質量遷移率 的英文怎麼說
中文拼音 [zhíliángqiānyílǜ]
質量遷移率
英文
mass-transfer rate- 質 : Ⅰ名詞1 (性質; 本質) nature; character; essence 2 (質量) quality 3 (物質) matter; substance;...
- 量 : 量動1. (度量) measure 2. (估量) estimate; size up
- 遷 : Ⅰ動詞1. (遷移) move 2. (轉變) change 3. (古時指調動官職) be appointed to a certain post Ⅱ名詞(姓氏) a surname
- 移 : Ⅰ動詞1. (移動) move; remove; shift 2. (改變; 變動) change; alter Ⅱ名詞(姓氏) a surname
- 率 : 率名詞(比值) rate; ratio; proportion
- 質量 : 1 [物理學] mass 2 (產品或工作的優劣程度) quality 3 economy (離子源的); 質量標準 quality level...
- 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
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Such a model will ensure the existence of this species in this area. 4. the comparison of the biochemical contents between subitaneous and diapause eggs the dry weight and the contents of each biochemical components in a diapause egg were all more than the ones in a subitaneous egg ; the comparatively content of lipid in t
Sns一獄ge圖譜中滯育卵有10條蛋白質條帶與正常卵的遷移率不同,主要分佈在分子量為71 . 52一102 . 16kd范圍內;產滯育卵的雌體比產正常卵的雌體多了一條分子量為74 . 26kd的蛋白質條帶。In this paper, the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation, thus the carrier effective mass and scattering rate can be obtained. furthermore, taking account for the carrier density in each subband, we establish carrier mobility model in strained - si mosfet
本文通過求解自洽薛定諤方程,確定了應變硅mosfet反型層的子能帶結構,在此基礎上經進一步計算得到子能帶內載流子的有效質量和散射幾率,綜合考慮各子能帶上的載流子的濃度分佈,建立了應變硅mosfet載流子遷移率的解析模型。The experiments show : growth temperature is one of the key growth parameter by which the surface morphology, alloy composition, crystalline quality, mobility and carrier concentration are influenced
實驗表明:生長溫度是一個重要的生長參數,它對外延層的表面形貌、組分、結晶質量、遷移率、載流子濃度有著很大影響。When the graft ratio was high, the hydrophilic side chain was long and the molecular mass of the main chain of the hydrophilic matrix was great, the diffusion of pp - g - peg in pp blends would be poor, and the diffusion coefficient would also be small
接枝率越高、親水性側鏈的長度越長,親基體主鏈摩爾質量越大,接枝共聚物在聚丙烯共混體系中的遷移擴散性能越差,擴散系數越小。The intrinsic carrier concentration reduces when decreasing the v / iii ratio. the high quality of in0. 53gao. 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs. when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0. 2 um the mobility becomes the maximum and the carrier concentration is the lowest
/比對外延層的表面形貌有較大影響,增大/比有利於提高材料的結晶質量;隨著/比增加,遷移率升高;本徵載流子濃度隨著/比減少而降低; ash _ 3和ph _ 3轉換時間在10秒到30秒之間可以獲得質量較好的ingaas外延層;在inp緩沖層厚度為0 . 2 m時遷移率達到最大,載流子濃度達到最低。On the basis of the two - component soliton vibrator model, the motion of a kink pair consisting of kinks in different sublattices and soliton for the response of the external field are discussed. the mobility of a soliton pair is found
以二分量孤子的振子模型為基礎,討論了質子子晶格與重離子子晶格中扭結孤子形成的孤子對的運動及其孤子對外場的響應特性,並得到了氫鍵鏈中孤子對的遷移率表達式Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature
其次,利用霍爾測試方法測量了每種離子注入樣品的電性質(方塊載流子濃度、方塊電阻及載流子遷移率) ,通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同,都會對樣品的電性質產生影響。A source routing framework is proposed to route traffic flows proactively over multiple paths, which tries to optimize routes for long - lived flows based on dispersity routing ; based on mathematical analysis, our approach disperses incoming traffic flows onto multiple paths according to path qualities. long - lived flows are detected and migrated to the shortest path if their qos could be guaranteed there. suggesting non - disjoint path set, four types of dispersion policies are analyzed, and flow classification policy which relates flow trigger with link state update period is investigated
提出一種以業務量內在特性為基礎的前攝式多路路由演算法:以對業務量的內在特性分析為基礎,該方法在多路發送數據流的同時檢測非最短路徑上的長流,而後在保證服務質量的前提下將長流遷移到最短路徑上傳輸;前攝式多路路由使用以路徑質量評價為基礎的業務流分佈方法有效提高網路吞吐量,通過周期性的路徑質量評價適應時變網路狀況;模擬實驗表明,該方法可以有效提高「盡力而為」方式下的網路服務質量和資源利用率;浙江大學博士學位論文3On the basis of the two - component soliton model, discussed the motion of a kink soliton in the presence of an external force and damping in hydrogen bonded systems, investigated the influence of motion and the optical model of the heavy - ions sublattice on the proton sublattice. the solution, the mobility and the conductivity of a kink soliton are found. the calculated results are in good agreement with the experiment results
採用二分量弧子模型,討論了在外場和阻尼存在的情況下,氫鍵系統中扭結弧子的運動,研究了重離子子晶格運動和光學模對質子子晶格的影響,獲得了扭結弧子解、遷移率和電導率,計算結果和實驗值相一致The sheet resistivity dramatically decreases to 106 ? / ?. the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too. te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films
,面載流子濃度增大到109 / cm2的數量級,遷移率亦增大到104cm2 / v . s ,摻雜te元素改善了cdte薄膜的電學性質,使其變為良好的p型半導體。分享友人