表面摻雜 的英文怎麼說

中文拼音 [biǎomiànchānzá]
表面摻雜 英文
surface doping
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 表面 : surface; superficies; boundary; face; rind; sheet; skin; outside; appearance
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. In this dissertation, refining grains, depositing conductibility carbon film on the surface of the particles and doping mg ~ ( 2 + ) into the lattice of lifepo4 were adopted to improve the electro - chemical performance of the cathode material. the cathode material lifepo4 mainly has two flaws, the low conductibility and the slow li + ion diffusion, which have a bad influence on the performance of the cathode material

    論文主要針對制約正極材料lifepo _ 4性能的兩大致命的缺點，即低的電子導電率和低的鋰離子擴散速率，採取材料顆粒的細化、顆粒表面沉積碳導電層以及mg ~ （ ~ （ 2 + ） ）離子摻雜等措施對其進行改性探索，以提高正極材料lifepo _ 4的電化學性能。
  2. The structures and characteristics of several graphite samples are measured by means of powder x - ray diffraction ( xrd ), brunauer - emmer - teller ( bet ) surface area measurement, inductively coupled plasma ( icp ) spectroscopy, particle size analysis and electrochemical measurements. the effects of origin, structure, impurity, particle size, specific surface area of carbon materials on the electrochemical characteristics are studied. a synthetic graphite with abundant resources, low cost and favorable performance is determined as the raw material for modification of graphite

    採用xrd 、 bet 、 icp 、激光粒徑分析及電化學性能測試等方法，對國內外多種典型石墨樣品的結構與性能進行比較，研究石墨材料的來源、晶體結構、雜質含量、顆粒大小、比表面積等因素對其充放電性能的影響，確定一種性能較好、價格低廉、來源廣泛的普通人造石墨粉作為熱處理與摻雜改性、以及復合結構炭材料研究的原材料。
  3. During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss

    在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。
  4. From then on, the above two shortcomings had been overcome. impurity concentration and junction depth can be accurately controlled and freely adjusted. both low and high dopant concentration can be gained easily, and ideal distribution of ga in si can also be achieved with uniform surface concentration, good repeatability and high eligibility and excellence ratio, which have greatly improved comprehensive performances of the devices

    此工藝發明以來，克服了上述兩者的弊端，雜質濃度和結深能準確控制而又能任意調整，可進行低、高濃度階段性摻雜，得到元素ga在si中的理想分佈，而且表面濃度均勻一致、重復性好、合格率和優品率高，改善和提高了器件的綜合性能。
  5. We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism

    我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。
  6. It was revealed that the hexagonal order was destroyed and the phase transition from hexagonal to amorphous structure with the increment of manganese ion, and with the appropriate neutral hexadecylamine ( hda ) with cetyltrimethylammonium bromide ( ctab ) as mixed template, mn - mcm - 41 was synthesized with well uniformly pore size and hexagonal mesostructure for the additional function of n - metal covalent bond, and the ordered structure was mediated by the influence on the packing parameter

    表明隨著mn ~ （ 2 + ）引入量的增加，導致介孔長程有序結構的破壞，最終引起由六方相向無定型相的轉變。適量中性表面活性劑十六胺的引入以形成混合模板劑，通過在原有靜電作用基礎上增加n -金屬鍵作用，合成結構較為完整的錳摻雜mcm - 41材料。
  7. We fully utilized the characteristics of the deficient electron structure ( carbon sp3 and boron ) and easy oxidation introducing - oh on bdd electrode surface to preparation of biosensors, which were used to investigate the electrochemistry of biological molecules and be rapid, sensitive

    利用bdd電極的表面缺電子結構（ sp3雜化碳和摻雜的硼）和易於氧化引入- oh的特點，在氧化或未氧化的bdd電極表面修飾化學/生物物質製成化學/生物傳感器，研究生物分子在電極表面的電化學特性，並實現對生物分子的準確、快速、靈敏、簡便測定。
  8. Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity. the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained. the crystalline silicon solar cell spectral response, contact resistance and minority carrier lifetime measurement systems were established

    鈍化機理研究獲得了表面復合對不同表面摻雜濃度晶體硅太陽電池性能的影響、表面和界面復合速度的理論表達式；研究得到了減反射膜對太陽電池短路電流增量比的極限；建立了太陽電池光譜響應、柵線電極接觸電阻和少子壽命等測試系統。
  9. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  10. Moreover, the two - step heat treatment method was utilized in the preparation of the films, the films prepared by the first coating with 550 ? heat - treatment and the second coating with of with 500 ? heat - treatment ( b type films ) were highly c - axis oriented with smooth, dense and uniform surface morphology

    此外，結合高溫和低溫熱處理方法優點的兩步熱處理法得到的b型薄膜同時具有較好的c軸擇優取向性和更為平整均勻的表面形貌。另外，在硅基板上也制備出了良好的c軸擇優取向性的摻雜氧化鋅薄膜。
  11. The significant capacity loss of the spinel limn2o4 during cycling hereby prevents its wider use as cathode materials for lithium secondary batteries. there are two main factors resulting in fading capacity and poor cyclability, one is the jahn - teller distortion of mn3 +, and the other is mn dissolution to electrolyte. the main objects of this paper are to resolved these key problems effecting on the performance of batteries

