邊界襯度 的英文怎麼說

中文拼音 [biānjièchèndù]
邊界襯度 英文
border contrast
  • 邊 : 邊Ⅰ名詞1 （幾何圖形上夾成角的直線或圍成多邊形的線段） side; section 2 （邊緣） edge; margin; oute...
  • 界 : 名詞1 （相交的地方; 劃分的界限） boundary 2 （一定的范圍） scope; extent 3 （按職業、工作或性別等...
  • 襯 : Ⅰ動詞1 （在裏面托上一層） line; place sth underneath 2 （陪襯; 襯托） set off Ⅱ名詞（襯在裏面的附...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 邊界 : boundary; frontier; border; borderline; edge range line; periphery
  1. The crystal grain boundary of v2o5 films was melted and disappeared as increasing the deposition temperature, and the crystalline v2o5 films can be obtained by deposition at > 300. these films showed excellent cathode and anodic electrochromic performance at different wavelength region

    而襯底溫度升高促進薄膜晶體顆粒長大、熔結，晶粒邊界消失，在較高襯底溫度（ 300 400 ） ，得到連續的結晶性能良好的v _ 2o _ 5薄膜。
  2. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。
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