退火結晶 的英文怎麼說

中文拼音 [tuìhuǒjiējīng]
退火結晶 英文
annealing crystallization
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 退火 : [冶金學] anneal; annealing; back-out
  • 結晶 : 1 （析出晶體） crystallize2 （晶體） crystal 3 （成果） crystallization; fruit; product; quintess...
  1. The degree of crystallinity can be increased by annealing in an inert atmosphere.

    結晶度可通過在惰性氣體中的退火處理來提高。
  2. The crystallinity of azo thin films became better after annealing treatment

    退火處理能使其結晶度提高。
  3. In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper

    本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。
  4. 2. the optical transmission spectra of batio3 thin films annealed at different temperatures on fused quartz substrates are measured. the bandgap energies calculated from their optical transmission spectra are larger than that of single crystals reported in the literatures, whereas for poor - crystallized films with lower annealing temperature, their bandgap energy values are much larger than that of single crystals

    發現batio3多晶薄膜的光學帶隙大於文獻報導的單晶薄膜的光學帶隙，對于結晶性好的薄膜，其光學帶隙接近於單晶值，退火溫度越低，結晶性越差，與單晶的光學帶隙相差越大。
  5. A satificatory effect is obtained by rime annealing

    採用再結晶退火工藝處理，可取得滿意效果。
  6. Zircaloy - 4 sheet, which was cold - worked followed by recrystallization annealing, exhibits longer lcf life in the rolling direction than that in the transverse direction, and the fact that difference in lcf life between both directions becomes larger as the range of plastic strain becomes lower can be attributed to the texture effect, p - solution treatment deteriorates the alloy ' s lcf property because the treatment lowers the average value of alloy ' s schmid factors, and the subsequent annealing - treatment in a - phase range has a impact on the lcf properties, i. e. the subsequent annealing - treatment at 500 ? for 1. 5h results in better property than that at 750 for 1. 5h, which comes mainly from the fact that the alloy annealled at 500 for 1. 5h has lower amount of the precipitate particles than the alloy annealled at 750 for 1. 5h

    對于冷加工后經再結晶退火處理的zr - 4合金，軋制方向的低周疲勞壽命比橫向要大。隨著_ p的降低，兩個方向的低周疲勞壽命的差別相應增加，這是由於合金中存在織構的緣故。冷加工后經再結晶退火處理的zr - 4合金在固溶處理后，抗疲勞性能明顯降低，這主要是由於固溶處理降低了合金的schmid因子；固溶處理后在相區的退火對疲勞性能有影響，即500 1 . 5h退火的抗疲勞性能要優於750 1 . 5h退火，這主要與500 1 . 5h退火的合金中沉澱相粒子的數量較少有關。
  7. The nano - crystals of si are found embedded in the amorphous matrix in the unannealed sample. the crystallinity of the films is increased with raising deposit temperature

    研究發現，未經退火處理的薄膜是納米硅品粒鑲嵌于非晶介質中，並與氧化硅晶粒形成復合的特殊結構。
  8. Low cycle fatigue ( lcf ) behavior of zircaloy - 4 has been reviewed in the present paper. then, the lcf behavior of a recrystallized zircaloy - 4 plate with different texture has been studied at room temperature and 400, respectively

    並在此基礎上，研究了不同溫度（室溫和400 ） 、不同取向（平行於軋向和垂直於軋向）的再結晶退火態zr - 4合金板材試樣的低周疲勞性能。
  9. Ge - sio2thin films were prepared by an rf co - sputtering technique on p - si substrates from a ge - sio2 composite target. the as - deposited films were annealed in the temperature range of 300 - 1000 under nitrogen ambience. the structure of films was evaluated by x - ray diffraction ( xrd ), x - ray photoernission spectroscopy ( xps )

    當溫度較低時（沉積時的基片溫度ts 450 ，后處理退火溫度ta 800時，制備的樣品均為非晶結構，當溫度較高時（ ts 450 ， ta 800 ）薄膜樣品中才出現si的結晶顆粒。
  10. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  11. The zn / o ratio, c - axis orented and stress were improved by annealing, and also redusing the defect of zno flim, increasing the size of grain. but too high annealing temperature was adverse to recrystallization of zno thin film

    退火能改善zno薄膜的鋅氧比、 c軸的擇優取向和應力狀態，減少薄膜中的缺陷，使晶粒長大，但是過高的退火溫度不利於zno薄膜的重結晶，使zno薄膜的質量變差。
  12. And then, we measured x - ray diffractive spectrum of samples and investigated the crystal lattice structure of samples treated under different annealing temperature and different implantation condition comparing the diffraction peaks

