超尺寸的模子 的英文怎麼說
中文拼音 [chāochǐcùndemózi]
超尺寸的模子
英文
oversize mold- 超 : Ⅰ動詞1 (越過; 高出) exceed; surpass; overtake 2 (在某個范圍以外; 不受限制) transcend; go beyo...
- 尺 : 尺名詞[音樂] (中國民族音樂音階上的一級 樂譜上用做記音符號 參看「工尺」) a note of the scale in ...
- 寸 : Ⅰ量詞(長度單位) cun a unit of length (=1/3 decimetre)Ⅱ形容詞(極短或極小) very little; very ...
- 的 : 4次方是 The fourth power of 2 is direction
- 模 : 模名詞1. (模子) mould; pattern; matrix 2. (姓氏) a surname
- 子 : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
- 模子 : mould; matrix; pattern; die
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The influences of stator ' s teeth on vibrating modal of the linear standing wave usm are discussed in this paper, in which eigenfrequency and wave - shape are analyzed while the position and geometry dimension of stator ' s teeth are changed, and it can give some advice on design for standing wave linear ultrasonic motor
摘要本文對一類直線型駐波超聲電機振子的振動模態進行了系統的分析,討論了定子齒的位置、幾何尺寸對直線型超聲電機的固有頻率、振型的影響,為該類駐波型直線超聲電機的設計提供了理論依據。Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )
隨著超大規模集成電路的的發展,半導體硅技術非常好地遵循moore定理發展,電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高,電子器件由微米級進入納米級,量子效應對器件工作的影響變的越來越重要,尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下,宏觀的器件理論將被替代,可能需要採用新概念的晶體管結構。Following the development trend of valve cad, according to the requirements of the chengdu chengfeng valve limited company and based on mdt, this article develops the 3d parametric valve design system. the main work and achievements are as follows : based on the 2d engineering drawing of the several different valves the company provided, the 3d parametric basic drawing - base is set up using mdt which is a 3d design platform, including all the parts drawings and the general assemblage drawings of the valve models ; in accordance with the common steps of the valve design, the parameter editors are designed to edit, import and export the valve parameters and are provided with the function of double synchronization on parameters displaying for convenience in use ; in order to meet demands of users and make the design more accurate, reliable and practical, the assistant formula calculators are developed, which can automatically do all types of structure calculation in the procedure of valve design, and export the calculation manual of valve design ; in order to make designers more rivalries, taking full advantage of internetmntranet technology, the virtual design center is developed, which integrate netmeeting, terminal service and super links, so that the designer can directl y use applications on remote server, communicate with other designers on intranet / internet, share software resources and realize long - distance cooperative design
根據閥門cad發展趨勢,針對成都乘風閥門有限責任公司閥門設計現狀,本課題基於mdt三維設計平臺開發了閥門三維參數化設計系統,主要完成的工作和成果如下:根據公司提供的幾種不同結構閥門的二維工程圖紙,利用mdt三維設計平臺建立了三維參數化基本圖形庫,其中包括所有零部件和總裝配模型圖及二維工程圖;依照閥門設計的一般步驟設計了參數編輯器,用來對閥門尺寸參數進行編輯、輸入、輸出等,具有參數雙向同步顯示功能,使用十分靈活方便;根據用戶的需求,為了使設計達到精確、可靠、實用的要求,設計開發了輔助計算器,能自動完成閥門設計過程中所需的各種結構計算,並可以輸出閥門設計計算說明書;為了使設計人員更具有競爭力,本系統利用internet intranet技術設計開發了虛擬設計中心子模塊,虛擬設計中心集成了網路會議、終端服務、超級鏈接等功能,可以讓設計師直接使用服務器上的應用程序,與intranet internet上的其他設計專家進行交流、共享軟體資源,實現遠程協同設計。We consider the long - range interaction, the phonon - pseudospin interaction, the interfacial effects and the size effect respectively. firstly, within the framework of spin - 1 / 2 transverse ising model ( tim ), the long - range effects on the pyroelectric properties of a ferroelectric superlartice are studied by use of the beyond mean - field theory
應用超越平均場的理論、格林函數方法,在橫場伊辛模型的框架內,考慮了贗自旋間的長程相互作用、聲子與贗自旋的相互作用、界面效應和尺寸效應,對鐵電超晶格的熱電性質進行了較深入的研究。First, the scaling limitation and relative reliability problems are analyzed for mosfet in vlsi, especially for hot - carrier effects of small dimension mosfet. and a review of the study of hot - carrier effects on devices and circuits is presented
首先,本文對超大規模集成電路中mos器件尺寸縮小的限制及相應的可靠性問題進行了分析,特別是對小尺寸mosfet的熱載流子效應進行了較詳細的討論;並對國內外mos器件和電路的熱載流子可靠性研究進行了概述。分享友人