    針對limn _ 2o _ 4正極材料在電化學循環過程中發生jahn - teller畸變和mn在電解液中溶解這兩個導致容量衰減和循環性能劣化的關鍵問題，分別採用陰陽離子復合摻雜和尖晶石晶粒表面包裹兩種措施，對尖晶石結構limn _ 2o _ 4正極材料進行了改性研究。
  12. Surface chemical analysis - secondary ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials

    表面化學分析.次級離子質譜法.利用均勻摻雜材料測定硅中硼原子濃度
  13. Mechanical properties of ultrathin diamond - like films and the effects of surfaces and dopants

    金剛石類超薄膜的力學性能和表面性質與摻雜劑對它的影響
  14. In this thesis, three systems, namely, perfect and defect sno _ 2 ( 110 ) surfaces, ti and ru - doped surfaces and the adsorptions of small molecules on above perfect surfaces have been studied in details by using the first - principles method with the combination of pseudopotential plane - wave and atomic basis sets. the structural stability, surface states and the surface chemistry of undoped and metal doped sno _ 2 ( 110 ) surfaces have been discussed, which can provide the theoretical rules to improve the surface properties of this special functional material

    為了深入了解sno _ 2表面的電子結構本質及其化學反應性質，本論文採用贗勢平面波和原子軌道基組相結合的第一性原理方法，詳細考察了三種類型體系，即sno _ 2 （ 110 ）完整和缺陷表面、 ti和ru摻雜表面、以及典型小分子在上述完整表面的吸附，揭示了sno _ 2 （ 110 ）及其金屬摻雜表面的構型穩定性、表面態及其對表面化學反應性的影響，為該類型表面功能材料的改性提供理論依據。
  15. Moreover, we observed the concentration profiles of the ion - implanted samples and the diffused samples by c - v method, and discovered that the carrier concentration decreased with increasing of the diffusion depth. whereas, the peak concentration of the ion - implanted samples located at 0. 248151 u m beneath the surface and the peak concentration of the diffused samples located at the surface. furthermore, the carrier concentration of mnas source diffused sample as high as 102 % m3can be obtained, and the surface was much smoother compared with that of the pure mn source diffused sample

    發現兩種摻雜方法的載流子濃度大體上都是隨著擴散深度的增加而下降，不同的是離子注入樣品的載流子最高濃度處于離表面深度0 . 248151 m處，而擴散樣品的載流子最高濃度處于表面，並摻錳（ mn ）砷化鋅（ gaas ）材料性質的研究且還發現相對于純mn源擴散樣品來說， mnas源擴散樣品的表面較為光滑，且表面載流子濃度高達1020 cm 』數量級。
  16. For ti doped surface, in most cases, the doping states

    對于未摻雜表面，吸附氫后，表層橋氧原子將缺失。
  17. The main results of this study are summarized as folio wings : firstly, the effect of rare earth - doped catalyst to the synthesis of carbon nanotubes was systemic studied ; the vary of morphology and content of catalyst in the catalysis synthesis process of carbon nanotubes was also deeply investigated, which is helpful to the understanding of carbon nanotube growth mechanism

    本文利用cvd和熔劑法及直接氧化法在合成和表徵碳納米管、硼基納米材料及其他若干材料等方面做了以下初步的探討： （ 1 ）系統研究了稀土摻雜催化劑對碳納米管生長的影響及催化合成碳納米管過程中催化劑形貌和成份的變化，加深對碳納米管生長機制的理解。
  18. In terms of the unstability of it, we take dopping and coating measures to restrain it. the dopping elements include cr, al, co and ni, and licoo2 is used as the coating material. through xrd ananysis, we can know only dopping al can form limno2, the product of coating licoo2 forms the main phase limn2o4 although liniv04 has high voltage as cathode materials, it is difficult to ni3 + from ni2 +, which makes it hard in the first charge

    基於limno :結構的不穩定性（在充放電過程中會不可逆的轉變為類尖晶石limnzo4結構） ，對lin [ n02進行摻雜、表面包覆改性實驗研究，通過對limnoz進行摻鉻、摻鋁、摻鉆、摻鎳等元素，從xrd物相分析可以看出:只有摻入鋁能形成limnoz :用licooz進行包覆得到是以limnzo4為主相的混合物。
  19. At last tcnq and snpc films as well as poly ( metheyl methacrylate ) ( pmma ) films doped by tcnq and snpc were prepared by spin coating method. the influence of different spin speeds on the sensitivity of organic film was studied

    最後本文採用旋塗法制備tcnq和酞菁錫兩種材料的敏感薄膜，並用這兩種材料對pmma （聚甲基丙烯酸甲酯）進行了摻雜，運用sem觀察了薄膜表面形貌。
  20. Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively

    利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。
分享友人
分享到 Line

分享到臉書