襯底材料 的英文怎麼說

中文拼音 [chèndecáiliào]
襯底材料 英文
backing material
  • 襯 : Ⅰ動詞1 （在裏面托上一層） line; place sth underneath 2 （陪襯; 襯托） set off Ⅱ名詞（襯在裏面的附...
  • 底 : 底助詞（用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」）
  • 材 : 名詞1 （木料） timber 2 （泛指可以直接製成成品的東西; 材料） material 3 （供寫作或參考的資料） ma...
  • 料 : 名詞1 （材料; 原料） material; stuff 2 （喂牲口用的穀物） feed; fodder 3 （料器） glassware 4 （...
  • 材料 : 1. （原料） material 2. （資料） data; material 3. （適于做某種事的人才） makings; stuff
  1. Testing method of wettability of glass substrate

    玻璃襯底材料濕潤度的試驗方法
  2. With the development of fiber - optic communication systems and fiber - optic sensors, the linbo _ 3 integrated optical intensity modulators consisting of m - z optical waveguide and cpw modulation electrode structure get an extensively application

    隨著光纖通信與光纖傳感的發展，以linbo _ 3為襯底材料、以m - z干涉儀為光波導結構、採用共面行波電極（ cpw ）為調制電極的集成光學強度調制器得到了越來越廣泛的應用。
  3. As far the trend of fiber - optic communication systems is to obtain higher capacity, and higher transmission speed. the intensity modulator is widely applied to a lot of fields. it is necessary for the intensity modulator subject to the laser pulse rectification systems that should be provided with following performances as high speed signal transmission and quick response and so on

    光纖通信向著大容量、高速寬帶方向發展，光纖延遲線系統要求強度調制器具有高速信號傳輸、快速響應的特點，因此以linbo _ 3為襯底材料的集成光學強度調制器具有十分良好的應用前景。
  4. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  5. Usually, gaas is employed as substrate for the growth of wide band - gap ii - vi semiconductors due to their similarities in lattice constant. however, as a mature semiconductor material, si has serves electronics greatly

    以往的寬帶-族半導體都是以gaas為襯底材料的，這就造成了寬帶-族半導體光電子材料與si基微電子技術的分離。
  6. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  7. Standard guide for characterization and testing of substrate materials for tissue - engineered medical products

    組織工程醫療產品用襯底材料特徵描述和試驗的標準指南
  8. The influence of substrate materials on properies of primary diamond like carbon films prepared by direct photo chemical vapor deposition method

    襯底材料對直接光化學汽相淀積類金剛石碳膜成膜初期的影響
  9. Films properties are related with the substrate. so we select linbo3 as the substrate to invest the correlation between zno films and different substrates

    為研究不同襯底對薄膜zno質量和生長工藝的影響，選擇了在自製的linbo3作為生長zno薄膜的襯底材料。
  10. Xps of the films indicates that tisi2 interlayer can prevent the interaction between substrate material and diamond interface, so that the adhesion of diamond film is improved

    薄膜的xps表明tisi _ 2作為中間層能起到阻止襯底材料與金剛石的界面反應作用，提高了金剛石薄膜的附著性。
  11. Liquid encapsulated czochralski ( lec ) si - gaas is widely used in the microwave device and the substrates of high speed digital optic - electronic integrated circuits, and it has become one of major materials in information industry

    液封直拉法生產的半絕緣砷化鎵單晶（ lecsi - gaas ）被廣泛用於微波器件和高頻集成電路的襯底材料，成為當代信息產業的重要材料之一。
  12. So the application prospects of linbo _ 3 integrated optic intensity modulators are getting better. the linbo _ 3 integrated optical intensity modulators consisting of m - z optical waveguide and cpw modulation electrode structure is presented in this thesis

    本課題旨在研究以linbo _ 3為襯底材料、以m - z干涉型光波導結構為基礎、以cpw行波電極為調制電極的集成光學強度調制器。
  13. Because linbo _ 3 material have the characteristics such as good electro - optic, short electro - optic time response and high transnissivity, it is suitable substrate material used as manufacturing low loss waveguid device and has broad application prospects

    由於linbo _ 3材料具有良好的電光效應、較短的電光響應時間和高透射率特性，因而適宜製作低損耗導波器件的襯底材料，應用前景廣闊。
  14. In this thesis, the research work of a new type multifunction integrated optical circuit device ( mioc ) used in singal processing of ifog is described through parameter theoretical design and technological process. its working wavelength is 1. 3 m

    本文基於linbo _ 3襯底材料，從參數理論設計和工藝設計方面介紹了一種用於干涉型光纖陀螺（ ifog ）信號處理的新型多功能集成光路器件（ mioc ）的研製工作。
  15. It also has short protection and voltage overshot protection block. devices and ics based on esoi have the advantages of not only cheaper substrate, good performance of soi technology, but also obtaining a certain breakdown voltage and optimization of self - heating effect

    基於esoi的器件及集成電路不僅襯底材料制備工藝簡單，硅層厚度均勻性好，器件及電路特性具有soi結構的優點，而且還兼顧一定的耐壓，對自加熱效應也得到優化。
  16. Fill the bottom of the new shipping container with at least three - inches ( 7. 62 cm ) of foam - in - place, polyethylene corner or edge pads, inflatable packaging, loosefill peanuts or other suitable dunnage material

    在新運輸容器的底部填充至少三英寸（ 7 . 62厘米）厚的現場發泡、聚乙烯稜角或邊沿襯墊材料、充氣式包裝、疏鬆填充顆粒或其它適用的襯墊材料。
  17. So the application prospects of linbo _ 3 integrated optic intensity modulators are getting better. two - section cascaded ln intensity modulator applied to laser pulse rectification is presented in this thesis. it is constituted with two - section m - z optical waveguide and cpw traveling - wave modulation electrode

    本課題旨在研究以linbo _ 3為襯底材料、以兩級串聯m - z干涉型光波導結構為基礎、以cpw行波電極為調制電極、用於核爆模擬領域激光脈沖整形的集成光學強度調制器。
  18. The demand of the wafer ' s quality become higher too. the result of the final polishing determines the quality of silicon substrate for the final polishing is the last step in the polishing. in this paper, the mechanism and dynamics process of silicon polishing are systematically analyzed

    隨著集成電路向著甚大規模集成電路（ ulsi ）日新月異的發展，作為襯底材料的硅單晶片的尺寸越來越大，特徵尺寸也不斷減小，對硅襯底拋光片的拋光質量的要求也越來越高。
  19. Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic

    以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。
  20. In this paper, accordiflg to the working pri nci p1es of devi cg, we design the struc ture narameter of device, and then the hexagona1 and cubic gan epitaxial layers were grown. on sapp1re and gaas substrates respect ive1y. as a resu1 t, we have fabricated gan - - based msm uv photodetectors, the responsi vity of device reach 0

    本文依據msm結構探測器的工作原理，設計了器件的結構參數，並分別以藍寶石和gaas為襯底材料生長了六方結構和四方結構的gan材料，在此基礎上制備出gan - msm紫外光探測器，並取得了一些有意義的結果，我們的器件光響應度最好可達0 . 21a w 。
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