超微半導體 的英文怎麼說
中文拼音 [chāowéibàndǎotǐ]
超微半導體
英文
advanced micro devices- 超 : Ⅰ動詞1 （越過; 高出） exceed; surpass; overtake 2 （在某個范圍以外; 不受限制） transcend; go beyo...
- 半 : Ⅰ數詞1 （二分之一） half 2 （在 中間的） in the middle; halfway 3 （比喻很少） very little; the l...
- 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
- 體 : 體構詞成分。
- 超微 : advanced micro devices
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Abstract : experiments were made on a ultrasonic machining tool with work - piece adhered to ultrasonic transducer head, to machine micro - holes on hard and brittle materials such as soda glass and si, to study the effects of tool materials ， work - piece materials ， amplitude ， machining load ， slurry concentration ， tool length and the size of work - piece on machining rate and wear ratio. in this experiment, the micro - tool was made through wedg
文摘:通過以wedg放電加工手段製作微細超聲加工用工具，在採用工件加振方式的微細超聲加工機上對碳酸玻璃、半導體硅等硬脆材料試件進行微孔加工的實驗，來探討在某一特定加工條件下工具材料、工件材料、工件的振幅、加工靜載荷、磨料懸浮液濃度、工具長度及工件尺寸等重要因素對加工速度、工具損耗率的影響，為微細超聲加工技術的實用化提供參考依據。Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )
隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。With the deep sub - micron process being mainstream technique in semiconductor production, the shrinking scale and the expanding size & complexity bring about a series of severe problems, which poses a great challenge on asic ( application specific integrated circuits ) design. we must consider synthesis and test requirements in the early time of front - end design
隨著超深亞微米工藝成為半導體業界的主流加工工藝，日漸細微的器件尺寸以及不斷膨脹的設計規模和復雜度引起了一系列嚴峻的問題，給asic設計帶來了巨大的挑戰，迫切要求在前端設計時就開始考慮綜合、驗證和測試的需要。Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic
以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。Micro - electro - mechanical system ( briefly named mems ) has grown up along with the development of semiconductor ' s integrate circuit minuteness machine technology and exceed exactitude machine process technology. its characteristic such as micromation, integration, batch production and inter - discipline, which has caught great attention, will bring a large progress in people ' s life
微機電系統技術（ mems ）是隨著半導體集成電路微細加工技術和超精密機械加工技術的發展而發展起來的.其微型化、集成化、批量生產和多學科交叉等優良特性將對人類社會生活帶來巨大的進步，是電子領域的新寵Amd advanced micro devices, inc
超微半導體公司Amd : advanced micro device
超微半導體Amd advanced micro device
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