退化劑 的英文怎麼說

中文拼音 [tuìhuà]
退化劑 英文
depolariser
  • 退 : 動詞1 (向後移動) retreat; draw back; move back 2 (使向後移動) cause to move back; remove; wit...
  • : Ⅰ名詞1 (藥劑; 制劑) a pharmaceutical or other chemical preparation 2 (某些有化學作用的物品) a...
  • 退化 : become vestigial; degenerate; deteriorate; retrograde; devolution; retrogradation; retrogression;...
  1. Physical deterioration of adsorbent is not a problem.

    不存在吸收物理退問題。
  2. It is as follows : the overlay of endowment insurance is narrow, the most individual indust - - ries, the private enterprise and non - agriculture persons still have not brought into the current endowment insurance system ; the levy level descends, the phenomenon of arrearage still cannot be forbidden ; the level of orchestration is low and lack of adjustment necessarily ; " the difference in amount appropriates different insurance fee " the problem still exists ; the retirement age is so early " the phenomenon of reti - - rement in advance is more serious ; the degree of socialization is low, the onus of the state - owned enterprise is overweight and so on

    主要表現在;養老保險覆蓋面窄,大多數個體工商戶和私營企業以及非農業人員還沒有那入到現行的養老保險體系;征繳水平下降,欠費現象屢禁不止;統籌層次低,缺乏必要的調; 「差額繳撥」問題依然存在;退休年齡鍋灶, 「提前退休」現象比較嚴重;社會程度低,國有企業負擔過重等諸多方面。
  3. Ceo22 is used as optical materials, polishing agents, ultraviolet absorption materials, the cleaning catalyst of car ' s waste gases, chemical decolorant of glass, radiation - resisting glass permanent magnet, electronic ceramics etc. if it is processed into nanoparticles, it will exhibit some novel properties led to varied applications. for example, ceo22 nanocrystal is a better promoter of cytochrome c and the stabilizer of zro22 ceramics. because of its high index of refraction and good stability, it is used to produce reduced reflection film

    Ceo _ 2是一種廉價而用途極廣的材料,如用於發光材料、拋光、紫外吸收材料、汽車尾氣凈、玻璃的退、耐輻射玻璃、永磁體、電子陶瓷等,其納米后將出現一些新的性質及應用,如ceoz納米晶是細胞色素c的良好的催進,還用作zro :陶瓷的穩定,由於ceo :折射率高,穩定性好,常用於制備減反射膜等。
  4. Pancreas, a long, irregularly shaped gland in vertebrates, lying behind the stomach, that secretes pancreatic juice into the duodenum and insulin, glucagon, and somatostatin into the bloodstream

    阿司匹林,乙醯水楊酸一種從水楊酸中提取的白色晶體合物, h3cooc6h4cooh ,常以片的方式用於減輕疼痛,退燒和消炎。胰。 pancreatic胰腺的
  5. Abstract : by utlizing abundant local resource of ytirium and combining the characteristics of magnesium, barium, calcium and silicon, a sort of composite nodulizer - ytirium - based heavy rare earth nodulizer was developed which is characterized by its good desulphurizing and deoxidizing rate effect, excellent effect to neutralize anti - nodulizing effect of trace elements, strong nodulizng effect and degeneration - resistance, good effect to fine matrix structure, decreased chilling tendency and wide scope of applicatiom using this nodulizer to produce some important castings such as water - cooled wall of blast furnace and roller could increase mechanical properties of central area and casting yield

    文摘:利用江西省豐富的釔基重稀土,結合鎂、鋇、硅、鈣等元素的特性開發了釔基重稀土復合球,該球具有脫硫、脫氧、抗干擾元素、球和抗球退能力強,細基體組織,白口傾向小,適用范圍寬等特點,應用於高爐冷卻壁,軋輥等關鍵鑄件上可提高心部力學性能和工藝出品率。
  6. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響,藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段,我們發現,與傳統注氧隔離( simox )技術類似,存在著「量窗口」形成優質的soi材料,但在水等離子體離子注入方式中soi材料結構質量對量變更為敏感,隨著注入量的增大, soi材料的埋層厚度增大而表層硅厚度減小。
  7. Sulfur recycle catalyst activeness decline reason and its preventive measures are analyzed

    摘要分析了硫磺回收催活性衰退的原因及防止措施。
  8. In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth

    本實驗採用頂部籽晶熔法生長了純的以及不同摻雜的ktp晶體,用特殊工藝處理技術將普通熔法ktp的電導率降低了三個數量級,達到了10 ~ ( - 10 ) ( cm ) ~ ( - 1 ) ,解決了普通熔法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難;對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究,通過優生長工藝技術參數,突破了工藝技術生長難關,得到了高光學均勻性、具有大z切面的ktp單晶。
  9. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面:首次採用硅( 100 )襯底上直接外延的100nm厚sige的樣品中注入高量的o離子,通過退火處理成功制備了sige - oi新結構,即sige - simox工藝,證實了以45kev注入3 10 ~ ( 17 ) 7cm ~ ( - 2 )量的氧離子,隨后在氧層的保護下經1250 , ar + 5 o _ 2氣氛的高溫退火( 5小時)過程,可以制備出sige - oi新型材料;實驗中觀察到退火過程中的ge損失現象,分析了其原因是ge揮發( ge通過表面氧層以geo揮發性物質的形式進入退火氣氛)和ge擴散( ge穿過離子注入形成的氧埋層而進入si襯底中) ,其中ge擴散是主要原因;根據實驗結果及實驗中出現的問題,對下一步工作提出兩個改進的方案:一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路,二是可以通過控製表面氧來調節安止額士淤丈撈要表面sige層中的ge組分,從而部分解決sige
  10. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備,在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時,用氬、氫混合束對沉積膜作高量的離子束轟擊,使得被氬離子轟擊后斷鍵的氧釩分子,再被注入氫降價,然後經適當的退火,成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜(國外報道值為2 - 3 ) ,並研製了單元懸空結構探測器和8 1 , 16 1線性陣列。
  11. The problem is usually associated with aging and alcohol abuse, but new findings show that drinking soda with the preservative can eventually lead to cirrhosis of the liver and degenerative diseases such as parkinson ' s