    然後，通過x射線衍射測量了樣品的衍射譜，通過比較不同樣品衍射峰的形狀，了解了不同退火溫度及注入條件下樣品的晶格結構情況。
  13. Recrystallization kinetics of the galvanized strip continuous annealing process with acceleration

    熱鍍鋅原板變速連續退火再結晶動力學
  14. The one deposited at 300 substrate temperature owns denser crystallites. during the annealing process, with the increasing of annealing temperature, the crystallites become bigger, and crystalline phase begins to transfer. when the annealing temperature gets to 800, tio2 transfers to rutile structure completely

    （ 2 ）常溫下制備的tio _ 2薄膜是無定型的， 300濺射薄膜表面有緻密的晶粒，熱處理溫度升高，晶粒變大，晶相開始轉化， 800退火tio _ 2完全轉化為金紅石結構。
  15. Quantum confinement effects of semiconductor nanocrystals cdsaiseo9 in glass abstract a series of cds0. iseo. 9 semiconductor nanocrystals embedded in silicate glass with different sizes have been fabricated by one - step and two - step annealing methods. the electronic state and optical properties of these nanocrystals also have been studied through room - temperature absorption spectra and electroabsorption spectra

    本文用一步退火和兩步退火方法在玻璃基體中生長了一系列不同尺寸的cds _ （ 0 . 1 ） se _ （ 0 . 9 ）半導體納米晶體。對制備的納晶樣品作了室溫吸收光譜和電調制吸收光譜的測量，以此研究了納晶的電子結構及光學性質。
  16. In order to eliminate the defects, especially te precipitates, cd1 - xznxte slices were annealed in cdzn vapor in the present researches. the variation of te - rich phases in morphology and sizes during the annealing and its effects on the optical and electrical properties of the crystals were examined in detail. the defect chemistry calculations were made

    本文的主要內容就是研究退火過程中cd _ （ 1 - x ） zn _ xte晶體內富te相的形態、大小的變化及其對晶體光、電性能的影響，並通過缺陷化學計算，結合實際的退火實驗，制定相應的退火工藝，改善晶體性能。
  17. The results showed that the microstructure of as - deposited tbdyfe ii 1ms were amorphous and the crystal of tbfe2 were found in films after annealing at 500. annealing films in vaccum could improve the saturation magnetization ms and the susceptibility, decrease the coercivity and the saturaion field, and make the direction of the magnetic moments parallel to the film plane

    結果表明，制備態薄膜為非晶態結構，經過500真空退火熱處理后，薄膜出現了tbfe _ 2的結晶物，薄膜的矯頑力和外場的飽和磁場大大降低，飽和磁化強度增強，初始磁化率提高，易磁化軸轉向膜面。
  18. X - ray diffraction results revealed that the structure of as - deposited smco film was amorphous and crystallization happened after the films annealed at 500 in vacuum. the magnetic tests of smco thin films showed that its coercivity reduced with the increase of film ' s thickness while the ratio of mr / ms was opposite. the films " coercivity and mr / ms declined after it annealed at 500 because the machanism of magnetization were changed from domain wall nailing into magnetic nuclear forming

    研究結果表明，由於雜質fe的摻入降低了smco薄膜的磁性能；制備態smco薄膜為非晶態結構，矯頑力hc隨著薄膜厚度的增加而減小，剩磁比mr ms隨膜厚增加而增加；經過500真空退火熱處理后，薄膜出現smcos的結晶物，矯頑力hc降低， mr ms減小，磁化機制由疇壁釘扎類模型轉為形核類模型。
  19. The effect of deposited condition, include substrate temperatures, different substrates and annealing on the structural properties of zno films has been studied in considerable detail. it is found that the optimal conditions to deposit zno are below : the substrate temperature of 450c, the substrate of sapphire. the sample on this condition is 0. 3491

    通過分析襯底溫度、不同襯底和退火對樣品結構的影響，得到了樣品的最佳制備條件：襯底溫度450 、藍寶石襯底，此條件下制備的樣品具有高度（ 002 ）取向性， （ 002 ）衍射峰半高寬僅僅0 . 3491 ，原子力顯微鏡（ afm ）分析表明zno薄膜具有密集堆積的均勻柱狀晶粒。
  20. At the s ame time, an exceptional structure has been found in the sample annealed for one hour at 800. it appears the single crystal lattice irradiated by high - energy electron beam within a few seconds and then becomes amorphous structure quickly

    同時在800退火1小時的薄膜中發現一種異常結構，在短時間高能電子束照射下呈現明晰的單晶衍射斑點，但時間一長，非晶化現象嚴重。
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