載流子漂 的英文怎麼說

中文拼音 [zǎiliúzibiāo]
載流子漂 英文
carrier drift transistor
  • 載 : 載Ⅰ名詞（年） year : 一年半載 six to twelve months; six months to a year; 三年五載 three to five ...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 漂 : 漂動詞[方言] （事情、帳目等落空） fail; end in failure
  1. Carrier drift transistor

    載流子漂移型晶體管
  2. As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes

    碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。
  3. Pic simulations are performed to determine gap scaling in a high density pegs. comparisons of simulation results with simply theory results and experiment results, indicate that the pegs gap is always equal to the critical gap for magnetic insulted electron flow. it is important to note that, the vacuum electron flow to the anode causes current loss and the

    另外，根據模擬結果還得到了兩個重要結論：電流損失是由真空漂移電子的出現所造成的，電流損失的大小與負載阻抗成近似正比關系；負載阻抗等於peos的流阻抗時，負載獲得功率最大。
  4. Finally, we present the approximate distribution of trapping potential of the guided cold atoms in the atomic funnel based on the vccc or the uccc. by using a similar method in the analysis of optical coherence, we study the coherent evolution of the ground - state wave function of ultra - cold atoms in atomic funnel, and obtain some normalized correlation functions of the first, second, third and high order

    最後，給出了原子在基於v -型和u -型載流導體構建的原子漏斗中所感受到的囚禁勢的摘要採用漂流導體的原子易引及其原於光學器件近似分分，並採用類似於光場相干性的分析方法，計算了超冷原子物質波的基進波函數及其在原子漏斗中傳播時相干性的演化，得到了物質波的一階、二階、三階和高階相於度。
  5. Graded doping is adopted in both sides of the junction ( double graded doping ). this results in a strong ( drift ) electric field throughout the whole active layer. this field will accumulate minority carriers effectively and the whole internal quantum efficiency is increased

    漂移場的形成是通過mbe技術，在結的兩側都採用梯度摻雜（即雙梯度摻雜） ，從而在整個有源層都建立起一個強的（漂移）電場，有效地利用載流子在電場作用下的漂移作用收集少數載流子，使得總內量子效率得以提高。
  6. Agrawal ' s theory model of soa ca n ' t simulate accurately the amplified signal pulse shape in soa when the pulse width is as short as several picosecond. so we simulate accurately the peak power, full width half maximum, rising time and falling time of amplified pulse after considering the gain compression, gain asymmetry, gain shift, gain variable with situation and time. with ultrahigh velocity dense wavelength division multiplexing ( dwdm ) and optical time division multiplexing ( otdm ) developing, we demand more and more short signal pulse and more signal channels

    但當信號脈沖的寬度只有幾個皮秒時， soa傳統的agrawal理論模型已經不能完全準確地模擬soa對信號脈沖的放大情況，在此基礎上，我們在全面考慮soa的增益壓縮、增益非對稱和漂移、增益隨位置和時間變化的載流子壽命等物理機制的情況下，對皮秒超短高斯信號光脈沖經soa放大后的脈沖的峰值功率、脈沖半值全寬度、脈沖的上升時間和下降時間等重要物理參量進行了準確模擬和詳細研究。
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