表面離子密度 的英文怎麼說

中文拼音 [biǎomiànlízimìdù]
表面離子密度 英文
surface ion density
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 密 : Ⅰ名詞1 （秘密） secret 2 [紡織] （密度） density 3 （姓氏） a surname Ⅱ形容詞1 （距離近; 空隙小）...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 表面 : surface; superficies; boundary; face; rind; sheet; skin; outside; appearance
  • 離子 : [物理學] ion
  1. The method of obtaining high concentration of na2feo4 solution by quick electrolysis mainly contains four aspects : adoption of either a diaphragm or an ionic membrane electrolytic cell in which a thin anodic cell lying between the two cathodes, ( 2 ) using an iron anode that has larger specific surface area, ( 3 ) keeping suitable concentration of naoh in the anodic cell, adoption of lower current density and higher electrolyzing speed. the practical technique parameters follow a s below : the naoh solution of 14 - 16mol / l, the temperature of 303 - 308k, the surface anodic current density of 300a / m2, the unit electrolyzing speed of efficiency larger than 6. 0a / l

    快速電解獲取高濃度na _ 2feo _ 4溶液的方法，主要包括四個方面：採用兩陰極室夾一厚度較小的陽極室的隔膜（或離子膜）電解槽；使用比表面積較大的鐵網陽極；保持陽極室中有適宜濃度的濃naoh溶液；採用較低的電流密度和較高的電解速度。具體工藝參數是： 14 16mol / lnaoh溶液、溫度303 308k 、表觀陽極電流密度300a m ~ 2 、有效單位電解速度6 . 0a / l 。
  2. In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask

    在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。
  3. The absorption spectra indicate that the adsorption of dithiooxamide on the silver nanoparticles results in a red - shift in the spr band, mainly caused by the changes in the microenvironment of the metal nanoparticles and charge density alteration due to the charge transfer between the molecules and metal particles

    吸收光譜結果表明銀納米粒子表面吸附二硫代乙二酰胺分子可導致金屬粒子的表面等離子體共振吸收紅移，主要與金屬粒子的微環境改變以及吸附分子與金屬間電荷轉移而導致的金屬粒子內部電子密度改變有關。
  4. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  5. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
  6. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  7. A comparison of the optical and mechanical performance is made between with iad and without iad. the optical performances include the refractive index the extinction coefficient the packing density the vaccum - to - air shift and the afm images of the surface ; the mechanical performances include the adhesion and the hardness

    光學特性涉及折射率、消光系數、波長漂移、聚集密度和表面粗糙度，機械特性涉及硬度和附著力。通過研究，發現離子輔助沉積對單層薄膜的光學特性和機械特性均有明顯改善。
  8. In the hipib strengthening experiments, samples of high - speed steel ( w6mo5cr4v2 ) were irradiated by abstract hipib ( cn + = 30 %, h + = 70 %, ion energy 250 kev, ion current density 60 - 180a / cm2, pulse duration 80 - 100 ns ). microstructure investigation and properties characterization of the treated hss samples were carried out to investigate the effect of current density and pulse number of incident hipib on the surface modification treatment. the physical mechanism of the hipib - solid interaction was established based on the experiments

    在hipib轟擊材料表面方面，本文選擇成分由c ~ （ n + ） （ 30 ）和h ~ + （ 70 ）組成、加速電壓為250kv 、脈沖寬度為80 100ns的hipib對高速鋼（ w6mo5cr4v2 ）進行表面輻照處理，研究離子束流密度和脈沖次數對高速鋼微觀結構和宏觀性能的影響，探討了hipib與材料表面相互作用的物理機制。
  9. The second population is pulled forwards by the propagating energetic electrons. the third energetic ion population emerg

    研究了前、后表面等離子體密度標長對高能離子產生的影響。
  10. Standard practice for approximate determination of current density of large - diameter ion beams for sputter depth profiling of solid surfaces

    固體表面濺射深度仿形加工用大直徑離子束的電流密度近似測定的標準規程
  11. Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively

    利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。
  12. The gas sources that we used are trimethylgallium ( tmg ) and 99. 9999 % purity nitrogen, which were fed into reaction chamber and resonance cavity respectively. the highly dense ecr plasma up to 1011cm - 3 was created in the resonance cavity and introduced to the next reaction chamber by the force of divergent magnetic field. consequently, gan thin film was grew on the substrate sapphire ( 0001 ) placed in the downstream

    實驗採用有機金屬三甲基鎵氣源（ tmg ）和99 . 9999純度的氮氣，在ecr - pecvd150裝置共振腔內電子迴旋共振吸收微波能量產生的高密度ecr等離子體在磁場梯度和等離子體密度梯度的作用下向下級反應室擴散，在放置於下游區樣品臺上的- al _ 2o _ 3襯底表面附近發生物理化學反應沉積成gan薄膜。
  13. Moreover, the longitudinal piece is higher twist ( suppressed by a factor i / a / 2 ). the dipole cross section is largely unknown, only at small distance p it can be expressed in terms of gluon density

    偶極截面只有在小距離時才能表示成膠子密度的函數，在整個范圍內求解偶極截面，需要解非常復雜的演化方程，目前是不能做到的。
  14. The spectral lines emitted from these species can be used to determine the sample composition. the wavelengths observed are characteristic of the individual elements present in the sample, and their intensities are related to the concentration of the corresponding species in the sample

    高功率密度的激光使樣品表面汽化，產生處于激發態的原子和離子，而激發態原子和離子的發射譜線可用於樣品成分的鑒定，發射譜線的強度與該原子對應的元素在樣品中的含量有關。
  15. It is found that the ablated surface morphologies for both the ti samples of different roughness have a similar change trend from roughening to smoothing with increasing the shot number, where the surface roughening is relatively weaker at lower ion current density

    通過輻照不同原始粗糙度的純金屬ti發現，隨著輻照次數的增加，燒蝕表面形貌均發生表面粗糙化向光滑化的轉變。離子束流密度較低時，輻照表面的粗糙化程度較弱。
  16. It has discovered for the first time that the precursor b - ni1 - xcox ( oh ) 2, with pluffy and dendritic morphology, high specific surface area and low tap density, is the best starting material to produce lini1 - xcoxo2 materials, but not the presently thought that high density and spherical particle of ni ( oh ) 2 is fitting for the preparation of ni - cathode materials. using our own precursor can greatly reduce the degree of cation mixing ; improve the electrochemical properties of the aimed materials

    發現表面蓬鬆、比表面積高和密度低、呈枝晶狀排列的- ni _ （ 1 - x ） co _ x （ oh ） _ 2前驅體具有較高的化學活性，制得的目標材料可有效抑制陽離子混排產物的生成，而非目前廣泛認為的高密度球形ni （ oh ） _ 2適合作鎳系正極材料的前驅體。
  17. The investigation on the powerful laser induced micro - plasma by the radiation focused on a solid surface plays an important role in super - conduct films, nanometer materials, laser isotope separations, medicine, biology, and other industrial applications

    對高功率密度激光輻照固體表面形成激光微等離子體的研究，在研製超導薄膜，納米材料，同位素分離，醫學，生物學，以及其他工業應用方面有重要的理論指導意義和廣泛的應用前景。
  18. The theoretical calculations and the experiments suggest that, double pre - ionization has an obvious advantage for increasing the initial electron density between the main electrodes

    理論計算與實驗表明，雙預電離在提高主電極間初始電子密度方面存在著明顯的優越性。
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