襯膜組織 的英文怎麼說

中文拼音 [chènmózǔzhī]
襯膜組織 英文
lining-membrane tissue
  • 襯 : Ⅰ動詞1 （在裏面托上一層） line; place sth underneath 2 （陪襯; 襯托） set off Ⅱ名詞（襯在裏面的附...
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 組 : Ⅰ名詞1 （由不多的人員組成的單位） group 2 （姓氏） a surname Ⅱ動詞（組織） organize; form Ⅲ量詞（...
  • 織 : 動詞（編織） knit; weave
  • 組織 : 1 （組織系統） organization; organized system 2 （組成） organize; form 3 [紡織] weave 4 [醫學] [...
  1. Purpose ependyma is lined in lumen surface of brain ' s ventricles which is composed of single ciliated cuboidal epithelium and a major component of brain csf barrier ( bcb ) and blood csf barrier ( blcb ). it plays an important role in production of csf, signal traiisttiission, maintainance of homeostasis within the brain, and so on, and a focus of developing pathway both for administration of some drugs into the brain and treatment of brain ' s diseases. ependyma may be specified in some sites perhaps owing to functional need and modified its structures of cells and tissue, which has been called circumventricular organs ( cvos ) since 50 of 20 century

    目的室管膜是襯覆在腦室內面的單層纖毛立方上皮，是腦-腦脊液屏障，血-腦脊液屏障的主要組成部分，在腦脊液的產生，腦內信息的轉導，維護腦的微環境等方面具有重要的作用，也是腦內給藥和腦疾病治療新途徑開發關注的焦點之一；室管膜在一些部位可能是由於功能的需要其細胞和組織結構發生了特化，在二十世紀五十年代人們將這些特化的室管膜稱為室周器官。
  2. The techniques of preparing film buffer layers on si were studied. the sem, tem and xrd were adopted to study the crystal structure of films. the influences of buffer layers, substrate and heat treatment condition on the crystal structure and performance of the ybco films were discussed

    進一步用掃描電鏡、透射電鏡和x射線衍射儀研究了薄膜組織結構和結晶情況，分析了緩沖層和襯底對ybco薄膜制備的影響、以及不同熱處理條件對薄膜結晶結構及性能的影響。
  3. During the inspection by afm and sem, we found that the surfaces morphology of samples was even and smooth, the surface roughness was small. the films were composed of some excellent columnar crystallites. the xps results were found that zn existed only in the oxidized state and the concentration of al was less and the presence of loosely bound oxygen on the surface of azo thin films was reduced after ar + etching

    由以上對azo薄膜的組織結構和光電性質的研究，我們得到了用直流反應磁控濺射法制備azo薄膜的最佳工藝條件為:氧氬比0 . 3 / 27 ，襯底溫度200 ，工作壓強5pa ，靶基距7 . 5cm ，功率58w ，退火溫度400 。
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