適量蝕刻 的英文怎麼說
中文拼音 [shìliángshíkè]
適量蝕刻
英文
just etching-
In early ic fabrication practice, etch bias was usually dealt with by introducing an appropriate amount of compensation in the masking layer.
在早期的集成電路製作實踐中，刻蝕偏差通常是通過在掩膜層上引入一個適量的修正來處理的。In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask
在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。In order to make integration of theory with practice, a lot of experiments have been done. mask - making technology, photoetching and wet - etching processes have been optimized. the author also presents the application and commercial value of silicon v - groove arrays
在實踐上，對製作工藝積極探索，提出新的制備硅掩蔽膜的工藝方案，對影響光刻質量的因素深入分析，試驗摸索出適用於v型槽的各向異性濕法腐蝕的腐蝕液配方，獨立優化設計了製作硅v型槽的相關工藝，製作出高質量的硅v型槽。By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier
實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。From the simulation of peb process, we prove that peb could reduce standing wave effects and improve resist development profile. after analyzing the effects of standing wave effects on resist profiles, we bring forward a certain thickness and these effects could be ignored when resist is beyond that value. finally, the characters of thick resist profile are analyzed, and experiment results are also given
同時，在論文中還深入討論了抗蝕劑折射率變化對光場計算帶來的誤差；模擬了后烘過程對駐波效應的改善作用，論證了採用適當的后烘工藝改善抗蝕劑光刻質量的作用；分析了駐波效應對厚層抗蝕劑顯影輪廓的影響，提出了一個可以忽略駐波效應影響的抗蝕劑厚度條件值；最後還模擬和分析了厚層抗蝕劑顯影輪廓特點並給出了實驗結果。分享友人