在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。
  4. With metal fatigue in material mechanics, this paper deduces the limestone fatigue curve of longmen grottoes by means of marble s one within the error permission. by the experiment elects the crucial factors of current vibration environment in longmen grottoes, the author contrasts the result of the experiment with its fatigue curve referred above and analyses the fatigue effect of longmen grottoes. finally, it is pointed out that after longmen grottoes have being suffered weathering and water - erosion more than 1500 years, the vibration environment is becoming an crucial factor leads to fatigue effect, especially in those weak surface carvings just like the crossings of several rifts, serious weathering places, etc

    借鑒材料力學中金屬疲勞破壞的研究手段，在誤差允許范圍內用大理巖疲勞曲線推導出門石窟石灰巖疲勞曲線。通過對石窟實際振動環境中典型要素的抽取和振動試驗，將試驗結果與疲勞曲線進行對比，分析了門石窟的疲勞破壞效應。文章指出，在經歷了1500多年的風化和流水溶蝕后，振動環境已成為導致門石窟某些薄弱點如多條裂隙交叉點嚴重風化酥解的壁面雕刻品等產生疲勞破壞的重要誘發因素。
  5. The company has cad design centre, precision etching and developing production line, chemical cleaning production line, scrubbing production line, high - power exposing machine, cnc drilling machine, suctioning silk screen machine, speedy press, vacuum multilayer press, chemistry sink copper and metal surface treating production line, punches, etc. import or domestic advanced equipment

    公司擁有cad設計中心，精密蝕刻、顯影生產線，化學清洗生產線，磨板生產線，大功率曝光機，數控鉆床，吸氣絲印機，快壓機，真空層壓機，化學沉銅及金屬表面處理生產線，沖床等進口或國產先進設備。
  6. Analyzing the treated yak hairs with sem, xps and et al, it showed under the same conditions, the effect of etching is enhanced with the increasing of power of wave, and the hydrophilicity and dyeing rate enhanced obviously

    通過sem 、 xps及吸附性能等的分析，結果表明，在相同參數的等離子體條件下，隨著產生等離子體的微波功率的增大，對氂牛毛纖維表面的刻蝕效果增強；經過等離子體處理過的氂牛毛纖維的親水性，上染率等都有明顯的提高，說明該方法是一條切實可行的路線。
  7. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  8. This paper discusses the surface etching of polyester thread through application of plasma and alkali deweighting to enhance the size adhesion to polyester thread and improve the abrasion - resistance of the sized polyester thread

    摘要探索了應用堿減量、低溫等離子體處理方法對滌綸股線表面進行刻蝕處理，以改善上漿前滌綸表面界面，增強漿液對滌綸股線的黏附性，提高上漿后滌綸股線的耐磨性的研究。
  9. A set of icp etching system has been designed and manufactured through the analysis of the probe diagnosed results. during the study of the system, the emphasis is laid on the matching problem of icp coupled antenna via the rf matching device and rf power source

    通過對探針診斷結果的分析，設計並製作一套icp刻蝕系統，重點研究icp耦合天線通過射頻匹配器與射頻功率源的匹配問題，得到很好的匹配效果，在射頻輸出功率為500w以內時，反射功率小於10w 。
  10. The lithographic and etching process for a membrane creates a mesh of metal wires with silicon dioxide filling the space between them

    薄膜先以微影及蝕刻製程製作出金屬線路，線路之間則填入二氧化矽。
  11. Xxx current production exhibits minor seeding ( metal deposits ( gold color ) in scribe lines ), which is due to batch processing of plating process due to significantly lower volumes and breaks in ordering

    該公司目前產量小幅增加（蝕刻生產線的金黃色金屬沉澱物） ，由於整理量與斷裂品大減，導致電鍍過程可採用批次加工法。
  12. Depending on how long a single piece of foil is utilized - in attempts to block the pulsing microwave energy - will determine how many lines are etched in the foil

    這取決於一個單張的金屬箔被用了多久-在試圖組織微波的脈沖能量-這將決定了有多少條線將被蝕刻在金屬箔上。
  13. Generally, the etching rate for different local surface is dependent of the local slope of the surface. in this paper, we call this < wp = 6 > phenomena quasi - direction effect. to reduce the difficulty, we use a mathematical model for the surface shape analysis in this paper

    為了減小分析的難度，本論文採用了一個有效的數學模型，分析了在刻蝕工藝中基底自身面形輪廓的曲線形狀對基底局部區域的刻蝕速率產生的影響，我們稱這種影響為準單向刻蝕效應，並通過對數學模型的理論分析和計算機模擬得出受此影響而產生的面形形狀，並將結果與實驗進行對比。
  14. The reciprocal space map of x - ray difll - action for quantum - wires is simulated successfully. abundant structural intbrmation such as array period, geometric shape, etching depth and strain state, etc. for quantum wires are obtained

    模擬了量于線x射線衍射的二三維圖，得到更為豐富的樣品結構信息，例如周期，形狀，刻蝕深度，應變等。
  15. Responsible for implant / diffusion / etch / photo new process development, process in - line control and development

    負責注入/擴散/刻蝕/光刻新工藝的開發及在線控制。
  16. The diffraction efficiency of phase mask is discussed by using rigorous coupled - wave theory. the results are useful for fabrication of phase mask. and the diffraction efficiency of linearly chirped phase mask is discussed, it presents require of ion - beam etching

    利用嚴格耦合波理論對光纖光柵相位掩模的衍射效率問題進行了深入研究，以達到指導光纖光柵相位掩模實際製作的目的，並且研究了啁啾掩模的衍射效率問題，為線性啁啾光刻膠掩模的離子束刻蝕提出了要求。
  17. Otherwise, the thinner mask thickness or larger etching width is, the higher etching velocity and larger depth raise

    比較小的掩膜厚度和大的刻蝕線寬都有利於刻蝕的速度和深度。
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