跨膜壓 的英文怎麼說
中文拼音 [kuàmóyā]
跨膜壓
英文
transmembrane pressure-
The chemiosmotic hypothesis describes the stomatal opening as a process in which the osmotic materials, mainly potassium, accumulate in guard cells, and as a result of the increase of osmotic pressure and the absorption of water into guard cells the stomata are driven to open. the energy for trans - membrane transport of k + is the hyperpolarized potential across plasmalemma, which is established by the proton extrusion
化學滲透假說認為氣孔開放是由外來滲透物質（主要是k ~ + ）等在保衛細胞中的累積造成的滲透壓上升所致，而離子跨膜運輸的動力是誘導氣孔開放的因子引發的保衛細胞向胞外泵出質子所造成的超極化膜電位。But for real microfiltration, the distribution of shear stress on the membrane of the module with outside helical flow would have benefit to make smaller number of particles deposit on the membrane. ( 2 ) by means of orthogonal test and regression method, four new models, trans - membrane pressure model, flux model, trans - module pressure drop model, and efficiency model, were established, which roundly describe the performance of outside helical mf by depicting the flux, energy loss, and handling capacity simultaneously
（ 2 ）採用正交回歸實驗，在無顆粒沉積的理想情況下，建立基於層流數值解的膜器跨膜壓力損失模型、過濾通量模型、過膜器的壓力損失模型和膜器過濾效率模型，首次從通量、能量損失及膜器對料液的處理能力等三個方面，更全面地對外旋流方式下的微濾過程進行了描述。The transport of water across some cell plasma membranes is facilitated by aquaporin ( aqp ) water channels, which are small transmembrane proteins that function as passive conduits for osmotically or hydrostatically - driven water transport
水通道蛋白（ aquaporin ， aqp ）是一種小分子跨膜蛋白質，其在滲透壓和靜水壓的驅動下能促進水分子跨細胞膜轉運。The effect of high electrostatic field on plant cellular transmembrane voltage and micro principles
高壓靜電場對植物細胞跨膜電位的影響及機理初探Compaction of microporous membrane and its influence on the mass flux of membrane distillation
微孔膜的可壓縮性及參數變化對膜蒸餾跨膜傳質速率的影響Analytical model for the transmembrane voltage induced on a permeabilized cell membrane in suspensions exposed to dc pulse fields
直流脈沖場作用下穿孔懸液細胞跨膜電壓計算模型Physics device model, component structure design and fabrication technology are discussed based on the thorough analysis of strained silicon and soi physics mechanism. the detail contents are as follows. the analytical threshold voltage model, drain current model and transconductance model are derived from poisson ’ s equation for the fully depleted strained soi mosfet
本論文圍繞這一微電子領域發展的前沿課題，在深入分析應變硅和soi物理機理的基礎上，對器件的物理模型、器件結構設計和工藝實驗等問題作了研究，主要包括以下幾部分:首先，從器件的物理機制出發，建立主要針對薄膜全耗盡型器件的閾值電壓、輸出電流和跨導模型。分享友人