輻射光致發光 的英文怎麼說

中文拼音 [fúshèguāngzhìfāguāng]
輻射光致發光 英文
radio photoluminescence
  • 輻 : 名詞（車輪中車轂和輪圈的連接物） spoke
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  • 致 : Ⅰ動詞1 （給與;向對方表示禮節、情意等） deliver; send; extend 2 （集中於某個方面） devote （one s ...
  • 發 : 名詞（頭發） hair
  • 輻射 : radiation; exposure; radio; beaming
  • 發光 : 1 （發出光來） give out light; shine; be luminous; brighten; fulgurate; flash; glow; sparkle; gli...
  1. The process of photoluminescence refers to the radioative recombination of electronhole pairs generated by shining high energy light on a crystal.

    光致發光過程就是高能量光子照射到晶體上之後，晶體所產生的電子一空穴對的輻射復合過程。
  2. Tld practice for use of thermoluminescence - dosimetry systems for radiation processing

    輻射處理用熱致發光劑量測定
  3. Tld standard practice for use of thermoluminescence - dosimetry systems for radiation processing

    輻射加工用熱致發光劑量測定
  4. Within 3mm of near the al target, there were the continuum spectra and the line emissions, the former was produced by bresstrahlung and compound of electrons, the later came from the excited state of al, al + and al2 +. in order to analyze the shape of the aluminum resonant double lines, al 1396. 15nm and al i394. 40nm, relative intensities of the double lines were acquired by integrating the area under the double lines, respectively

    在近靶面3mm左右的范圍內， a1等離子體的發射光譜主要是連續輻射形成的連續譜和疊加於連續譜上的分立譜，其中連續輻射主要由電子的韌致輻射和復合輻射產生， a1原子譜線比離子譜線在空間上分佈范圍更廣。
  5. It is found that the fwm field can cause the asymmetry of electromagnetically induce transparency profile. in addition, the effect of different propagating orientations of probe field on the electromagnetically induced transparency is also discussed. in the molecular multi - level system with the perturbed superposition levels, we discuss the electromagnetically induced transparency, spontaneous emission enhancement, double dark resonance and double electromagnetically induced transparency by using the density matrix equation under weisskopf - winger approximation and dressed - state density matrix equation

    針對實際的實驗條件，考慮了一種影響量子干涉的新的因素-四波混頻場，研究了四波混頻場對雙光子探測的-型能級體系的eit的影響，發現四波混頻場能夠導致雙光子探測的eit線型的不對稱，在此基礎上，討論了不同探測場的傳播方式對eit的影響，針對分子中實際存在的包含有微擾能級的不同多能級系統，我們分別採用綴飾態繪景下的密度矩陣方程和weisskopf - wigner近似下的密度矩陣方程詳細地討論了電磁感應透明、自發輻射的干涉相消和相長、雙暗態共振和雙電磁感應透明現象。
  6. Nuclear energy - radiation protection - individual thermoluminescence dosemeters for extremities and eyes

    核能.輻射防護.肢端和眼用單獨熱致發光劑量計
  7. By calculating the feynman diagram in rtf, we find that when taking into account both the thermal photon emission, absorption and the virtual photon exchange processes, the infrared divergences at zero and finite temperature can be cancelled at the same time. the full quantum calculation results for soft photon radiation coincide completely with the poisson distribution obtained in the semiclassical approximation ( the coupling of the classical current and quantized field )

    通過實時溫度場論下的費曼圖計算，我們得到：將實光子的發射、吸收，虛光子的交換過程同時考慮時，零溫場論中出現的和由溫度效應引起的紅外發散都能得到消除；並且完全量子場論下的軟光子輻射幾率與半經典近似下（經典的電流和量子化的電磁場之間的耦合）得到的泊松分佈結果完全一致。
  8. Tld standard practice for application of thermoluminescence - dosimetry systems for determining absorbed dose in radiation - hardness testing of electronic devices

    電子器件輻射硬化試驗中測量吸收劑量用的熱致發光劑量測量
  9. With the increase of the amount of al, the intensity of the pl peak at 510nm increases. with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies, and 510nm peak originate from a complex co - function of al, si, and o. el devices have been fabricated on three types of silicon based oxide films ( ge - sio2 films, si - sio2 films, and al - sio2 films )

    用不同的方法制備的51一5102薄膜、 ge一510 :薄膜和al一51一5102薄膜，在較低的電壓萬均觀察到了室溫可見電致發光現象，峰位都在510nm左右，其峰位不因薄膜樣品內所含顆粒的種類、薄膜的制備方法、偏壓及后處理的影響，表明電致發光主要來源於電子和空穴在510 、基質中的發光中心的輻射復合發光。
  10. We also have analyzed the photoluminescence ( pl ) spectra of some zno films, it turns out that the emission of ultraviolet light comes from the radiative recombination of excitons within nano - crystal energy band - gap, and the pl peaks move to smaller wavelength because zn are substituted by fe, co, and cu, which cause the size of the film grains smaller and the effective band - gap bigger. the red emission of zno films is due to, on the one hand, decrease of the film grains size which causes the emission intensity smaller and smaller until it disappears abruptly, on the other hand, the transition of electrons from deep donor level of the oxygen vacancies to the valence band

    另外，我們還對薄膜光致發光性質進行了分析和研究，結果表明：納米結構zno薄膜的紫外發光來源於帶間激子的輻射復合發光， pl譜的帶邊發射峰發生藍移是由於fe 、 co 、 cu對zn的替代使薄膜粒子的尺寸減小，使薄膜的有效帶隙增寬； zno薄膜的紅色發光，一方面是zno顆粒尺寸的減少，帶間的激子發射峰越來越弱直至猝滅，另一方面主要是與zno晶格中的o空位有關，由深能級復合發光引起紅光發射。
  11. Based on the above work, the optical absorption and photoluminescence ( pl ) properties of a - sinx : h films with different compositions are studied through ultraviolet - visible spectroscopy ( uv - vis ) and time - resolved photoluminescence ( tr - pl ), the dependence of pl intensity decay on emission photon energy is found, the luminescence mechanism of nanosilicon embedded in silicon nitride matrix is presented, finally, the effective approaches to improving the luminescence efficiency of a - sinx : h films are discussed

    在此基礎上，通過紫外-可見光譜（ uv - vis ）技術，時間分辨光致發光譜技術研究了不同組分的富硅a - sin _ x ： h薄膜的光吸收和光輻射特性，得到了材料光致發光衰減和輻射光子能量之間的關系，提出了鑲嵌在氮化硅中的納米硅的發光機制，進而探討了提高納米硅薄膜發光效率的有效途徑。
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