重空穴 的英文怎麼說

中文拼音 [zhòngkōngxué]
重空穴 英文
heavy hole
  • : 重Ⅰ名詞(重量; 分量) weight Ⅱ動詞(重視) lay [place put] stress on; place value upon; attach im...
  • : 空Ⅰ形容詞(不包含什麼; 裏面沒有東西或沒有內容; 不切實際的) empty; hollow; void Ⅱ名詞1 (天空) s...
  • : 名詞1 (巖洞; 窟窿) cave; cavern; grotto 2 (動物的窩) den; hole 3 (墓穴) grave4 [中醫] (穴...
  • 空穴 : [電子學] hole; electron hole; cavity; positive hole
  1. The rising temperature in the cave, the lamp - light ' s toasting and the convictive air made the humidity of the whole or part of the cave descend, which made the speleothem sightseeing dry, cracked and weathering. the acid air from the outer and the highly dense co2 would cause acid erode action to the speleothem sightseeing with water vapor. the existence of lamp - light offered a good chance for the lightloving plant to grow up, thus a lot of bryophyte covered the speleothem sightseeing

    升溫、燈光的烘烤及氣的對流致使洞濕度或局部濕度降低,使景觀產生乾裂、風化;氣流帶入的洞外酸性氣體及高濃度co _ 2在高濕的條件下,結合水汽對洞景觀產生酸侵蝕作用;燈光的存在為燈光植物生長提供了條件,使大量的苔蘚類植物生長于鐘乳類景觀的表面;洞外大氣粉塵的進入,給洞帶來了非常嚴的破壞,粉塵在洞內高濕的環境下大量沉降,附著于鐘乳類景觀的表面,致使受污染面發黑,毫無光澤。
  2. In ancient time, cave building is the initial way of human / mankind inhabitancy. today, underground space has been more and more significant, more and more major countries have pay more attention to this new form of nation ' s land resources

    遠古時期,洞建築是人類最早的居住形式,如今地下間作為新型國土資源越來越受到世界眾多國家的視,開發利用地下間已成為世界性發展趨勢。
  3. The negative photoconductivity effect was found in the dimixing phthalocyanine composites. the experiment results indicated that the negative photoconductivity effects were closely related with the partial charge transfer from the center metals to phthalocyanine rings, and the separation efficiency of photocarriers was a key factor to the photoconductivity

    結果表明,共混復合后,其光電導性能表現出負效應,並發現酞菁中心金屬與其相連的氮原子之間的部分電荷轉移是引起復合體系光電導性能變化的根本原因,同時復合體系中的電子對的分離效率是影響光電性能的一個要因素。
  4. Switzerland and luxembourg fear ? not without cause ? that giving up banking secrecy would hit their private - banking business

    瑞士和盧森堡的惶恐也不是來風,拋棄銀行保密義務將沉打擊他們的私人銀行業務。
  5. The problem of the microvoid is of considerable significance.

    微觀仍是極其要的問題。
  6. In the second layer, k - nearest neighbor algorithm is introduced to ascertain searching scope firstly, and then the nerve cell function ' s parameter in hidden layers begin to be evolved in this scope. the least - square is also introduced to calculate connection power between hidden layer and output layer

    其中在第二級演化中,先用最小鄰聚法確定搜索間,然後再在此廣西大學頎十論文i 13f神經網路在ect圖像注中的應用研間內進行演化,其中用最小二乘法來確定從隱層到輸出層的連接權值。
  7. It is indicated that the cavity modes blueshift with decreased radius, and on decreasing radii there is obvious anticross between the three polaritons resulted from interaction between cavity modes and its corresponding exciton modes

    結果表明隨著微腔半徑的減小腔模能量藍移,腔模與相應的重空穴激子模、輕激子模藕合形成的腔極化激元的三支隨著微腔半徑的減小存在明顯的反交叉行為。
  8. For the compressively strained layer, the heavy - hole state is moved to higher energy and the light - hole state to lower energy due to the shear - deformation potential

    計算結果表明,在壓應變力下,量子阱的重空穴帶上升,輕帶下降。第一重空穴在(
  9. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構,分析了sic中雜質的不完全離化現象以及sic中遷移率的擬和公式;用解一維poisson方程的方法分析了sicpmos間電荷區的電特性;本論文點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  10. But in the moderate electric field 150 kv / cm, there is a sharp change in the configuration and charge distribution of the exciton, i. e. the exciton is directly split into an electron polaron and a hole polaron. the polarization and dissociation happen at a same time, which differs from that in conjugated polymers. and in the strong electric field 350 kv / cm, appear structural phase transition of the chain and luminescence quenching

    同時得到兩個要的臨界電場值: 1激子解離電場ec1 ( 150kv / cm ) ,在此電場下激子發生瞬間解離,成為電子型極化子和型極化子; 2結構相變電場ec2 ( 350kv / cm ) ,在ec2下二聚化晶格開始被等距晶格取代, ptcl絡合物鏈發生結構相變,並伴隨peierls能隙漸趨消失和發光猝滅的現象出現。
  11. Standard test method for open - cell content of rigid cellular plastics by the air pycnometer

    氣比計測量硬質泡沫塑料的開孔氣含量的標準試驗方法
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