適度曝光 的英文怎麼說
中文拼音 [shìdùpùguāng]
適度曝光
英文
correct exposure- 適 : 形容詞1 (適合) fit; suitable; proper 2 (恰好) right; opportune 3 (舒服) comfortable; well Ⅱ...
- 度 : 度動詞[書面語] (推測; 估計) surmise; estimate
- 曝 : 動詞[書面語] (曬) expose to the sun
- 光 : Ⅰ名詞1 (照耀在物體上、使人能看見物體的一種物質) light; ray 2 (景物) scenery 3 (光彩; 榮譽) ...
- 適度 : appropriate; moderate; proper; appropriate measure; moderate degree
- 曝光 : exposure
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For underexposed pictures, set a large aperture ( smaller number aperture setting ) or slower shutter speed. for overexposed pictures, set a smaller aperture ( large number aperture setting ) or faster shutter speed
對于曝光不足的景物,可適當增加光圈(較小的光圈數)或選用較慢的快門速度。Optimum compatibility with all digital printers konica minolta color qa paper type ad is compatible with many different digital exposure methods and exposure ranges
"柯尼卡美能達彩色qa相紙ad型"廣泛適用於各種數碼曝光方式和曝光照度范圍。This thesis work has researched the fabrication technics of photonic crystal defect waveguide with air - bridge structure and collecting waveguide ; suggested using uv - lithography and wet etching to fabricate traditional waveguide, after that, using eb - lithography and dry etching to fabricate photonic crystal holes, so can reduce the fabrication cost by a big range ; designed the moulding board, which can fabricate the air - bridge structure and is convenient for recognizing position in eb - lithography ; the structure consisted of traditional waveguides and etching grooves are fabricated on soi successfully, then an successful eb - lithography is realized on the structure, the defect waveguide collected with the traditional waveguide quite well ; used the etching grooves to do the sacrificial layer etching experiment, which grounded etching sacrificial layer by photonic crystal holes in next step
提出採用紫外光刻工藝製作傳統波導結構之後,通過電子束曝光和干法刻蝕製作光子晶體小孔的工藝方案,大幅度減低了製作成本;設計出可形成空氣橋結構、並且適用於電子束曝光位置識別的光刻模板,在soi材料上成功製作出帶有空氣橋刻蝕預留槽以及接續光波導的結構,在該結構上成功實現了光子晶體帶隙波導的電子束曝光,帶隙波導與接續光波導位置接續良好;最後利用預留槽進行了刻蝕犧牲層的實驗,為下一步利用光子晶體小孔刻蝕犧牲層形成空氣橋結構打下了基礎。If the film has been properly loaded, the film speed appears on the lcd panel for about 2 seconds. then, the exposure counter displays “ 1 ”
如膠卷裝得合適,膠片的速度將在2秒鐘內顯示在液晶屏上,這時,曝光計數器顯示「 1 」 。Owing to the batch - fixing scheme, the exposure time for recording individual hologram is more uniform and the total exposure time is short than that by using single - fixing scheme
由於採用分批存儲熱固定技術,適當均化了所有全息圖的曝光時間並縮短了總曝光時間,從而可以降低噪聲強度並提高全息圖存儲容量。Aperture priority ( a - mode ) aperture selectable in 12 ev or 13 ev increments, shutter speed from 112000 to 30 sec. set by autoexposure program
光圈每次可作12ev或13ev增減;自動曝光程式會在112 , 000至30秒快門速度范圍內設定合適的快門速度分享友人