    問題是通常與老年和酗酒聯系在一起,但新的研究結果顯示,飲用含有防腐的蘇打飲料最終能導致肝硬和和退性疾病如帕金森癥。
  12. As socialization degree rise, emeritus charge undertakes adjusting between the enterprise inside limits of city, county not only, and undertake adjusting between the area, transfer as a whole by city, county stage by stage provincial as a whole

    隨著社會程度的提高,退休費用不僅在市、縣范圍內的企業之間進行調,而且在地區之間進行調,逐步由市、縣統籌過渡到省級統籌。
  13. A simple and economical oil removal process is introduced. in oil removal equipment, the profiled hinge is prinkled high - efficiency detergent and cleaned mechanically. surface quality of finished profiled hinge is improved with no black carbide films attached after annealing

    介紹了簡便、經濟的除油脫脂方法? ?在機械除油裝置中噴淋高效清洗,用機械擦試的方法清洗鉸鏈異型材,使成品退火后的異型材無碳黑膜附著,從而提高其表面質量。
  14. Abstract : a simple and economical oil removal process is introduced. in oil removal equipment, the profiled hinge is prinkled high - efficiency detergent and cleaned mechanically. surface quality of finished profiled hinge is improved with no black carbide films attached after annealing

    文摘:介紹了簡便、經濟的除油脫脂方法? ?在機械除油裝置中噴淋高效清洗,用機械擦試的方法清洗鉸鏈異型材,使成品退火后的異型材無碳黑膜附著,從而提高其表面質量。
  15. Additional annealing experiments in nitrogen atmosphere revealed that the heavily damaged region with hydrogen - induced defects appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high - temperature annealing process, and consequently, broaden the thickness of the box layer. this important finding may provide a possible solution to reduce the cost of the conventional simox - soi wafers while maintaining a desirable box thickness

    獨特設計的氮氣氛退火及分步退火實驗證明了原注入樣品的缺陷層中氫及氫致缺陷的存在使得在退火過程中加速外界氣氛中的氧擴散進來,並成為強捕獲中心使擴散進來的氧滯留于缺陷層從而促使氧缺陷層中的氧沉澱生長,加速了高溫退火中的內部熱氧過程,從而形成了比傳統相同量simoxsoi厚得多的氧埋層。
  16. In this paper, we used different doping means to prepare the mn - doped gaas material. firstly, we incorporated mn of different dose into gaas by ion implantation, including the couple - ion implantation with mn + and c, then performed rapid thermal annealing in different temperature. furthermore, we incorporated mn into gaas using different mn sources ( pure mn and mnas ) by diffusion

    本論文利用不同摻雜方法進行了摻mngaas這種dms材料樣品的制備,首先利用離子注入法對砷鎵( gaas )材料進行不同量的錳( mn ~ + )離子注入,其中包括加碳( c )的雙離子注入,然後在不同溫度下進行快速退火處理;此外還利用擴散法對gaas晶片進行不同mn擴散源(純mn 、及mnas )的摻雜。
  17. In czochralski silicon crystals ( czsi ) through fast neutron irradiation, formation and conversion of defects were investigated using fourier transform infrared spectroscopy ( ftir ), positron annihilation technology ( pat ) and scanning electron microscope ( sem ). the results showed that fast neutron irradiation induced large quantity of metastable defects which can be the capture centers of positron, positron annihilation average lifetime of samples increased with increasing of irradiation dosage. positron annihilation average lifetime of irradiation samples through dosage up to 1 1018 n. cm - 2 tended to constant

    本文對直拉硅樣品進行了不同量的快中子輻照,在硅中引入大量的亞穩態缺陷,研究這些亞穩態缺陷的形成,並在較寬的溫度范圍內對輻照樣品進行了退火處理,研究退火后亞穩態缺陷的轉及同硅中氧的相互作用,應用傅立葉變換紅外光譜技術( ftir ) 、正電子湮沒技術( pat )和掃描電鏡( sem )進行了測試。
  18. The reasons for higher oxidizer flow rate, lower fuel regression rate and lower motor performance in both hot firings are discussed. several necessary improvements for the test system are suggested. 6

    通過對兩臺發動機試驗結果的分析,找出了試驗中氧流量偏高、燃料退移速率和發動機性能偏低的原因,並提出了具體的改進措施。
  19. Concerning sulfur deposition, the carbonaceous matter deposition and the sulfuric acid salinization due to exterior factors, the measures such as sulfur removal, coke burning and reduction operation can be taken to prolong the service life of the catalyst

    對于因外部因素硫沉積、含碳物質沉積和硫酸鹽原因引起的催活性衰退可分別採取除硫、燒炭和還原操作方法恢復其活性,延長催的使用壽命。
  20. The results of research indicate that the pressure, the thrust and the fuel regression rate of the motor decrease while the o / f ratio increasing with the burning time lasting. the special impulse reduces when throttling

    研究結果表明:壓強、推力和燃料退移速率隨發動機工作時間增加而降低,氧和燃料的配比升高;節流時,發動機比沖降低。
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