質子轟擊的 的英文怎麼說

中文拼音 [zhízihōngjīde]
質子轟擊的 英文
proton-bombarded
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 轟 : Ⅰ象聲詞（指雷、炮擊等發出的巨大聲音） bang; boom Ⅱ動詞1 （雷鳴; 轟擊; 爆炸） rumble; bombard; exp...
  • 的 : 4次方是 The fourth power of 2 is direction
  • 質子 : [物理學] proton; uron; hydrion; merron質子泵 proton pump; 質子層 proton sphere; 質子轟擊 proton b...
  • 轟擊 : （用炮火攻擊或用中子等撞擊原子核） bombard; bombardment; shell
  1. Electron impact mass spectra of heterocyclic derivatives bearing 1 - aryl - 5 - methyl - 1, 2, 3 - triazole

    三唑的雜環衍生物的電子轟擊質譜
  2. Based on the revers kinetic intermediate energy heavy ion collision in which much more intermediate mass fragments are emitted towards forward angles, a sensitive observable on isospin effects in heavy ion collisions is investigated by means of using isospin dependent quantum molecular dynamics ( iqmd )

    摘要在重離子碰撞過程中，基於重質量的彈核轟擊輕質量靶核有大量中等質量碎片向前發射的逆運動學效應，利用同位旋相關的量子分子動力學觀察和研究了重離子碰撞過程中同位旋效應的靈敏性。
  3. Elastic recoil detection technique with high depth resolution has been developed at the hi - 13 tandem accelerator of ciae. with high quality beam which was used for bombarding target, the recoils were detected with q3d magnetic spectrometer following a focal plane detector and a ae - e telescope detector with longitudinal double - room ionization chamber

    該系統用高質量的重離子束轟擊薄膜或塊材靶樣品，利用q3d磁譜儀及其焦面探測器和縱向型雙電離室e ? e望遠鏡探測器兩套探測系統，在前角區測量了靶中各種元素的反沖能譜。
  4. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
  5. By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

    本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。
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