輝度控制 的英文怎麼說

中文拼音 [huīdùkòngzhì]
輝度控制 英文
intensity control
  • 輝 : Ⅰ名詞（閃耀的光彩） brightness; splendour; brilliance Ⅱ動詞（照耀） shine
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 控 : 動詞1 （告發;控告） accuse; charge 2 （控制） control; dominate 3 （使容器口兒朝下 讓裏面的液體慢...
  • 制 : Ⅰ動詞1 （製造） make; manufacture 2 （擬訂; 規定） draw up; establish 3 （用強力約束; 限定; 管束...
  • 控制 : control; dominate; regulate; govern; manage; check; cybernate; manipulate; encraty; rule; rein; c...
  1. Because of the implementation and proclamation of prohibition laws against opium, in the control districts of the taiping heavenly kingdom, opium was out of eyes, thus a glorious page in the history of modern chinese prohibition against opium

    由於禁煙立法的頒布和實施，在太平天國控制區內，鴉片一度幾乎禁絕，在中國近代禁煙史上留下了光輝的一頁。
  2. In the case, the subsidiary wholly owed by a corporation is a large scale state owed enterprise with glorious history rewarded for its excellent profit. but it finally failed because of its financial crisis. it is one of the important reason of the failure that the corporation could n ' t obtain the financial information in time, and could n ' t obtain the real data which misguided the corporation leaving the subsidiaries financial risk alone which resulted in the liquidation

    案例中的子公司是一家大型國有企業，從集團公司財務風險控制角度分析該公司從輝煌到走向清算的歷程，本文認為子公司上報信息不及時、反饋數據不充分、溝通情況不符合實際，使集團公司預測不準確、決策相對滯后、戰略調整不到位是該財務失敗的重要原因之一。
  3. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  4. The mineral chemistry amd elemental variations in whole rocks can be ascribed to results of partial melting of various degrees. according to the fractional melting model, the partial melting degree for the iherzolites is less than 5 percent, and about 7 to 20 percent for harzburgites

    全巖及礦物的主量元素的成分變化主要受部分熔融程度的控制，分異熔融模型獲得的二輝橄欖巖的部分熔融程度5 ，方輝橄欖巖部分熔融程度在7 - 20之間。
分享友人
分享到 Line

分享到臉書