輔助偏壓 的英文怎麼說
中文拼音 [fǔzhùpiānyā]
輔助偏壓
英文
supplementary bias-
Ion - assisted bombardment and direct current bias were emphasized in charter ii and charter iii respectively on studying how external factor as an assisted avenue can influence the growth of amorphous carbon film
第二章和第三章分別從引入離子轟擊和施加直流偏壓電場兩方面著重研究了外界條件作為輔助手段對非晶碳生長的影響。Polycrystalline diamond films with preferred orientation by adopting assisted - bias hfcvd technique are prepared, and the mechanisms of the nucleation and growth of the films are studied. in addition, application of the film to the heat sink of power electron device is discussed
採用輔助偏壓熱絲cvd技術，制備擇優生長的多晶金剛石薄膜，研究了金剛石薄膜的成核及生長機理，並將其應用於功率電子器件的熱沉。The study on low temperature pvd deposited sic film was carried out - m - employing bias assisted magnetron sputtering. furthermore, pvd deposited sic film mainly containing cubic phase was achieved at room temperature for. the first time
採用偏壓輔助rf濺射法，對低溫物理氣相沉積sic薄膜進行了研究，並首次在室溫下制備出含有? sic構相併以其為主的sic薄膜。By changing the negative bias current density, gaseous ratio and total pressure, nanocrystalline diamond film is prepared by ion - assisted bombardment method at the substrate temperature of 700 ? 00 ? and mixture gaseous of ch4 and h2 the effect of growth parameters on the diamond film is studied. the diamond film presents very low compressive stress and excellent field emission character
採用離子輔助轟擊法，以ch _ 4 、 h _ 2為源氣，襯底溫度為700 900 ，通過改變襯底負偏壓、 h _ 2和ch _ 4氣體比例以及工作氣壓，制備出納米金剛石薄膜，並對工藝參數對金剛石薄膜沉積的影響進行了研究。Sic film was coated on the surface of 316l stainless steel by substrate bias - assisted radio frequency ( rf ) sputtering as tritium permeation barrier ( tpb ) of first wall and blanket in fusion reactor
採用分步偏壓輔助射頻（ rf ）濺射法在316l不銹鋼表面制備了sic薄膜。掃描電鏡（ sem ）觀察表明膜緻密、均勻、與基體結合牢固。Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature
本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。The solution to the problem of hydrogen contained in the film was initially proposed for pecvd technique. meanwhile, the adoption of substrate bias assisted deposition further eliminated the impurity o in the film
首次解決了採用pecvd法低溫制備? sic薄膜中的含氫問題；同時，採用偏壓輔助的技術，進一步解決了薄膜中的含氧問題。分享友人